Patent application number | Description | Published |
20100134745 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display (LCD) includes a first substrate including a display area displaying images and a peripheral area surrounding the display area, a common pad formed in the peripheral area of the first substrate, an insulating layer formed on the common pad and having a common contact hole exposing the common pad, an assistance common pad formed on the insulating layer of the peripheral area and contacting the common pad through the common contact hole, a second substrate corresponding to the first substrate, and a common electrode formed on the second substrate, and a conductive sealant disposed between the assistance common pad and the common electrode of the peripheral area, the conductive sealant electrically connecting the assistance common pad and the common electrode, wherein the common contact hole is disposed between the conductive sealant and the display area. | 06-03-2010 |
20100317415 | BUILT-IN ANTENNA FOR FOLDER TYPE PORTABLE TERMINAL - A built-in antenna for a folder type portable terminal includes a main body including a main board, an openable folder rotated at a predetermined angle with respect to the main body, a metallic hinge module rotating the folder on the main body to provide an opening and closing feeling of the folder, a conductor electrically connected to the metallic hinge module, the conductor being disposed inside the folder, and at least one conductive connection unit electrically connected to a broadcasting signal line of the main board, the at least one conductive connection unit being electrically connected to the hinge module through a non-contact coupling. | 12-16-2010 |
20110037665 | MULTIBAND BUILT-IN ANTENNA FOR PORTABLE TERMINAL - A multiband built-in antenna of a portable terminal is provided. The multiband built-in antenna includes a main board having a ground area and a non-ground area on a front surface and an opposite surface, and an antenna radiator having a specific pattern directly formed on the non-ground area of the main board, wherein the antenna radiator comprises a first antenna radiator of which one end is branched off into two parts on the front surface of the main board so that one part is used for feeding and the other part is electrically connected to the ground area, and of which the other end is extended by a specific length in a widthwise direction of the terminal, and a second antenna radiator which protrudes towards the opposite surface of the main board from the other end of the first antenna radiator and is formed in a specific pattern in the non-ground area on the opposite surface of the main board. | 02-17-2011 |
20110108985 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises: etching a semiconductor substrate to form a plurality of pillar patterns; depositing an insulating layer on the surface of the pillar pattern; removing a portion of the insulating layer located at one side of the pillar pattern to form a contact hole that exposes the pillar pattern; forming a barrier film in the contact hole; and forming a junction in the pillar pattern that contacts with the contact hole. In the method, when a buried bit line is formed, a diffusion barrier is formed in the contact hole and a junction is formed in the lower portion of the pillar pattern, thereby improving characteristics of the device. | 05-12-2011 |
20110304028 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device which forms a barrier layer formed of a doped polysilicon layer on a buried bit line to prevent the bit line conductive layer from being exposed during the etching process for forming a buried word line, thereby improving characteristics of the device, and a method of manufacturing the same, are provided. The semiconductor device includes a first pillar pattern and a second pillar pattern, including sidewall contacts, and a buried bit line including a bit line conductive layer disposed over a lower part of a trench between the first pillar pattern and the second pillar pattern, and a barrier layer stacked over the bit line conductive layer. | 12-15-2011 |
20120025296 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns. | 02-02-2012 |
20120044425 | METHOD AND APPARATUS FOR MULTIPLEXING AND DEMULTIPLEXING DATA TRANSMITTED AND RECEIVED BY USING AUDIO/VIDEO INTERFACE - A method and apparatus for multiplexing a plurality of streams transmitted and received via an audio/video (AV) link by allocating to the plurality of streams a plurality of basic units included in a transmission unit, and generating and transmitting an additional plurality of transmission units. | 02-23-2012 |
20120047281 | METHOD AND APPARATUS FOR TRANSMITTING AND RECEIVING DATA BASED ON SECURED PATH BANDWIDTH IN NETWORK ESTABLISHED BY USING AUDIO/VIDEO INTERFACE - A method and apparatus for transmitting and receiving data. The method and apparatus previously determines a validity of a data transmission path for transmitting a stream from a source device to a sink device. The validity of the transmission path is verified by checking and securing the data transmission path, thereby executing a streaming service based on the validity. | 02-23-2012 |
20120102534 | METHOD AND DEVICE FOR TRANSMITTING AND RECEIVING VIDEO STREAM - A method and device for transmitting and receiving a video stream are provided. The transmitting method includes receiving auxiliary information and one or more video streams, and distributing them as one or more pieces of lane data; transmitting the lane data to a receiving device; and receiving a result value that indicates whether a video processing unit for processing one of the one or more video streams works normally. The receiving method includes receiving one or more pieces of lane data that include auxiliary information and one or more video streams; merging the lane data into one or more video streams; selecting a video processing unit based on the auxiliary information, where one or more video processing units process the video streams; generating a result value for the selected video processing unit that indicates whether the video processing unit works normally; and transmitting the result value to a transmitting device. | 04-26-2012 |
20120135586 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current. | 05-31-2012 |
20120300557 | SEMICONDUCTOR CELL AND SEMICONDUCTOR DEVICE - A technology is a semiconductor cell and a semiconductor device capable of reducing the coupling capacitance between adjacent bit lines by forming a bit line junction region in a separated island shape when forming a buried bit line, thereby improving characteristics of the semiconductor devices. The semiconductor cell includes a transistor including a gate and a gate junction region, a plurality of buried bit lines disposed to intersect the gate, and a plurality of bit line junction regions, each bit line junction region having an island shape formed between the buried bit lines and connected to the buried bit line. | 11-29-2012 |
20130105872 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | 05-02-2013 |
20130105875 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | 05-02-2013 |
20130241795 | ANTENNA APPARATUS FOR MOBILE TERMINAL - A mobile terminal with an antenna apparatus is provided. The mobile terminal in one embodiment includes an antenna radiator disposed at a first end of the mobile terminal; at least one antenna modifying element disposed at a second, opposing end of the mobile terminal; and a coupling unit for fastening the first and second ends and electrically connecting the at least one antenna modifying element with the antenna device when the first and second ends are fastened. In another embodiment, a deformation detector detects at least one deformation of the mobile terminal, an antenna matching unit is electrically connectable to the first antenna radiator; and a controller is coupled to the deformation detector, for controlling an electrical connection between the antenna matching unit and the first antenna radiator when the at least one deformation is detected. The antenna matching unit may include a second antenna radiator. | 09-19-2013 |
20130241798 | BUILT-IN ANTENNA FOR ELECTRONIC DEVICE - A built-in antenna for an electronic device is provided. The built-in antenna includes a substrate, a 1st antenna radiator with at least two radiating portions, a 2nd antenna radiator, and a switching means. The substrate has a conductive area and a non-conductive area. The 2nd antenna radiator is arranged within the non-conductive area of the substrate and fed by a Radio Frequency (RF) end of the substrate. The 2nd antenna radiator is configured to operate at a band different from at least one operating band of the 1st antenna radiator, and is fed by the RF end in a position adjacent the 1st antenna radiator. The switching means switches to selectively feed the 1st antenna radiator and the 2nd antenna radiator. | 09-19-2013 |
20140021537 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for forming the same includes a pillar formed over a semiconductor substrate, a buried bit line formed below the semiconductor substrate, a vertical gate formed over a sidewall of the pillar, an insulation film pattern formed to expose one side of the vertical gate disposed between the pillars, and a word line coupled to the exposed vertical gate. The vertical gate is formed to cover a portion of a sidewall of the pillar with a metal material, a word line overlaps with some parts of the vertical gate, and some parts of the pillar are shifted to be coupled to the vertical gate. | 01-23-2014 |
20140353745 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL - A vertical-channel semiconductor device includes an active pillar including a channel region, a gate located at a sidewall of the active pillar, a buried bit-line formed below the active pillar, and an insulation film formed below the buried bit-line. Some parts of the buried bit-line are replaced with an insulation film, such that a bit-line junction leakage is prevented. | 12-04-2014 |
20150041888 | SEMICONDUCTOR DEVICE INCLUDING BURIED BIT LINE, AND ELECTRONIC DEVICE USING THE SAME - A semiconductor device includes: an active region defined by a device isolation film, an upper portion of which is divided into a first active pillar and a second active pillar; a first gate formed to proceed between the first active pillar and the second active pillar so as to obliquely cross the active region, and formed to contact the first active pillar; a second gate formed to proceed between the first active pillar and the second active pillar so as to obliquely cross the active region, and formed to cross the second active pillar; a conductive line formed below the first gate and the second gate, and commonly coupled to the first pillar and the second pillar; and an insulation film formed to enclose the conductive line within the active region. | 02-12-2015 |