Patent application number | Description | Published |
20090250690 | ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - In an organic thin film transistor (TFT) substrate, the organic TFT substrate includes gate lines, data lines, a gate electrode, a source electrode, a drain electrode, a gate insulating layer, an organic semiconductor layer, and an organic protective layer. The gate and data lines are insulated from each other and cross each other to define pixel areas. The gate electrode is connected to the gate line. The source electrode is connected to the data line. The drain electrode faces the source electrode with the gate electrode disposed therebetween. The gate insulating layer covers the gate electrode and exposes a portion of the source and drain electrodes. The organic semiconductor layer contacts the source and drain electrodes. The organic protective layer is disposed on the organic semiconductor layer to protect the organic semiconductor layer. | 10-08-2009 |
20100038647 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor. | 02-18-2010 |
20100051911 | Organic Thin Film Transistor Array Panel and Method of Manufacturing the Same - In an organic thin film transistor array panel includes a source electrode and a drain electrode having a double layer including a metal and a metal oxide. The organic thin film transistor array panel is formed through a lift-off process or by using a shadow mask. The thin film transistor array panel has excellent characteristics and reduced manufacturing process costs. | 03-04-2010 |
20100084644 | DISPLAY SUBSTRATE METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer. | 04-08-2010 |
20100128190 | Liquid Crystal Display and Manufacturing Method of the Same - Disclosed is a liquid crystal display including a first substrate, a second substrate facing the first substrate, a thin film transistor formed on the first substrate and including a semiconductor layer, a convex pattern formed on the semiconductor layer and provided at a side surface thereof with a concave-convex section, and a liquid crystal layer interposed between the first and second substrates. | 05-27-2010 |
20100308326 | THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME - A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other. | 12-09-2010 |
20100311196 | THIN FILM TRANSISTOR HAVING OPENINGS FORMED THEREIN - A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor. | 12-09-2010 |
20110140094 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer | 06-16-2011 |
20110233536 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME - A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other. | 09-29-2011 |
20110254011 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer. | 10-20-2011 |
20120142126 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer. | 06-07-2012 |
20130140562 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer. | 06-06-2013 |
20140191228 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer. | 07-10-2014 |
20150069338 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A display panel includes a base substrate, on which a pixel area and a peripheral area are defined, a semiconductor pattern disposed on the base substrate, a display element disposed in the pixel area of the base substrate and a first thin film transistor configured to control the display element, where the first thin film transistor includes an input electrode a first portion of the semiconductor pattern and an output electrode disposed on a second portion of the semiconductor pattern, a third portion of the semiconductor pattern between the first portion and the second portion; and a control electrode disposed on the third portion and insulated from the third portion. | 03-12-2015 |