Patent application number | Description | Published |
20080247222 | Spin Transfer Torque Magnetoresistive Random Access Memory and Design Methods - Systems, circuits and methods for determining read and write voltages for a given word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that the read operations occur in the linear region of the word line transistor. | 10-09-2008 |
20090265678 | System and Method of Resistance Based Memory Circuit Parameter Adjustment - Systems and methods of resistance based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance based memory circuit includes selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further includes performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter. | 10-22-2009 |
20090323404 | Write Operation for Spin Transfer Torque Magnetoresistive Random Access Memory with Reduced Bit Cell Size - Systems, circuits and methods for controlling write operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A reduced bit cell size is achieved by arranging the source lines (SL) substantially in parallel with the word lines (WL) and substantially perpendicular to the bit lines (BL). Further, in one embodiment during a write operation, a high logic/voltage level is applied to the bit lines of unselected bit cells to prevent an invalid write operation. | 12-31-2009 |
20100321976 | Split Path Sensing Circuit - A sensing circuit is disclosed. The sensing circuit includes a first path including a first resistive memory device and a second path including a reference resistive memory device. The first path is coupled to a first split path including a first load transistor and to a second split path including a second load transistor. The second path is coupled to a third split path including a third load transistor and to a fourth split path including a fourth load transistor. | 12-23-2010 |
20100324850 | Static Noise Margin Estimation - In a particular embodiment, a method is disclosed that estimates a total static noise margin of a bit cell of a memory. The method includes determining a correlation coefficient of a left static noise margin of the bit cell as compared to a right static noise margin of the bit cell and estimating a total static noise margin of the bit cell by evaluating an analytical function based on the correlation coefficient. | 12-23-2010 |
20110221495 | DIGITAL DLL INCLUDING SKEWED GATE TYPE DUTY CORRECTION CIRCUIT AND DUTY CORRECTION METHOD THEREOF - Provided are a delay locked loop (DLL) that may can be included in a data processing device and may include a duty correction circuit, and a duty correction method of such a DLL. The duty correction method includes aligning a second transition of an output clock at a first transition of a clock for duty correction, sampling the clock for duty correction at the first transition of the output clock to detect an error of a duty cycle, and performing duty correction using a skewed gate chain according to the detected error of a duty cycle. | 09-15-2011 |
20110235406 | Low-Power 5T SRAM with Improved Stability and Reduced Bitcell Size - A 5 Transistor Static Random Access Memory (5T SRAM) is designed for reduced cell size and immunity to process variation. The 5T SRAM includes a storage element for storing data, wherein the storage element is coupled to a first voltage and a ground voltage. The storage element can include symmetrically sized cross-coupled inverters. A single access transistor controls read and write operations on the storage element. Control logic is configured to generate a value of the first voltage a write operation that is different from the value of the first voltage for a read operation. | 09-29-2011 |
20110267874 | Invalid Write Prevention for STT-MRAM Array - In a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) a bit cell array can have a source line substantially parallel to a word line. The source line can be substantially perpendicular to bit lines. A source line control unit includes a common source line driver and a source line selector configured to select individual ones of the source lines. The source line driver and source line selector can be coupled in multiplexed relation. A bit line control unit includes a common bit line driver and a bit line selector in multiplexed relation. The bit line control unit includes a positive channel metal oxide semiconductor (PMOS) element coupled between the common source line driver and bit line select lines and bit lines. | 11-03-2011 |
20120026783 | Latching Circuit - A non-volatile latch circuit includes a pair of cross-coupled inverters, a pair of resistance-based memory elements, and write circuitry configured to write data to the pair of resistance-based memory elements. The pair of resistance-based memory elements is isolated from the pair of cross-coupled inverters during a latching operation. A sensing circuit includes a first current path that includes a first resistance-based memory element and an output of the sensing circuit. The sensing circuit includes a second current path to reduce current flow through the first resistance-based memory element at a first operating point of the sensing circuit. The sensing circuit may also include an n-type metal-oxide-semiconductor (NMOS) transistor to provide a step down supply voltage to the first current path. | 02-02-2012 |
20120062294 | CLOCK DELAY CIRCUIT AND DELAY LOCKED LOOP INCLUDING THE SAME - A digital delay line includes a plurality of delay cells therein. The delay line is configured to delay a periodic signal received at a first input thereof by passing the periodic signal through a selected number of the plurality of delay cells, in response to a discontinuous thermometer code that encodes the selected number. A code converter is provided, which includes a group bit decoder, a shared bit decoder and a code output cell array, which are collectively configured to generate the discontinuous thermometer code in response to a binary control code. | 03-15-2012 |
20120189033 | TEMPERATURE SENSING CIRCUIT - A temperature sensing circuit includes a signal generation unit including a delay line and generating a source signal with a pulse width corresponding to a delay value of the delay line, a pulse width expansion unit configured to generate a comparison signal by expanding a pulse width of the source signal, and a change detection unit configured to sense a temperature change using a difference between the pulse widths of the comparison signal and a reference signal. | 07-26-2012 |
20120275212 | Self-Body Biasing Sensing Circuit for Resistance-Based Memories - A resistance based memory sensing circuit has reference current transistors feeding a reference node and a read current transistor feeding a sense node, each transistor has a substrate body at a regular substrate voltage during a stand-by mode and biased during a sensing mode at a body bias voltage lower than the regular substrate voltage. In one option the body bias voltage is determined by a reference voltage on the reference node. The substrate body at the regular substrate voltage causes the transistors to have a regular threshold voltage, and the substrate body at the body bias voltage causes the transistors to have a sense mode threshold voltage, lower than the regular threshold voltage. | 11-01-2012 |
20130002352 | SENSING CIRCUIT - A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of an operational amplifier. | 01-03-2013 |
20130003447 | SENSING CIRCUIT - A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of a not-AND (NAND) circuit. | 01-03-2013 |
20130120031 | FREQUENCY MULTIPLIER AND METHOD OF MULTIPLYING FREQUENCY - A frequency multiplier in accordance with some embodiments of the inventive concept may include a pulse generator receiving a differential clock signal from a delay locked loop having a plurality of delay cells to generate a pulse signal for generation of a multiplication clock signal. The pulse generator comprises an intermediate pulse signal generation unit receiving the differential clock signal to generate intermediate pulse signals; and an overlap correction unit correcting an overlap between the intermediate pulse signals to generate correction pulse signals. | 05-16-2013 |
20130194862 | NON-VOLATILE FLIP-FLOP - A flip-flop has an output control node and an isolation switch selectively couples a retention sense node to the output control node. A sense circuit selectively couples an external sense current source to the retention sense node and to magnetic tunneling junction (MTJ) elements. Optionally a write circuit selectively injects a write current through one MTJ element and then another MTJ element. Optionally, a write circuit injects a write current through a first MTJ element concurrently with injecting a write current through a second MTJ element. | 08-01-2013 |
20130215675 | INVALID WRITE PREVENTION FOR STT-MRAM ARRAY - In a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) a bit cell array can have a source line substantially parallel to a word line. The source line can be substantially perpendicular to bit lines. A source line control unit includes a common source line driver and a source line selector configured to select individual ones of the source lines. The source line driver and source line selector can be coupled in multiplexed relation. A bit line control unit includes a common bit line driver and a bit line selector in multiplexed relation. The bit line control unit includes a positive channel metal oxide semiconductor (PMOS) element coupled between the common source line driver and bit line select lines and bit lines. | 08-22-2013 |
20140036578 | SRAM READ PREFERRED BIT CELL WITH WRITE ASSIST CIRCUIT - Methods and apparatuses for static memory cells. A static memory cell may include a first pass gate transistor including a first back gate node and a second pass gate transistor including a second back gate node. The static memory cell may include a first pull down transistor including a third back gate node and a second pull down transistor including a fourth back gate node. The source node of the first pull down transistor, source node of the second pull down transistor, and first, second, third, and fourth back gate nodes are electrically coupled to each other to form a common node. | 02-06-2014 |
20140203854 | DELAY LOCKED LOOP AND METHOD OF GENERATING CLOCK - Provided is a delay locked loop (DLL) including a ring oscillator (RO) including a delay line to delay a reference clock signal and generate a delayed clock signal, wherein the RO circulates, through the delay line, a feedback clock signal corresponding to the delayed clock signal to synchronize N cycles of the feedback clock signal with a cycle of the reference clock signal (where N is an integer number equal to or larger than 2); and a first frequency divider dividing the frequency of the delayed clock signal by 1/N (where N is an integer number equal to or larger than 2) to generate an output clock signal. | 07-24-2014 |
20140204974 | TEMPERATURE SENSOR AND TEMPERATURE SENSING METHOD - Provided is a temperature sensing circuit and a temperature sensing method including a delay unit delaying an input clock signal to generate a feedback clock signal, and including logic gates of which delay times are variable according to temperature, a delay control unit comparing the feedback clock signal with a reference clock signal and controlling each of the logic gates of the delay unit according to the comparison result, and an input signal control unit selecting, as the input clock signal, any one of the feedback clock signal and the reference clock signal to input the input clock signal to the delay unit. | 07-24-2014 |
20150036417 | SRAM READ BUFFER WITH REDUCED SENSING DELAY AND IMPROVED SENSING MARGIN - A device includes a static random access memory (SRAM) cell and a read buffer coupled to an output of the SRAM cell. The read buffer includes an inverter and a switch. An input of the inverter is responsive to the output of the SRAM cell. A control terminal of the switch is responsive to an output of the inverter. | 02-05-2015 |
20150063012 | OFFSET CANCELING DUAL STAGE SENSING CIRCUIT - An offset canceling dual stage sensing method includes sensing a data value of a resistive memory data cell using a first load PMOS gate voltage generated by a reference value of a resistive memory reference cell in a first stage operation. The method also includes sensing the reference value of the resistive memory reference cell using a second load PMOS gate voltage generated by the data value of the resistive memory data cell in a second stage operation of the resistive memory sensing circuit. By adjusting the operating point of the reference cell sensing, an offset canceling dual stage sensing circuit increases the sense margin significantly compared to that of a conventional sensing circuit. | 03-05-2015 |