Patent application number | Description | Published |
20100097594 | APPARATUS FOR FABRICATING AND OPTICALLY DETECTING BIOCHIP - An apparatus for fabricating a biochip is provided. The apparatus includes a reaction chamber which encapsulates the biochip to be sealed form an external environment. The apparatus further includes an exposure system which has a light source and a spatial light modulator. The spatial light modulator receives light from the light source and forms an optical image utilizing the light. The optical image is received by the biochip. The apparatus further includes a detection system which detects light proceeding form the biochip. | 04-22-2010 |
20100099583 | OPTICAL DETECTING APPARATUS FOR A BIO-CHIP - An optical detecting apparatus for a bio-chip, the optical detecting apparatus including: a light source system for illuminating a bio-chip with an excitation light; a fluorescent light detecting system for detecting a fluorescent light emitted by the bio-chip; and a light path altering unit for directing the excitation light emitted by the light source system to a bio-chip and directing the fluorescent light emitted by the bio-chip to the fluorescent light detecting system, wherein a cross-sectional area of the excitation light irradiated by the light source system onto the bio-chip is greater than an area of the bio-chip, and the fluorescent light detecting system detects a fluorescent image of the entire bio-chip with a single illumination of excitation light. | 04-22-2010 |
20100108865 | SUBSTRATE FOR DETECTING SAMPLES, BIO-CHIP EMPLOYING THE SUBSTRATE, METHOD OF FABRICATING THE SUBSTRATE FOR DETECTING SAMPLES, AND APPARATUS FOR DETECTING BIO-MATERIAL - A substrate for detecting samples includes; a body, and a plurality of micro lenses arranged on the body and configured for attachment to at least one sample, wherein the at least one sample emits fluorescent light, and wherein the plurality of micro lenses condense the fluorescent light emitted from the at least one sample via refraction. | 05-06-2010 |
20100111762 | INTEGRATED BIO-CHIP, METHOD OF FABRICATING THE INTEGRATED BIO-CHIP, AND APPARATUS FOR DETECTING BIO-MATERIAL - An integrated bio-chip includes a substrate and one or more excitation light absorbing waveguides disposed in the substrate. The substrate includes one or more reaction regions on which samples are disposed. An end portion of each of the one or more excitation light absorbing waveguides is exposed from the substrate at an upper surface thereof, another end portion of each of the one or more excitation light absorbing waveguides is exposed from the substrate at a lower surface thereof, and the one or more reaction regions are disposed at a upper surface of the substrate. The one or more excitation light absorbing waveguides absorbs excitation light incident to the samples, and transmits fluorescent light emitted from the samples. | 05-06-2010 |
20100112342 | SUBSTRATE FOR BIOCHIP AND METHOD OF MANUFACTURING THE SUBSTRATE - A substrate for a biochip and a method of manufacturing the substrate. The substrate for a biochip having nanostructured spots formed on a base to which probe biomolecules are attached are, improving the binding efficiency between the substrate and the spots, and improving the efficiency in the detection of the biomolecules as well. | 05-06-2010 |
20100204064 | INTEGRATED BIO-CHIP AND METHOD OF FABRICATING THE INTEGRATED BIO-CHIP - An integrated bio-chip includes; a sample detection portion including at least one light receiving device which detects fluorescent light emitted from at least one sample, a light transfer portion disposed on a light incident surface of the sample detection portion, and which includes at least one excitation light absorbing waveguide which absorbs an excitation light and transmits the fluorescent light emitted from the at least one sample, and a sample reaction portion disposed adjacent to an incident end of the at least one excitation light absorbing waveguide, and including at least one reaction region on which the at least one sample is attached, wherein the sample detection portion, the light transfer portion, and the sample reaction portion are integrally coupled to each other as a single component. | 08-12-2010 |
20100210475 | MICROARRAY HAVING BRIGHT FIDUCIAL MARK AND METHOD OF OBTAINING OPTICAL DATA FROM THE MIRCOARRAY - A substrate includes; a fiducial mark disposed on the substrate, an area on the substrate on which a probe material is configured to be immobilized, the area being separated from the fiducial mark, and a probe immobilization compound disposed on the area on the substrate on which the probe material is configured to be immobilized, wherein the fiducial mark has a structure which reflects irradiated light at a greater intensity than an intensity of reflected irradiated light form the area on the substrate not corresponding to the fiducial mark. | 08-19-2010 |
20110081098 | METHOD OF CORRECTING DISTORTION OF SCANNED IMAGE - A method of correcting distortion of a scanned image, the method including; providing a reference chip wherein positions of a plurality of spots and a gap region between the plurality of spots are defined, scanning the reference chip to obtaining a scanned image of the reference chip by scanning the reference chip, measuring distortion in the scanned image of the reference chip, preparing a biochip where a second plurality of spots are arrayed in a complementary form to the distortion and obtaining a scanned image of the biochip. | 04-07-2011 |
20120145549 | NANOSENSOR AND METHOD OF MANUFACTURING THE SAME - A nanosensor includes a substrate including a hole which extends through the substrate, a thin layer on the substrate and including a nanopore which is connected to the hole, and a first graphene layer and a second graphene layer which are on the thin layer and spaced apart from each other centering the nanopore therebetween. A method of manufacturing the nanosensor includes forming a nanopore in a thin layer on a substrate, and forming a first graphene layer and a second graphene layer on the thin layer. The first graphene layer and the second graphene layer are spaced apart from each other centering the nanopore therebetween. | 06-14-2012 |
20120146162 | NANOSENSOR AND METHOD OF MANUFACTURING THE SAME - A nanosensor comprising a substrate in which an opening defining a hole is formed; a first layer disposed on the substrate, which comprises a first nanopore in communication with the hole in the substrate; and a second layer contacted or coupled with the first layer and formed of a porous material. | 06-14-2012 |
20120194811 | NANO PARTICLE TRACKING DEVICE, CHANNEL STRUCTURE OF THE NANO PARTICLE TRACKING DEVICE, AND METHOD OF FABRICATING THE CHANNEL STRUCTURE OF THE NANO PARTICLE TRACKING DEVICE - A nano particle tracking device includes a channel structure. The channel structure of the nano particle tracking device includes a pair of microchannels in which a specimen including nano particles is accommodated and which face each other, at least one nano channel which is between the pair of microchannels, which connects the pair of microchannels to each other and through which the nano particles in the specimen are moved, and a nano grating below the nano channel and crossing the nano channel perpendicularly. | 08-02-2012 |
20120325664 | NANOSENSOR AND METHOD OF MANUFACTURING THE SAME - A nanosensor comprising a substrate having a hole; a first insulating layer disposed on the substrate and having a first nanopore at a location corresponding to the hole in the substrate; first and second electrodes disposed on the first insulating layer, wherein the first and second electrodes are spaced apart from each other with the first nanopore positioned therebetween; a first electrode pad disposed on at least a portion of the first electrode; a second electrode pad disposed on at least a portion of the second electrode; and a protective layer disposed on at least a portion of the first and second electrode pads; as well as a method for manufacturing same. | 12-27-2012 |
20120326732 | NANOSENSOR AND METHOD OF DETECTING TARGET MOLECULE BY USING THE SAME - The present disclosure includes a sensor and method for detecting a target molecule. In one instance, a sensor comprises a substrate including a hole, a first insulating layer located on the substrate and including a first nanopore corresponding to the hole, a first electrode, a second electrode, wherein the first electrode and the second electrode are located on a surface of the first insulating layer and are spaced apart by the first nanopore forming a nanogap, and a modulation unit configured to apply a unit input signal between the first electrode and the second electrode, wherein at least one unit input signal is applied as a target molecule passes through the nanogap. | 12-27-2012 |
20130037907 | OPTOELECTRONIC INTEGRATED CIRCUIT SUBSTRATE AND METHOD OF FABRICATING THE SAME - An optoelectronic integrated circuit substrate may include a first region and a second region. The first region and the second region each include at least two buried insulation layers having different thicknesses. The at least two buried insulation layers of the first region are formed at a greater depth and have a greater thickness as compared to the at least two buried insulation layers of the second region. A micro-electromechanical systems (MEMS) structure may be formed in a third region that does not include a buried insulation layer. | 02-14-2013 |
20130101247 | OPTICAL MODULATOR INCLUDING GRAPHENE - An optical modulator includes a first graphene and a second graphene on an upper surface of a semiconductor layer, a first electrode on the first graphene, and a second electrode on the second graphene. Respective side surfaces of the first graphene and the second graphene are separated from each other. A first ridge portion of the semiconductor layer and a second ridge portion on the second graphene constitute an optical waveguide, and the first and second graphenes are on a center portion of the optical waveguide in a vertical direction to the semiconductor. | 04-25-2013 |
20130161192 | APPARATUS AND METHOD FOR LINEARLY TRANSLOCATING NUCLEIC ACID MOLECULE THROUGH AN APERTURE - An apparatus and method for linearly translocating nucleic acid molecules through an aperture at a reduced rate. | 06-27-2013 |
20130163919 | OPTOELECTRONIC CHIPS INCLUDING COUPLER REGION AND METHODS OF MANUFACTURING THE SAME - An optoelectronic chip, and/or a method of manufacturing the same, include a substrate; a coupler region surrounded by the substrate. The coupler region includes a total reflection surface. The total reflection surface is configured to totally reflect a first light incident through a surface of the substrate such that the reflected first light travels within the substrate, or the total reflection surface is configured to totally reflect a second light guided in the substrate and incident on the total reflecting surface such that the reflected second light travels through the surface of the substrate. | 06-27-2013 |
20130188257 | MICRO LENS, DEVICE EMPLOYING THE SAME, AND METHOD OF MANUFACTURING THE SAME - Example embodiments relate to a micro lens and a method of manufacturing the micro lens. The micro lens may include a substrate and an internal lens region existing in the substrate. The internal lens region may have a refractive index that is different from a refractive index of the substrate. The internal lens region may include at least one boundary contacting the substrate and formed as a curve. As a result, light incident in the substrate through a surface of the substrate is converged or diverged by the curve. | 07-25-2013 |
20130265031 | NANOGAP SENSOR AND METHOD OF MANUFACTURING THE SAME - A nanogap sensor includes a first layer in which a micropore is formed; a graphene sheet disposed on the first layer and including a nanoelectrode region in which a nanogap is formed, the nanogap aligned with the micropore; a first electrode formed on the grapheme sheet; and a second electrode formed on the graphene sheet, wherein the first electrode and the second electrode are connected to respective ends of the nanoelectrode region. | 10-10-2013 |
20140140658 | MULTICHIP PACKAGE HAVING OPTICAL INTERCONNECTION - A multichip package that includes a first optoelectronic chip including, a first substrate having a first surface; a first optical device disposed on the first surface; a first waveguide transmitting light from the first optical device in a direction parallel to the first surface; and a first mirror reflecting light from the first waveguide in an upward direction; and a second optoelectronic chip stacked on the first optoelectronic chip including, a second substrate having a second surface facing the first surface; a second mirror disposed on the second surface, the second mirror facing the first mirror to optically interconnect to the first optoelectronic chip, the second mirror reflecting light received from the first mirror in a direction parallel to the second surface, a second waveguide transmitting light received by the second mirror, and a second optical device to which light from the second waveguide is incident. | 05-22-2014 |
20140141546 | METHOD OF FABRICATING OPTOELECTRONIC INTEGRATED CIRCUIT SUBSTRATE - A method of fabricating an optoelectronic integrated circuit substrate includes defining a photonic device region on a first substrate, the photonic device region having a photonic device formed thereon, forming a trench in the photonic device region on a top surface of the first substrate, the trench having a first depth, filling the trench with a dielectric, bonding a second substrate on the first substrate to cover the trench, and thinning the second substrate to a first thickness. | 05-22-2014 |
20140202866 | NANOSENSOR AND METHOD OF MANUFACTURING SAME - A nanosensor may include a substrate that has a hole formed therein, a first insulating layer that is disposed on the substrate and has a nanopore formed therein, first and second electrodes that are disposed on the first insulating layer and are spaced apart from each other, first and second electrode pads that are disposed on the first and second electrodes, respectively, and a protective layer disposed on the first and second electrode pads. A method of manufacturing a nanosensor may include forming a first insulating layer, graphene, and a metal layer on a substrate, patterning the metal layer and the graphene, forming a protective layer on a portion of the graphene and the metal layer, exposing a portion of the graphene by removing a portion of the protective layer, forming a hole in the substrate, and forming a nanopore in the first insulating layer and the graphene to be connected to the hole. | 07-24-2014 |
20140212104 | ATHERMAL WAVEGUIDE AND METHOD OF MANUFACTURING THE SAME - Provided are an athermal waveguide and a method of manufacturing the same. The athermal waveguide includes: a substrate having a protruded region; a first material layer formed on the protruded region to counteract thermal expansion; and a second material layer formed on the first material layer a position corresponding to the protruded region and formed of a same base material as the protruded region. | 07-31-2014 |
20140217606 | THREE-DIMENSIONAL MONOLITHIC ELECTRONIC-PHOTONIC INTEGRATED CIRCUIT - A three-dimensional monolithic electronic-photonic integrated circuit and a method of manufacturing the same. The electronic-photonic integrated circuit may include a photonic element formed in a sealed space of a substrate and an electronic element formed on the substrate. The substrate may include a first substrate and a second substrate that are bonded to each other. The first substrate having a first trench corresponding to the sealed space formed therein, a first surface of the second substrate having the photonic element formed thereon, and the sealed space defined by a space formed inside the first trench that is sealed by the first surface of the second substrate. | 08-07-2014 |
20140307300 | ATHERMAL OPTICAL MODULATOR AND METHOD OF MANUFACTURING THE SAME - An athermal optical modulator includes a waveguide, a ring resonator configured to receive light input from the waveguide and output modulated light to the waveguide, the ring resonator including a ridge unit located at a center of the ring resonator in a vertical section, a first contact connected to one side of the ridge unit and a second contact connected to the other side of the ridge unit, the first contact and the second contact forming paths for applying electricity to the ring resonator to form an electric field in the ring resonator, and a polymer layer covering the ridge unit. | 10-16-2014 |
20150028278 | NONVOLATILE MEMORY TRANSISTOR AND DEVICE INCLUDING THE SAME - Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic. | 01-29-2015 |
20150028458 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer. | 01-29-2015 |
20150060990 | TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS - Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer. | 03-05-2015 |
20150061030 | SEMICONDUCTOR STRUCTURE INCLUDING METAL SILICIDE BUFFER LAYERS AND METHODS OF FABRICATING THE SAME - Provided are semiconductor structures and methods of fabricating the same. The semiconductor structure includes a silicon substrate, at least one semiconductor layer that is grown on the silicon substrate and has a lattice constant in a range from about 1.03 to about 1.09 times greater than that of the silicon substrate, and a buffer layer that is disposed between the silicon substrate and the semiconductor layer and includes a metal silicide compound for lattice matching with the semiconductor layer. Related fabrication methods are also discussed. | 03-05-2015 |
20150061088 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer. | 03-05-2015 |
20150069517 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer. | 03-12-2015 |