Patent application number | Description | Published |
20100009508 | Methods of fabricating stack type capacitors of semiconductor devices - Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition. | 01-14-2010 |
20100240191 | METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING A CAPACITOR - A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer. | 09-23-2010 |
20110124176 | METHODS OF FORMING A CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and the seed stopper to expose the plug. A seed is formed on an innerwall of the opening. A lower electrode is formed covering the seed on the innerwall of the opening. The sacrificial layer and the seed are removed. A dielectric layer and an upper electrode are sequentially formed on the lower electrode. | 05-26-2011 |
20110222207 | Methods of forming a dielectric layer structure, and methods of manufacturing a capacitor using the same - In a method of forming a dielectric layer structure, a precursor thin film chemisorbed on a substrate in a process chamber is formed using a source gas including a metal precursor. The process chamber is purged and pumped out to remove a remaining source gas therein and to remove any metal precursor physisorbed on the precursor thin film. The forming of the precursor thin film and the purging and pumping out of the process chamber are alternately and repeatedly performed to form a multi-layer precursor thin film. An oxidant is provided onto the multilayer precursor thin film to form a bulk oxide layer. | 09-15-2011 |
20110284968 | SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate having a top surface and a recessed portion including at least two oblique side surfaces and a first bottom surface therebetween, a gate insulating layer formed on the recessed portion, a gate electrode formed on the gate insulating layer, a channel region below the gate electrode in the semiconductor substrate, and gate spacers formed on side surfaces of the gate electrode, wherein both the bottom surface and the side surfaces of the recessed portion include flat surfaces. A method of manufacturing a semiconductor device comprising the steps of forming a recess portion including at least two oblique side surfaces and a bottom surface therebetween in a semiconductor substrate, forming a gate insulating layer formed on the recessed portion, forming a gate electrode formed on the gate insulating layer, forming a channel region below the gate electrode in the semiconductor substrate, and forming gate spacers formed on side surfaces of the gate electrode. | 11-24-2011 |
20120082367 | METHOD OF FORMING IMAGE OF SEMICONDUCTOR DEVICE, AND METHOD OF DETECTING A DEFECT OF THE SEMICONDUCTOR DEVICE BY USING THE IMAGE FORMING METHOD - A method forms an ultimate or final image of a sample by selecting some of a plurality of image frames and integrating the selected frames. The method includes providing a semiconductor device including a region of interest and a peripheral region; obtaining a plurality of image frames each including a region of interest image and a peripheral region image respectively corresponding to the region of interest and the peripheral region; selecting at least some of the plurality of image frames based on a contrast between the region of interest image and the peripheral region image; and obtaining an image of the semiconductor device by integrating the selected image frames. | 04-05-2012 |
20140231958 | CAPACITORS HAVING DIELECTRIC LAYERS WITH DIFFERENT BAND GAPS AND SEMICONDUCTOR DEVICES USING THE SAME - A capacitor of a memory device includes dielectric layers with different energy band gaps. The capacitor may include, for example, a first electrode and a first dielectric layer on the first electrode. The capacitor may further include a second dielectric layer on the first dielectric layer. The first and second dielectric layers may include the same dielectric material with different concentration of an impurity therein. A second electrode is disposed on the second dielectric layer. | 08-21-2014 |
20140264778 | PRECURSOR COMPOSITION FOR DEPOSITION OF SILICON DIOXIDE FILM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): | 09-18-2014 |
20150060862 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line. | 03-05-2015 |