Patent application number | Description | Published |
20090120903 | Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method - A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out. | 05-14-2009 |
20090233240 | Method of fabricating Triode-Structure field-emission device - Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole. | 09-17-2009 |
20100095497 | MONOLITHIC DUPLEXER - A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter. | 04-22-2010 |
20100290101 | LIGHT SCREENING DEVICE AND MANUFACTURING METHOD THEREOF - There are provided a light screening apparatus and a manufacturing method thereof. The light screening apparatus includes a substrate, a transparent electrode, a plurality of roll-up actuators and a plurality of light screening patterns. The substrate includes a light-transmitting region and the transparent electrode is formed on one surface of the substrate. Each roll-up actuator, which has opaque characteristics, is fixed on the circumference portion of the light-transmitting region and includes a fixing end and a moving part which extends from the fixing end. Gaps are formed between adjacent roll-up actuators, and the light screening patterns are formed on the substrate at locations corresponding to the gaps. The light-screening patterns prevent light incident through the gaps from being transmitted to the light-transmitting region. | 11-18-2010 |
20110156830 | Microelectromechanical system device and method of manufacturing the microelectromechanical system device - Provided is a microelectromechanical system (MEMS) that includes a first structure and second structure. The first structure and second structure may each include a first substrate and a second substrate. The first substrate of each structure may have first and second surfaces that face each other. The first substrate may include a via etching hole pattern penetrating the first surface and the second surface and a first non-via etching hole pattern penetrating the first surface. The second substrate of each structure may have third and fourth surfaces that face each other. The second substrate may include a second non-via etching hole pattern penetrating the third surface in a position corresponding to the via etching hole pattern of the first substrate. In the microelectromechanical system (MEMS) the second surface of the first substrate and the third surface of the second substrate may be bonded together. | 06-30-2011 |
20110170158 | OPTICAL SHUTTERING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an optical shuttering device and a method of manufacturing the same. Device includes a roll-up blade that stays in a rolled-up state while no driving voltage is applied thereto and flattens to shutter a light-transmitting region when a predetermined driving voltage is applied to the roll-up blade. The roll-up blade may be provided as a single roll-up blade or as a plurality of roll-up blades such that the roll-up blade(s) shutters a a portion or the entirety of the light-transmitting region. The roll-up blade may be formed as a thin layer made of a single opaque, conductive material. As a single-layered structure, the roll-up blade may spontaneously roll up due to a stress gradient that is made in a thickness direction of the roll-up blade, and as a multi-layered structure, the roll-up blade may spontaneously roll up due to differences in mean stress of the multi layers. | 07-14-2011 |
20130051179 | ELECTRO-ACOUSTIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME - Electro-acoustic transducers and methods of manufacturing the electro-acoustic transducer are provided. An electro-acoustic transducer includes: a first wafer including a first substrate in which a plurality of electro-acoustic transducer cells are formed; and a second wafer disposed in a lower portion of the first wafer, and including a second substrate in which a plurality of through wafer vias are formed. A method of manufacturing an electro-acoustic transducer includes: forming a plurality of electro-acoustic transducer cells in a first substrate of a first wafer; forming a plurality of through wafer vias in a second substrate of a second wafer; and bonding the first and second wafers to each other. | 02-28-2013 |
20130069731 | METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD - A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface. | 03-21-2013 |
20130169110 | ULTRASONIC TRANSDUCER STRUCTURE, ULTRASONIC TRANSDUCER, AND METHOD OF MANUFACTURING ULTRASONIC TRANSDUCER - An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer. | 07-04-2013 |
20140061826 | ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME - An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a first electrode layer which is disposed to cover a conductive substrate and an inner wall and a top of a via hole penetrating a membrane and has a top surface at a same height as a top surface of the membrane; a second electrode layer which is disposed on a bottom surface of the conductive substrate to be spaced apart from the first electrode layer; and a top electrode which is disposed on the top surface of the membrane and which contacts the top surface of the first electrode layer. | 03-06-2014 |
20140145275 | ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME - An ultrasonic transducer and a method of manufacturing the same are disclosed. The ultrasonic transducer includes a conductive substrate, a projection which is disposed on the conductive substrate and which forms a cavity therein, a via hole which penetrates the projection and conductive substrate, a first electrode which includes a metal and which fills the via hole, a second electrode which is provided on a bottom of the conductive substrate, a membrane which is provided on the projection and which covers the cavity, and an upper electrode which is provided on the membrane and which contacts the first electrode. | 05-29-2014 |
20150054095 | CAPACITIVE MICRO-MACHINED ULTRASONIC TRANSDUCER AND METHOD OF SINGULATING THE SAME - A capacitive micro-machined ultrasonic transducer (CMUT) and a method of singulating the same. Singulating CMUTs may include forming first trenches in regions of a device wafer defining a plurality of ultrasonic transducer structures, the device wafer including a plurality of the ultrasonic transducer structures, forming an ultrasonic transducer wafer having a plurality of ultrasonic transducers by bonding an electrode pad wafer supplying electricity to the plurality of ultrasonic transducers and the device wafer, and dicing the ultrasonic transducer wafer to form the plurality of ultrasonic transducers by cutting the plurality of ultrasonic transducer structures on the first trench and the electrode pad wafer below the first trench. | 02-26-2015 |