Patent application number | Description | Published |
20130043480 | Exposure Device, Exposure Method and Method of Manufacturing Semiconductor Device - The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method. | 02-21-2013 |
20130056764 | Display Device and Manufacturing Method Thereof - A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element. | 03-07-2013 |
20130069037 | Light-Emitting Element, Light-Emitting Device and Electronic Device - The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier transporting property of the first organic compound, and the second organic compound is dispersed in the first organic compound. The layer for controlling movement of carriers is provided in such a manner, whereby change in carrier balance with time can be suppressed. Therefore, a light-emitting element having a long lifetime can be obtained. | 03-21-2013 |
20130070174 | Liquid Crystal Display Device and Driving Method Thereof - To provide a hold-type display device without a problem of motion blur and a driving method thereof. The length of a period for displaying a blanking image in one frame period is controlled in accordance with a control parameter showing the degree of motion blur, and the level of a signal supplied to a display element is changed in accordance with the length of the period for displaying the blanking image. Accordingly, the hold-type display device without a problem of motion blur and the driving method thereof can be provided. | 03-21-2013 |
20130074763 | Film Formation Apparatus, Film Formation Method, Manufacturing Apparatus, and Method for Manufacturing Light-Emitting Device - An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat. | 03-28-2013 |
20130075713 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention. | 03-28-2013 |
20130076237 | Aromatic Amine Compound, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Using the Aromatic Amine Compound - Novel aromatic amine compounds are provided. Light-emitting elements having high emission efficiency and high reliability are provided. Further, light-emitting devices and electronic devices using the light-emitting devices are provided. Specifically, an aromatic amine compound represented by the general formula (1), and light-emitting elements, light-emitting devices and electronic devices that are formed using the aromatic amine compound represented by the general formula (1) are provided. By using the aromatic amine compound represented by the general formula (1) for light-emitting elements, light-emitting devices and electronic devices, the light-emitting elements, light-emitting devices and electronic devices can have high emission efficiency. | 03-28-2013 |
20130079516 | Organometallic Complex, and Light-Emitting Element, Light-Emitting Device and Electronic Device Using the Organometallic Complex - According to the present invention, a wider variation of organometallic complexes that can emit phosphorescence can be provided by applying, as a ligand, an organic compound from which a variety of derivatives can be easily synthesized. In particular, an organometallic complex having a sharp emission spectrum is provided. Further, an organometallic complex having high emission efficiency is provided. An organometallic complex represented by the general formula (G1) is provided. In the formula, Ar represents an aryl group, R represents an alkoxy group having 1 to 4 carbon atoms, and R | 03-28-2013 |
20130087796 | Light-Emitting Device and Electric Appliance - An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel portion and the driver circuit are formed by n-channel semiconductor elements, thereby enabling the manufacturing process to be simplified. Each of light-emitting elements provided in the pixel portion emits light in such a direction that most of the light travels away from the insulating member, so that substantially the whole of the pixel-forming segment electrode (corresponding to a cathode of an EL element) is formed as an effective light-emitting area. Therefore, a low-priced light-emitting device capable of displaying a bright image can be obtained. | 04-11-2013 |
20130088144 | Phosphorescent Iridium Metal Complex, Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - Provided is a light-emitting element including a phosphorescent iridium metal complex that emits phosphorescence in a yellow green to orange wavelength range, and has high emission efficiency and reliability. Thus, further provided is the phosphorescent iridium metal complex that emits phosphorescence in the yellow green to orange wavelength range. Further provided are a light-emitting device, an electronic appliance, and a lighting device each of which includes the above light-emitting element. The light-emitting element includes an EL layer between a pair of electrodes, and the EL layer contains a phosphorescent iridium metal complex where nitrogen at the 3-position of a pyrimidine ring having an aryl group bonded to the 4-position is coordinated to a metal, a substituent having a carbazole skeleton is bonded to the 6-position of the pyrimidine ring, and the aryl group bonded to the 4-position of the pyrimidine ring is ortho-metalated by being bonded to the metal. | 04-11-2013 |
20130092911 | Light-Emitting Device - A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) ( | 04-18-2013 |
20130092919 | Light Emitting Device and Method for Manufacturing the Same - When attaching a substrate with an EL element formed thereon and a transparent sealing substrate, the periphery of a pixel portion is surrounded with a first sealing agent that maintains a gap between the two pieces of substrates, an entire surface of the pixel portion is covered with a second transparent sealing agent so that the two pieces of substrate is fixed with the first sealing agent and the second sealing agent. Consequently, the EL element can be encapsulated by curing the first sealing agent and the second sealing agent without enclosing a drying agent and doing damage to the EL element due to UV irradiation even when a sealing device only having a function of UV irradiation is used. | 04-18-2013 |
20130095582 | Method for Manufacturing Sealed Structure - A method for manufacturing a sealed structure in which few cracks are generated is provided. Scan with the laser beam is performed so that there is no difference in an irradiation period between the middle portion and the perimeter portion of the glass layer and so that the scanning direction is substantially parallel to the direction in which solidification of the glass layer after melting proceeds. More specifically, in a region where the beam spot is overlapped with the glass layer, scan is performed with a laser beam having a beam spot shape whose width in a scanning direction is substantially uniform. Further, as a laser beam with which the glass layer is irradiated, a laser beam (a linear laser beam) having a linear beam spot shape with a major axis and a minor axis which is orthogonal to the major axis. | 04-18-2013 |
20130101754 | Method of Heating Dispersion Composition and Method of Forming Glass Pattern - Provided are a method of heating a composition which is applicable to a substrate provided with a material having low heat resistance and a method of forming a glass pattern which leads to reduction of cracks. A composition formed over a substrate is irradiated with a laser beam to bake the paste through local heating. Scan with the laser beam is, performed so that there can be no difference in the laser beam irradiation period between the middle portion and the perimeter portion of the composition. Specifically, irradiation with the laser beam is performed so that the width of the beam spot overlapping with the composition in the scanning direction is substantially uniform. | 04-25-2013 |
20130112954 | Dibenzo[f,h]Quinoxaline Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel compound which can be used as a material for a light-emitting element is provided. Specifically, a novel compound is provided which can be suitably used as a material for a light-emitting element where a phosphorescent compound enabling high emission efficiency of the light-emitting element is used as a light-emitting substance. In addition, a novel compound is provided which can be easily synthesized and inexpensively manufactured as well as having the above-described characteristics. A compound is provided in which at least one dibenzothiophenyl group or dibenzofuranyl group is directly bonded to a dibenzo[f,h]quinoxaline skeleton. | 05-09-2013 |
20130112955 | Light-Emitting Module and Light-Emitting Device - Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate, a conductive spacer maintaining the gap between the first substrate and the second substrate, and a space in which the light-emitting element is sealed between the first substrate and the second substrate. Further, the pressure in the space is lower than or equal to the atmospheric pressure. Furthermore, the conductive spacer is electrically connected to the second electrode in a position overlapping with a partition provided over the first substrate so as to reduce a voltage drop occurring in the second electrode. | 05-09-2013 |
20130112961 | Organic Semiconductor Material and Light-Emitting Element, Light-Emitting Device, Lighting System, and Electronic Device Using the Same - Disclosed is a novel organic semiconductor material which has a twisted quaterphenylene skeleton as a central unit and simultaneously possesses a skeleton having an electron-transporting property and a skeleton having a hole-transporting property at the terminals of the quaterphenylene skeleton. Specifically, the organic semiconductor material has a [1,1′:2′,1″:2″,1′″]quaterphenyl-4-4′″-diyl group, and one of the terminals of the [1,1′:2′,1″:2″,1′″]quaterphenyl-4-4′″-diyl group is bonded to a skeleton having an electron-transporting property such as a benzoxazole group or an oxadiazole group. A skeleton having a hole-transporting property such as diarylamino group is introduced at the other terminal. This structure allows the formation of a compound having a bipolar property, a high molecular weight, an excellent thermal stability, a large band gap, and high triplet excitation energy. | 05-09-2013 |
20130112981 | Semiconductor Device, and Method of Forming the Same - In order to realize a semiconductor device of enhanced TFT characteristics, a semiconductor thin film is selectively irradiated with a laser beam at the step of crystallizing the semiconductor thin film by the irradiation with the laser beam. By way of example, only driver regions ( | 05-09-2013 |
20130119358 | Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a light-emitting device having a light-emitting portion having a light-emitting element in a space surrounded by a support substrate, a metal substrate, and a sealing material, in which the sealing material is provided to surround the periphery of the light-emitting portion, the light-emitting element has a first electrode, a layer having a light-emitting organic compound, and a second electrode, the support substrate and the first electrode are each capable of transmitting light emitted from the light-emitting organic compound, and the space contains gas inert to the light-emitting element or is in a vacuum. The light-emitting device has, over the second electrode, a first high-emissivity layer that has higher emissivity than the second electrode and is thermally connected to the second electrode, and a low-reflectivity layer with which a metal substrate surface facing the support substrate is provided and which has lower reflectivity than the metal substrate. | 05-16-2013 |
20130119379 | Light Emitting Device - It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element. | 05-16-2013 |
20130119389 | Semiconductor Device and Method of Manufacturing Same - A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction. | 05-16-2013 |
20130119408 | Display Device and Method for Fabricating the Same - An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder | 05-16-2013 |
20130126883 | Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof - A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×10 | 05-23-2013 |
20130126912 | Light Emitting Device and Method of Driving the Light Emitting Device - A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method. | 05-23-2013 |
20130126936 | Light-Emitting Element and Display Device - When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode. Therefore, the present invention can provide a light-emitting element typified by an organic EL element in which a range of choice of materials that can be used as the intermediate conductive layer is broadened extremely, and which can realize a high light-emitting efficiency, a low power consumption and a high reliability, and further a display device using the light-emitting element. | 05-23-2013 |
20130129050 | Semiconductor Device and Method of Driving the Same - To provide a semiconductor device and a driving method of the same that is capable of enlarging a signal amplitude value as well as increasing a range in which a linear input/output relationship operates while preventing a signal writing-in time from becoming long. The semiconductor device having an amplifying transistor and a biasing transistor and the driving method thereof, wherein an electric discharging transistor is provided and pre-discharge is performed. | 05-23-2013 |
20130134396 | Glass Pattern and Method for Forming the Same, Sealed Body and Method for Manufacturing the Same, and Light-Emitting Device - A glass pattern that can be used for a substrate provided with a material having low heat resistance and has increased productivity is provided. Further, a sealed body having high hermeticity and increased productivity is provided. Furthermore, a light-emitting device with high reliability including such a sealed body is provided. A glass sheet is used for a main portion of a glass pattern such as a straight line portion and a curved portion. In a joint portion of two glass sheets arranged in the corner portion, the straight line portion, or the like of the glass pattern, a frit paste is provided in contact with the glass sheets and is locally heated to remove the binder from the frit paste and to form a glass layer; thus, the glass sheets are fused to each other without any space provided therebetween. | 05-30-2013 |
20130134397 | Sealed Structure, Light-Emitting Device, Electronic Device, and Lighting Device - A sealed structure with high sealing capability, in which a pair of substrates is attached to each other with a glass layer is provided. The sealed structure has a first and second substrates, a first surface of the first substrate facing a first surface of the second substrate, and the glass layer which is in contact with the first and second substrates, defines a space between the first and second substrates, and is provided along the periphery of the first surface of the first substrate. The first substrate has a corner portion. The area of the first surface of the first substrate is smaller than or equal to that of the first surface of the second substrate. In at least one of respective welded regions between the glass layer and the first or second substrate, the width of the corner portion is larger than that of the side portion. | 05-30-2013 |
20130134398 | Sealed Structure, Light-Emitting Device, Electronic Device, and Lighting Device - A sealed structure which has high sealing capability and whose border can be slim is provided. The sealed structure includes a pair of substrates whose respective surfaces face each other with a space therebetween, and a glass layer which is in contact with the substrates, defines a space between the substrates, and has at least one corner portion and side portions in continuity with the corner portion. The width of the corner portion of the glass layer is smaller than or equal to that of the side portion of the same. The sealed structure may comprise a highly reliable light-emitting element including a layer containing a light-emitting organic compound provided between a pair of electrodes. | 05-30-2013 |
20130134400 | Organic Electroluminescent Device - An organic electroluminescence device of the present invention adapts a new concept in its configuration to improve its efficiency in addition to obtain a high reliability and good yielding. The organic electroluminescent device having an electroluminescent film containing an organic material capable of causing an electroluminescence and being arranged between a first electrode and a second electrode, includes: a carrier generation layer, which is a floating electrode, is embodied in the electroluminescent film; an insulting film between the first electrode and the electroluminescent film, and an insulating film between the second electrode and the electroluminescent film, wherein the organic electroluminescent device is driven by an alternating current bias. | 05-30-2013 |
20130134406 | Light-Emitting Element, Light Emitting Device, and Electronic Device - A light-emitting element includes a light-emitting layer having a two-layer structure in which a first light-emitting layer containing a first light-emitting substance and a second light-emitting layer containing a second light-emitting substance, which is in contact with the first light-emitting layer, are provided between an anode and a cathode. The first light-emitting layer is separated into two layers of a layer provided on the anode side and a layer provided on the cathode side. The layer provided on the anode side contains only a first light-emitting substance, or a first organic compound of less than 50 wt % and the first light-emitting substance of 50 wt % to 100 wt %. The layer provided on the cathode side contains a second organic compound and the first light-emitting substance. The second light-emitting layer, which is provided in contact with the first light-emitting layer, contains the second light-emitting substance and a third organic compound. | 05-30-2013 |
20130134430 | Display Device - Display bright in contrast can be obtained without discrination and flicker in the display device of the direct vision type whose pixel pitches are short to 20 μm or less. A liquid crystal panel is driven through the frame inverse driving method, and the vertical frame frequency is set to 120 Hz or more. Also, each of the pixels is arranged to correspond to one of R, G and B of color filters disposed on a TFT substrate side. | 05-30-2013 |
20130134570 | Sealed Body, Light-Emitting Module and Method of Manufacturing Sealed Body - A sealed body in which sealing is uniformly performed is provided. A light-emitting module in which sealing is uniformly performed is provided. A method of manufacturing the sealed body in which sealing is uniformly performed is provided. The sealed body comprises a first substrate alternately provided with a high-reflectivity region with respect to the energy ray and a low-reflectivity region with respect to the energy ray so as to overlap with a sealant surrounding a sealed object, and a second substrate capable of transmitting the energy ray. The sealed object is sealed between the first substrate and the second substrate by heating the sealant with irradiation with the energy ray through the second substrate. | 05-30-2013 |
20130135183 | Display Device, Electronic Device and Method of Driving Display Device - The present invention provides a display device which can display characters clearly and display images smoothly. An area gray scale method is adopted and a configuration of one pixel is changed depending on a mode, by selecting one or more display regions in each pixel. When characters are needed to be displayed clearly, one pixel is configured by selecting a stripe arrangement. Thus, clear display can be conducted. When images are needed to be displayed, one pixel is configured by selecting an indented state. Thus, smooth display can be conducted. | 05-30-2013 |
20130137200 | Method of Manufacturing Sealed Body and Method of Manufacturing Light-Emitting Device - Methods of manufacturing a sealed body and a light-emitting device with high airtightness in which generation of a crack in a substrate and a frit glass in an overlap region where laser light irradiation is started and ended is prevented are provided. A high-reflectivity region having high reflectivity with respect to laser light and a low-reflectivity region having lower reflectivity than the high-reflectivity region are provided in a region which overlaps with the frit glass and is over a substrate facing a substrate on which the frit glass is formed. When scanning with laser light is started from the low-reflectivity region, a crack is less likely to be generated in the frit glass. | 05-30-2013 |
20130137866 | Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - As a novel substance having a novel skeleton, a novel organometallic complex that can emit phosphorescence in the green to red wavelength region and has high emission efficiency and a high yield of synthesis is provided. One embodiment of the present invention is an organometallic complex in which a diketone having a five-membered or six-membered alicyclic structure composed of carbon and hydrogen is a ligand. | 05-30-2013 |
20130140577 | Semiconductor Device and Method for Preparing the Same - A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. Before forming the source electrode and the drain electrode, a crystalline silicon film for relaxing the stress is formed, then a contact hole connecting to the semiconductor film of the thin film transistor is opened, and a metal film to be the source electrode and the drain electrode is formed. | 06-06-2013 |
20130143345 | Method of Fabricating Light-Emitting Device and Apparatus for Manufacturing Light-Emitting Device - In this embodiment, an interval distance between a deposition source holder 17 and an object on which deposition is performed (substrate | 06-06-2013 |
20130147365 | Light-Emitting Device and Method of Driving Light-Emitting Device - Reduction of luminance dispersion of a plurality of light-emitting panels combined into one light-emitting device is achieved by the use of a new light-emitting device which has a photosensor, a plurality of light-emitting panels, DC/DC converters connected to their respective light-emitting panels, and a control circuit configured to control output currents of the DC/DC converters in accordance with illuminance data acquired with the photosensor. The control circuit successively turns on the plurality of light-emitting panels, and controls the output currents of the DC/DC converters in accordance with differences of the illuminance data acquired with the photosensor when the light-emitting panels are turned on. | 06-13-2013 |
20130157392 | Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. | 06-20-2013 |
20130157400 | Fabrication System and Manufacturing Method of Light Emitting Device - The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed. | 06-20-2013 |
20130161593 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.2 eV or less, and a difference in LUMO levels between the hole-transporting organic compound and the first light-emitting substance is greater than 0.3 eV. | 06-27-2013 |
20130161598 | Iridium Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A tris-type iridium complex in which a ligand having a distinctive nitrogen-containing five-membered heterocyclic skeleton is coordinated is provided. The ligand has a nitrogen-containing five-membered heterocyclic skeleton composed of 2 to 4 nitrogen atoms and one or more carbon atoms. In the skeleton, an aryl group is bonded to a carbon atom on both sides of which nitrogen atoms are positioned, and a tricycloalkyl group having a bridge structure and having 9 or 10 carbon atoms is bonded to one of the two nitrogen atoms positioned on both the sides of the carbon atom. The tricycloalkyl group having a bridge structure and having 9 or 10 carbon atoms may be an adamantyl group or a noradamantyl group. | 06-27-2013 |
20130161601 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - It is an object of the present invention to provide a light-emitting element with high light emission efficiency. It is another object of the present invention to provide a light-emitting element with a long lifetime. A light-emitting device is provided, which includes a light-emitting layer, a first layer, and a second layer between first electrode and a second electrode, wherein the first layer is provided between the light-emitting layer and the first electrode, the second layer is provided between the light-emitting layer and the second electrode, the first layer is a layer for controlling the hole transport, the second layer is a layer for controlling the electron transport, and a light emission from the light-emitting layer is obtained when voltage is applied to the first electrode and the second electrode so that potential of the first electrode is higher than potential of the second electrode. | 06-27-2013 |
20130162613 | Signal Converter Circuit, Display Device, and Electronic Device - To suppress an adverse effect of change in held data in a sample-and-hold circuit as a result of increase in operation speed on a generated parallel data signal. A signal converter circuit includes a first sample-and-hold circuit and a second sample-and-hold circuit each of which has a function of extracting and holding part of a serial data signal as a data in accordance with a sampling control signal and has a function of generating a data signal which is one of data signals of a parallel data signal by using the held data and outputting the data signal. The second sample-and-hold circuit includes a switch which has a function of selecting whether the potential of the data of the second sample-and-hold circuit is set to a reference potential or not in accordance with the sampling control signal of the first sample-and-hold circuit. | 06-27-2013 |
20130164437 | Film Formation Apparatus and Film Formation Method - A film formation apparatus with which a deposited film to cover a deposition object having a three-dimensional curved surface can be formed and a method of forming a deposited film to cover a three-dimensional curved surface. The film formation apparatus includes a deposition source having deposition directivity, a deposition-source-moving mechanism which moves the deposition source, a deposition-object-holding mechanism which holds a deposition object having a three-dimensional curved surface, a deposition-direction-changing mechanism which changes the deposition direction, and a control portion which controls the deposition-source-moving mechanism and the deposition-direction-changing mechanism. | 06-27-2013 |
20130165653 | Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a β-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R | 06-27-2013 |
20130175710 | Display Device and Method of Manufacturing Thereof - A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material. | 07-11-2013 |
20130178004 | Method for Manufacturing Light-Emitting Device - A full-color light-emitting device is achieved with plural kinds of light-emitting elements in each of which a stacked layer of a first material layer formed selectively with a droplet discharge apparatus and a second material layer formed by vapor-deposition method using the conductive-surface plate on which a layer containing an organic compound is formed is provided between a pair of electrodes. The first material layer is a layer in which an organic compound and a metal oxide which is an inorganic compound are mixed. By adjusting the thickness of the first material layer of each light-emitting element, which is different depending on an emission color, a blue light emission component, a green light emission component, or a red light emission component among a plurality of components for white light emission can be selectively emphasized and taken out by light interference phenomenon. | 07-11-2013 |
20130181955 | Display Device - The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion. | 07-18-2013 |
20130187187 | Light-Emitting Device, Display Device, and Semiconductor Device - A light-emitting device which includes a semiconductor layer; a first insulating layer over the semiconductor layer; a gate electrode and a first conductive layer over the first insulating layer; a second insulating layer over the gate electrode and the first conductive layer; source and drain electrodes and a second conductive layer over the second insulating layer; a third insulating layer over the source and drain electrodes and the second conductive layer; a first electrode and a third conductive layer over the third insulating layer; a planarization film covering an end portion of the first electrode; an electroluminescent layer over the first electrode; and a second electrode over the electroluminescent layer and the planarization film is provided. The second electrode is electrically connected to the third conductive layer through an opening portion provided in the planarization film. The opening portion overlaps with the first, second, and third conductive layers. | 07-25-2013 |
20130187536 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - It is an object to provide a light-emitting element which can reduce power consumption. A light-emitting element is provided, which includes a pair of electrodes and a light-emitting layer interposed between the pair of electrodes. The light-emitting layer includes at least a first layer and a second layer, each of the first layer and the second layer includes an emission center and a host material, the emission center is dispersed in the host material, a thickness of each of the first layer and the second layer is 1 nm or more and 10 nm or less, and the first layer is not in contact with the second layer. | 07-25-2013 |
20130193473 | Lighting Device - An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate). | 08-01-2013 |
20130194526 | Liquid Crystal Display Device and Electronic Device Including the Same - A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring. | 08-01-2013 |
20130200344 | Oxadiazole Derivative, and Light Emitting Element, Light Emitting Device, and Electronic Device Using the Oxadiazole Derivative - An oxadiazole derivative represented by the following general formula (G1) is synthesized and applied to the light emitting element, | 08-08-2013 |
20130201165 | Serial-Parallel Conversion Circuit, Method for Driving the Same, Display Device, and Semiconductor Device - A serial-parallel conversion circuit for converting a high-speed serial signal to a parallel signal is provided. Further, a display device with high image quality and fewer external connection terminals is provided. Furthermore, a method for driving a serial-parallel conversion circuit for converting a high-speed serial signal to a parallel signal is provided. A serial-parallel conversion circuit includes a plurality of units in each of which a sampling switch and an amplifier are connected to each other. In the serial-parallel conversion circuit, each sampling switch is configured to output part of a serial signal to its respective amplifier only through one transistor. | 08-08-2013 |