Patent application number | Description | Published |
20110012260 | METHOD OF DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT, DESIGNING APPARATUS, SEMICONDUCTOR INTEGRATED CIRCUIT SYSTEM, SEMICONDUCTOR INTEGRATED CIRCUIT MOUNTING SUBSTRATE, PACKAGE AND SEMICONDUCTOR INTEGRATED CIRCUIT - To provide a method of designing a semiconductor integrated circuit with a high workability also in an increase in a scale of an LSI and an enhancement in an integration and designing a semiconductor integrated circuit system in which an unnecessary radiation is reduced and which is excellent in a heat characteristic, a reverse design flow to that in the conventional art is implemented, and a mounting substrate such as a printed-circuit board is first designed and a package substrate for mounting an LSI is designed based on a result of the design of the mounting substrate, and a layout design of the LSI to be mounted on the package substrate is then carried out. | 01-20-2011 |
20110210453 | METHOD FOR DESIGNING ELECTRONIC SYSTEM - When an electronic system is designed, then if an integrated circuit chip (LSI), a package (PKG), and a printed circuit board (PCB) are designed separately and in parallel, it will be found near the end of the design process that a satisfactory electrical characteristic is not achieved. Therefore, a design procedure of each part (e.g., an LSI, a PKG, a PCB, etc.) is decided, and allocation of resources to a part which is designed with a higher priority is decided, and thereafter, the other parts start to be designed. Therefore, a basic interconnect distribution for a circuit board is calculated based on a prediction function for predicting an interconnect distribution for the circuit board using design information of the circuit board as input data, and is output. | 09-01-2011 |
20130299957 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip. | 11-14-2013 |
20150084180 | SEMICONDUCTOR DEVICE INCLUDING HEAT DISSIPATING STRUCTURE - A semiconductor device includes a substrate serving as a base and having a surface on which electrodes are provided, a semiconductor chip mounted to the surface of the substrate, a sealing portion sealing the semiconductor chip and the surface of the substrate, first vias each penetrating the sealing portion in a thickness direction of the sealing portion to reach the electrodes on the surface of the substrate, external terminals connected to the first vias, and second vias provided near the semiconductor chip, extending to such a depth that the second vias do not penetrate the sealing portion, and insulated from the substrate and the semiconductor chip. | 03-26-2015 |
Patent application number | Description | Published |
20090018364 | METHOD FOR NITRATING ISOUREA - An object of the present invention is to industrially advantageously produce N-nitroisoureas or a salt thereof which is useful as a synthetic intermediate for pharmaceuticals and pesticides. The present invention relates to a process for producing a compound represented by the formula (2): | 01-15-2009 |
20090192336 | PROCESS FOR PRODUCTION OF ALCOHOL COMPOUND - A process for the production of an alcohol compound represented by the formula (3): | 07-30-2009 |
20090259074 | PROCESS FOR PRODUCTION OF ALCOHOL COMPOUND - A process for the production of an alcohol compound represented by the formula (3): | 10-15-2009 |
20090281325 | METHOD FOR SELECTIVELY PRODUCING PRIMARY AMINE COMPOUND - Disclosed is a method for producing a primary amine compound represented by the formula (3): | 11-12-2009 |
20090287023 | METHOD FOR PRODUCING PRIMARY AMINE COMPOUND - Disclosed is a method for producing a primary amine compound represented by the formula (2) below, which is characterized in that a halogen compound represented by the formula (1) below, ammonia and formaldehyde are reacted with each other, and then the thus-obtained reaction product is [1] brought into contact with an aqueous solution of an acid or [2] reacted with a hydroxylamine under acidic conditions. By this method, a primary amine compound can be commercially advantageously produced by using a low-cost ammonia while suppressing production of a secondary amine as a by-product. (1) (In the formula, R | 11-19-2009 |
20100094022 | Method for Producing Thiazole Compound - Disclosed is a simple and advantageous method for producing a thiazole compound, which method is suitable for commercial-scale implementation. In this method, a thiazole compound is produced by a reaction between 2-halogeno-allylisothiocyanate and sulfuryl chloride generating a large amount of heat, while suppressing decrease in the yield of the thiazole compound. Specifically disclosed is a method for producing 2-chloro-5-chloromethylthiazole represented by the formula (1): | 04-15-2010 |