Seiji Nagai
Seiji Nagai, Kato JP
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20090310328 | FOLDING ELECTRONIC DEVICE AND DEVICE FOR REDUCING UNDESIRED PLAY IN HINGE DEVICE - A folding electronic device includes a fixed casing, a movable casing, and a hinge device connecting the fixed casing and the movable casing to allow rotational movement of the movable casing. The movable casing is openable with respect to the fixed casing. The hinge device has an axis extending over a land portion of the fixed casing and a land portion of the movable casing. A projection is provided in any of the following: at least one of end faces of the land portion of the fixed casing and an end face, opposed to one of the end faces, of the land portion of the movable casing. As the movable casing changes from a closed state to an open state, a gap between the projection and an end face opposed to the projection is increased. | 12-17-2009 |
Seiji Nagai, Nishikasugai-Gun JP
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20090197118 | Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device - Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection L | 08-06-2009 |
20090294909 | N-type group III nitride-based compound semiconductor and production method therefor - An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal. | 12-03-2009 |
Seiji Nagai, Kiyosu-Shi JP
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20110259261 | REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL - It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved. | 10-27-2011 |
20140000509 | SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR SEMICONDUCTOR CRYSTAL | 01-02-2014 |
20140360426 | Method for Producing a Group III Nitride Semiconductor Crystal and Method for Producing a GaN Substrate - The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer. | 12-11-2014 |
20140363954 | Method for Etching a Group III Nitride Semiconductor, Method for Producing a Group III Nitride Semiconductor Crystal, and Method for Producing a GaN Substrate - A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions. | 12-11-2014 |
Seiji Nagai, Kiyoshu-Shi JP
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20130199438 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL AND METHOD FOR PRODUCING A GaN SUBSTRATE - The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point. | 08-08-2013 |
Seiji Nagai, Atsugi-Shi JP
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20150231579 | PLANETARY MIXER - A planetary mixer which is used for production steps of various products in chemistry, medical treatment, electronics, ceramics, medicines, foods, feed and the like, and in which flame-shaped stirring blades are allowed to perform planetary motion in a tank, by which solid/liquid type treatment materials are subjected to stirring, blending, mixing/kneading, kneading or the like and it is intended to prevent adhesion of materials to a vertical side portion of the flame-shaped stirring blades. | 08-20-2015 |