Patent application number | Description | Published |
20080242115 | Semiconductor device and method for manufacturing semiconductor device - A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics. | 10-02-2008 |
20080265324 | Semiconductor device and method of manufacturing the same - A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO | 10-30-2008 |
20090114996 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET. | 05-07-2009 |
20100065918 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film. | 03-18-2010 |
20100159686 | Semiconductor device and method of manufacturing the same - A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO | 06-24-2010 |
20100173487 | Semiconductor apparatus and method of manufacturing the semiconductor apparatus - A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO | 07-08-2010 |
20100203704 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the semiconductor substrate on the surface of the semiconductor substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into a insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the semiconductor substrate, and oxygen. | 08-12-2010 |
20100210100 | Semiconductor device and method for manufacturing the same - It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si< | 08-19-2010 |
20120045882 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the semiconductor substrate on the surface of the semiconductor substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into a insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the semiconductor substrate, and oxygen. | 02-23-2012 |
20120184096 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si<31/12 above the first gate insulating film, and a second nickel silicide having a composition of Ni/Si≧31/12 on the second gate insulating film; and segregating aluminum at an interface between the first nickel silicide and the first gate insulating film by diffusing aluminum through the first nickel silicide. | 07-19-2012 |