Seiji Inumiya
Seiji Inumiya, Hopewell Junction, NY US
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20110062561 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device comprising: forming a p type region and an n type region in a main surface of a semiconductor substrate, the p type region and the n type region being insulated from each other with an element-isolation region; forming a first insulating film on the p type region and on the n type region, the first insulating film being made of any one of a silicon oxide film and a silicon oxynitride film; forming a lanthanum oxide film on the first insulating film on the p type region; forming a second insulating film both on the lanthanum oxide film on the p type region and on the first insulating film on the n type region, the second insulating film containing any one of hafnium and zirconium; and forming a titanium nitride film on the second insulating film, the titanium nitride film satisfying Ti | 03-17-2011 |
Seiji Inumiya, Carmel, NY US
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20100133623 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A silicon oxynitride film is formed on entire surface of a semiconductor substrate, a lanthanum oxide film is formed on the silicon oxynitride film and the lanthanum oxide film is removed from a pMOS region. Then, a nitrided hafnium silicate film serving as a highly dielectric film is formed on the entire surface, an aluminum-containing titanium nitride film is formed, a polysilicon film is formed, and the stacked films are patterned into a gate electrode configuration. Next, impurities are introduced into a source/drain region, and an annealing for activating the impurities is utilized to diffuse the aluminum included in the aluminum-containing titanium nitride film to the interface between the silicon oxynitride film and the nitrided hafnium aluminum silicate film in the pMOS region. | 06-03-2010 |
20100187612 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region. | 07-29-2010 |
Seiji Inumiya US
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20100133626 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film. | 06-03-2010 |
Seiji Inumiya, Kanagawa-Ken JP
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20100025780 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr. | 02-04-2010 |
20120077336 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr. | 03-29-2012 |
Seiji Inumiya, Kanagawa JP
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20090194821 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film. | 08-06-2009 |
20100003813 | Semiconductor device and method of fabricating the same - According to the present invention, there is provided a semiconductor device comprising: | 01-07-2010 |
Seiji Inumiya, Tsukuba-Shi JP
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20090000547 | Semiconductor device fabrication method and fabrication apparatus - According to the present invention, there is provided a semiconductor device fabrication method comprising: | 01-01-2009 |
Seiji Inumiya, Tokyo JP
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20140070289 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a ferroelectric memory includes a gate insulation film formed on a semiconductor substrate, a ferroelectric film formed on the gate insulation film, and a control electrode formed on the ferroelectric film. The ferroelectric film is a film containing a metal, which is hafnium or zirconium, and oxygen, and contains an element other than the metal at a concentration lower than a concentration of the metal. | 03-13-2014 |
Seiji Inumiya, Yokkaichi-Shi JP
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20140070290 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al). | 03-13-2014 |
Seiji Inumiya, Yokkaichi JP
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20150179657 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device is provided with a semiconductor channel region; a first insulating layer including an oxide film disposed in contact with the semiconductor channel region, an yttrium oxide containing film disposed on the oxide film, and a hafnium oxide film having an orthorhombic phase III structure disposed on the yttrium oxide containing film; and a control electrode disposed on the first insulating layer. | 06-25-2015 |