Patent application number | Description | Published |
20080219043 | Word Line Transistor Strength Control for Read and Write in Spin Transfer Torque Magnetoresistive Random Access Memory - Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations. | 09-11-2008 |
20080219044 | Read Disturb Reduction Circuit for Spin Transfer Torque Magnetoresistive Random Access Memory - Systems, circuits and methods for reducing read disturbances in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A resistive element can be used during the read operation to control the read current and control read disturbances. An isolation element can be used to isolate the resistive element from the circuit during write operations. | 09-11-2008 |
20080247222 | Spin Transfer Torque Magnetoresistive Random Access Memory and Design Methods - Systems, circuits and methods for determining read and write voltages for a given word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that the read operations occur in the linear region of the word line transistor. | 10-09-2008 |
20090103354 | Ground Level Precharge Bit Line Scheme for Read Operation in Spin Transfer Torque Magnetoresistive Random Access Memory - Systems, circuits and methods for read operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A plurality of bit cells, each coupled to one of a plurality of bit lines, word lines and source lines are provided. A plurality of precharge transistors corresponding to one of the plurality of bit lines are configured to discharge the bit lines to ground prior to a read operation. | 04-23-2009 |
20090154274 | Memory Read Stability Using Selective Precharge - A memory device utilizes selective precharge and charge sharing to reduce a bit line voltage before accessing a bit cell. A reduction in bit line voltage is achieved by precharging different sections of the bit line to different voltages (e.g., a supply voltage and ground) and using charge sharing between these sections. Read stability improves as a result of the reduction of bit line voltage. The relative capacitance difference between bit line sections determines the bit line voltage after charge sharing. Thus, the memory device is tolerant to process or temperature variations. The bit line voltage may be controlled in design by selecting the sections that are precharged to supply voltage or ground. | 06-18-2009 |
20090158101 | Adapting Word Line Pulse Widths in Memory Systems - Systems, circuits and methods for adapting word line (WL) pulse widths used in memory systems are disclosed. One embodiment of the invention is directed to an apparatus comprising a memory system. The memory system comprises: a memory operating according to a wordline (WL) pulse with an associated WL pulse width; a built-in self-test (BIST) unit that interfaces with the memory, the BIST unit being configured to run a self-test of the internal functionality of the memory and provide a signal indicating if the memory passed or failed the self-test; and an adaptive WL control circuit that interfaces with the BIST unit and the memory, the adaptive WL control circuit being configured to adjust the WL pulse width of the memory based on the signal provided by the BIST unit. | 06-18-2009 |
20090161413 | MRAM Device with Shared Source Line - In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell. | 06-25-2009 |
20090172452 | System and Method of Leakage Control in an Asynchronous System - Systems and methods of leakage control in an asynchronous pipeline are disclosed. In an embodiment, a signal is received from a preceding stage at an operative stage of an asynchronous circuit device, and a switch associated with the operative stage is activated in response to the control signal being sent to the operative stage to enable power to the operative stage. | 07-02-2009 |
20090265678 | System and Method of Resistance Based Memory Circuit Parameter Adjustment - Systems and methods of resistance based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance based memory circuit includes selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further includes performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter. | 10-22-2009 |
20090323404 | Write Operation for Spin Transfer Torque Magnetoresistive Random Access Memory with Reduced Bit Cell Size - Systems, circuits and methods for controlling write operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A reduced bit cell size is achieved by arranging the source lines (SL) substantially in parallel with the word lines (WL) and substantially perpendicular to the bit lines (BL). Further, in one embodiment during a write operation, a high logic/voltage level is applied to the bit lines of unselected bit cells to prevent an invalid write operation. | 12-31-2009 |
20090323405 | Controlled Value Reference Signal of Resistance Based Memory Circuit - Systems and methods of controlled value reference signals of resistance based memory circuits are disclosed. In a particular embodiment, a circuit device is disclosed that includes a first input configured to receive a reference control signal. The circuit device also includes an output responsive to the first input to selectively provide a controlled value reference voltage to a sense amplifier coupled to a resistance based memory cell. | 12-31-2009 |
20100039872 | Dual Power Scheme in Memory Circuit - A semiconductor memory device includes address signal level shifters configured to transform a low level address signal into a higher level address signal. A decoder is configured to receive the higher level address signal and, in response, provide word line signals. Write drivers receive low level data input signals and configure bitlines in response to the received input. Memory cells are responsive to the word line signals and to the configured bit lines for storing data therein. | 02-18-2010 |
20100052763 | CMOS Level Shifter Circuit Design - A level shifting circuit has a pair of assist circuits. The level shifting circuit includes an input point, an output point, a pair of cross-coupled PMOS transistors coupled to the output point, and a pair of NMOS transistors coupled between the input and output points. Each assist circuit includes a pair of PMOS transistors, one responsive to an input applied to the input point, the other responsive to the drain voltage of one of the NMOS transistors. The assist circuits temporarily weaken the cross-coupled PMOS transistors when an input changes from low to high, or from high to low. The assist circuits also transiently boost the output. | 03-04-2010 |
20100061144 | Memory Device for Resistance-Based Memory Applications - In a particular embodiment, a memory device is disclosed that includes a memory cell including a resistance-based memory element coupled to an access transistor. The access transistor has a first oxide thickness to enable operation of the memory cell at an operating voltage. The memory device also includes a first amplifier configured to couple the memory cell to a supply voltage that is greater than a voltage limit to generate a data signal based on a current through the memory cell. The first amplifier includes a clamp transistor that has a second oxide thickness that is greater than the first oxide thickness. The clamp transistor is configured to prevent the operating voltage at the memory cell from exceeding the voltage limit. | 03-11-2010 |
20100072566 | Magnetic Element Utilizing Protective Sidewall Passivation - Exemplary embodiments of the invention are directed to magnetic elements including a passivation layer for isolation from other on-chip elements. One embodiment is directed to an apparatus comprising a magnetic tunnel junction (MTJ) element. The MTJ element comprises: a first ferromagnetic layer; a second ferromagnetic layer; an insulating layer disposed between the first and second ferromagnetic layers; and an MTJ passivation layer forming protective sidewalls disposed adjacent to the first ferromagnetic layer, the second ferromagnetic layer, and the insulating layer. | 03-25-2010 |
20100110775 | Word Line Voltage Control in STT-MRAM - Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. The word line driver is configured to provide a word line voltage greater than a supply voltage below a transition voltage of the supply voltage and to provide a voltage less than the supply voltage for supply voltages above the transition voltage. | 05-06-2010 |
20100110776 | Data Protection Scheme during Power-Up in Spin Transfer Torque Magnetoresistive Random Access Memory - A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array including a plurality of bit cells, a power-up controller, and a first plurality of precharge transistors is disclosed. The plurality of bit cells are each coupled to one of a plurality of bit lines and word lines. The power-up controller is configured to provide a power-up control signal to control the voltage level of at least one of the bit lines or the word lines during power-up. The first plurality of precharge transistors are respectively coupled to at least one of the plurality of bit lines or the plurality of word lines, each precharge transistor being configured to discharge a corresponding bit line or word line to a desired voltage level based on the power-up control signal. | 05-06-2010 |
20100142260 | Data Integrity Preservation In Spin Transfer Torque Magnetoresistive Random Access Memory - Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. A write-back circuit configured to detect a read value of the bit cell and is configured to write back the read value to the bit cell after a read operation. | 06-10-2010 |
20100142303 | Digitally-Controllable Delay for Sense Amplifier - Circuits, apparatuses, and methods of interposing a selectable delay in reading a magnetic random access memory (MRAM) device are disclosed. In a particular embodiment, a circuit includes a sense amplifier, having a first input, a second input, and an enable input. A first amplifier coupled to an output of a magnetic resistance-based memory cell and a second amplifier coupled to a reference output of the cell also are provided. The circuit further includes a digitally-controllable amplifier coupled to a tracking circuit cell. The tracking circuit cell includes at least one element that is similar to the cell of the magnetic resistance-based memory. The first input of the sense amplifier is coupled to the first amplifier, the second input of the sense amplifier is coupled to the second amplifier, and the enable input is coupled to the third digitally-controllable amplifier via a logic circuit. The sense amplifier may generate an output value based on the amplified values received from the output of the magnetic resistance-based memory cell and the reference cell once the sense amplifier receives an enable signal from the digitally-controllable amplifier via the logic circuit. | 06-10-2010 |
20100157654 | Balancing A Signal Margin Of A Resistance Based Memory Circuit - A resistance based memory circuit is disclosed. The circuit includes a first transistor load of a data cell and a bit line adapted to detect a first logic state. The bit line is coupled to the first transistor load and coupled to a data cell having a magnetic tunnel junction (MTJ) structure. The bit line is adapted to detect data having a logic one value when the bit line has a first voltage value, and to detect data having a logic zero value when the bit line has a second voltage value. The circuit further includes a second transistor load of a reference cell. The second transistor load is coupled to the first transistor load, and the second transistor load has an associated reference voltage value. A characteristic of the first transistor load, such as transistor width, is adjustable to modify the first voltage value and the second voltage value without substantially changing the reference voltage value. | 06-24-2010 |
20100172173 | System And Method To Read And Write Data A Magnetic Tunnel Junction Element - A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device includes a spin transfer torque magnetic tunnel junction (STT-MTJ) element and a transistor with a first gate and a second gate coupled to the STT-MTJ element. | 07-08-2010 |
20100188894 | IN-SITU RESISTANCE MEASUREMENT FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) - A method of measuring resistance of a magnetic tunnel junction (MTJ) of an MRAM memory cell includes applying a voltage of a selected level to a memory cell comprising an MTJ in series with a memory cell transistor in a conducting state. A current through the memory cell is determined. A variable voltage is applied to a replica cell not having an MTJ and comprising a replica cell transistor in a conducting state. A value of the variable voltage is determined, wherein a resulting current through the replica cell is substantially the same as the current through the memory cell. The MTJ resistance is computed by taking the difference of the memory cell voltage and the determined variable replica cell voltage and dividing the result by the determined memory cell current. | 07-29-2010 |
20100195376 | BIT LINE VOLTAGE CONTROL IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY - A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) and associated read operations are disclosed. A bit cell includes a magnetic tunnel junction (MTJ) and a word line transistor, the bit cell being coupled to a bit line and a source line. A clamping circuit is coupled to the bit line and is configured to clamp the bit line voltage to a desired voltage level during a read operation of the STT-MRAM to prevent the bit line voltage from exceeding the desired voltage level. The desired voltage level is less than a write voltage threshold associated with a write operation of the STT-MRAM. | 08-05-2010 |
20100195379 | System and Method of Pulse Generation - In a particular embodiment, a device includes a reference voltage circuit to generate a controlled voltage. The device includes a frequency circuit configured to generate a frequency output signal having a pre-set frequency and a counter to generate a count signal based on the pre-set frequency. The device also includes a delay circuit coupled to receive the count signal and to produce a delayed digital output signal and a latch to generate a pulse. The pulse has a first edge responsive to a write command and a trailing edge formed in response to the delayed digital output signal. In a particular embodiment, the pulse width of the pulse corresponds to an applied current level that exceeds a critical current to enable data to be written to an element of the memory but does not exceed a predetermined threshold. | 08-05-2010 |
20100250865 | Self-Timing For A Multi-Ported Memory System - Multi-ported memory systems (e.g., register files) employ self-timing for operational synchronization. Thus, rather than using a reference clock duty cycle for operational synchronization, as in conventional multi-ported register files, embodiments of the present disclosure employ self-timing for such operational synchronization. According to certain embodiments, self-timing is employed to synchronize all the internal events within the memory so that all the events are spaced in time for appropriate synchronization. For instance, the completion of one event leads to triggering another event, the completion of which leads to triggering another event, and so on. Thus, in one embodiment, the self-timing is achieved by referencing the operational events with the memory (or register file) to each other, rather than to a reference clock duty cycle. | 09-30-2010 |
20110051502 | Flexible Word-Line Pulsing For STT-MRAM - A method for generating a variable pulse width signal on an integrated circuit (IC) chip, includes receiving a first clock signal on the IC chip and receiving a second clock signal on the IC chip having a variable delay relative to the first clock signal. A signal having a rising edge triggered by a rising edge of the first clock signal and a falling edge triggered by a rising edge of the second clock signal is output. The output signal is provided to circuitry on the chip, such as a magnetoresistive junction (MTJ) cell of a spin torque transfer magnetic random access memory (STT-MRAM). | 03-03-2011 |
20110110174 | System and Method of Operating a Memory Device - A system and method of operating a memory device is disclosed. In a particular embodiment, an apparatus is disclosed that includes a bit cell coupled to a first bit line and to a second bit line. The apparatus also includes a sense amplifier coupled to the first bit line and to the second bit line. The apparatus includes a loop circuit configured to provide a sense amplifier enable signal to the sense amplifier in response to receiving a first signal. The apparatus also includes a wordline enable circuit configured to provide a wordline enable signal to a wordline driver in response to receiving a second signal. The loop circuit receives the first signal before the wordline enable circuit receives the second signal. | 05-12-2011 |
20120072793 | Registers with Full Scan Capability - A scan test of a first latch and a second latch couples a given scan value to the input of the first latch, to switch the first latch to a state corresponding to the scan value, uncouples the scan value from the first latch to latch the first latch at that state, couples the output of the first latch while latched at that state to the input of the second latch to switch the second latch to that state, and uncoupling the output of the first latch from the input of the second latch to latch the second latch at that state. | 03-22-2012 |
20130058172 | Code-Based Differential Charging of Bit Lines of a Sense Amplifier - A circuit includes a plurality of capacitors responsive to a plurality of latches that store a test code. A first bit line is coupled to a bit cell and coupled to a sense amplifier. A second bit line is coupled to the bit cell and coupled to the sense amplifier. A differential charge from a set of the plurality of capacitors is applied to the first bit line and to the second bit line. The set of the plurality of capacitors is determined based on the test code and the test code is independent of an output of the sense amplifier. | 03-07-2013 |
20130208556 | Power-On-Reset (POR) Circuits for Resetting Memory Devices, and Related Circuits, Systems, and Methods - Power-on-reset (POR) circuits for resetting memory devices, and related circuits, systems, and methods are disclosed. In one embodiment, a POR circuit is provided. The POR circuit is configured to receive as input, a plurality of decoded address outputs from at least one memory decoding device. The POR circuit is further configured to generate a POR reset if any of the plurality of decoded address outputs are active. As a result, memory decoding device latches can be reset to a known, default condition to avoid causing an unintentional word line selection in the memory during power-on state before an external reset is available. Because the POR circuit can generate the POR reset without need of an external reset, the memory decoding devices can be reset quickly to allow for quicker availability of memory after a power-on condition. | 08-15-2013 |
20130294139 | CIRCUITS CONFIGURED TO REMAIN IN A NON-PROGRAM STATE DURING A POWER-DOWN EVENT - In a particular embodiment, an apparatus includes a one-time programmable (OTP) memory circuit configured to be responsive to a programming voltage. The OTP memory circuit includes an OTP memory array including OTP memory cells, a first power switch configured to decouple the OTP memory array from the programming voltage, and a second power switch configured to decouple a subset of the OTP memory cells from the programming voltage. | 11-07-2013 |
20140112061 | WRITE WORD-LINE ASSIST CIRCUITRY FOR A BYTE-WRITEABLE MEMORY - A write-assisted memory. The write-assisted memory includes a word-line decoder that is implemented within a low VDD power domain. The write-assisted memory also includes a write-segment controller that is partially implemented within the low VDD power domain and is partially implemented within a high VDD power domain. The write-assisted memory further includes a local write word-line decoder that is implemented within the high VDD power domain. | 04-24-2014 |
20140185348 | HYBRID TERNARY CONTENT ADDRESSABLE MEMORY - A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further includes interfacing an output of the first TCAM stage to an input of the second TCAM stage. The method also includes comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word. The first TCAM stage is different from the second TCAM stage. | 07-03-2014 |
20140185349 | STATIC NAND CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) - A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor. | 07-03-2014 |
20140198588 | N-WELL SWITCHING CIRCUIT - A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness. | 07-17-2014 |
20140198598 | SYSTEM AND METHOD OF PERFORMING POWER ON RESET FOR MEMORY ARRAY CIRCUITS - The disclosure relates to an apparatus for deactivating one or more predecoded address lines of a memory circuit in response to one or more of the predecoded address lines being activated upon powering on of at least a portion of the apparatus. In particular, the apparatus includes a memory device; an address predecoder configured to activate one or more of a plurality of predecoded address lines based on an input address, wherein the plurality of predecoded address lines are coupled to the memory device for accessing one or more memory cells associated with the one or more activated predecoded address lines; and a power-on-reset circuit configured to deactivate one or more of the predecoded address lines in response to the one or more of the predecoded address lines being activated upon powering on the at least portion of the apparatus. | 07-17-2014 |
20140266398 | METHOD AND SEMICONDUCTOR APPARATUS FOR REDUCING POWER WHEN TRANSMITTING DATA BETWEEN DEVICES IN THE SEMICONDUCTOR APPARATUS - A semiconductor apparatus is provided herein for reducing power when transmitting data between a first device and a second device in the semiconductor apparatus. Additional circuitry is added to the semiconductor apparatus to create a communication system that decreases a number of state changes for each signal line of a data bus between the first device and the second device for all communications. The additional circuitry includes a decoder coupled to receive and convert a value from the first device for transmission over the data bus to an encoder that provides a recovered (i.e., re-encoded) version of the value to the second device. One or more multiplexers may also be included in the additional circuitry to support any number of devices. | 09-18-2014 |
20140269112 | APPARATUS AND METHOD FOR WRITING DATA TO MEMORY ARRAY CIRCUITS - A write driver for a memory circuit includes a control circuit configured to: operate a first push-pull driver to generate a first drive signal in a first voltage domain at a first node based on an input signal in a second domain and in response to a mode select signal being in a first mode, wherein the first drive signal is at a same logic level as the input signal; operate a second push-pull driver to generate a second drive signal in the first voltage domain at a second node based on the input signal and in response to the mode select signal being in the first mode, wherein the second drive signal is at a complement logic level with respect to the input signal; and operate the first and second push-pull drivers to float the first and second nodes in response to the mode select signal being in a second mode. | 09-18-2014 |
20140321217 | APPARATUS AND METHOD FOR READING DATA FROM MULTI-BANK MEMORY CIRCUITS - The disclosure relates to an apparatus for reading data from a memory circuit that includes at least two memory banks. The apparatus includes a first multiplexer configured to generate data at a first output from a first selected one of a first set of bit lines of a first memory bank based on a select signal. The apparatus also includes a second multiplexer configured to generate data at a second output from a second selected one of a second set of bit lines of a second memory bank based on the select signal. Additionally, the apparatus includes a gating device configured to gate the data from either the first and second multiplexer outputs based on an enable signal. And, the apparatus includes an interface circuit configured to produce the gated data on a global bit line. | 10-30-2014 |
20140369152 | N-WELL SWITCHING CIRCUIT - A dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit biases the switched n-well to prevent voltage damage to the dual-mode PMOS transistor despite its relatively small size and thin gate-oxide thickness. | 12-18-2014 |
20150029778 | MASK-PROGRAMMED READ ONLY MEMORY WITH ENHANCED SECURITY - A mask-programmed read-only memory (MROM) has a plurality of column line pairs, each having a bit line and a complement bit line. The MROM includes a plurality of memory cells corresponding to a plurality of intersections between the column line pairs and a plurality of word liens. Each memory cell includes a high Vt transistor and a low Vt transistor. | 01-29-2015 |
20150029782 | WIDE RANGE MULTIPORT BITCELL - A multiport bitcell including a pair of cross-coupled inverters is provided with increased write speed and enhanced operating voltage range by the selective isolation of a first one of the cross-coupled inverters from a power supply and ground during a write operation. The write operation occurs through a write port that includes a transmission gate configured to couple a first node driven by the first cross-coupled inverter to a write bit line. A remaining second cross-coupled inverter in the bitcell is configured to drive a second node that couples to a plurality of read ports. | 01-29-2015 |
20150043265 | N-WELL SWITCHING CIRCUIT - A thin gate-oxide dual-mode PMOS transistor is disclosed that has a first mode of operation in which a switched n-well for the dual-mode PMOS transistor is biased to a high voltage. The dual-mode PMOS transistor has a second mode of operation in which the switched n-well is biased to a low voltage that is lower than the high voltage. The dual-mode PMOS transistor has a size and gate-oxide thickness each having a magnitude that cannot accommodate a permanent tie to the high voltage. An n-well voltage switching circuit is configured to bias the switched n-well to prevent voltage damage to the dual-mode PMOS transistor without the use of native transistors. | 02-12-2015 |
20150063046 | MEMORY TIMING CIRCUIT - Disclosed are various apparatuses and methods for a memory with a multiple word line design. A memory timing circuit may include a dummy word line including a first portion and a second portion and further including capacitative loading that is lumped in the second portion of the dummy word line, a first transistor connected to the first portion of the dummy word line and configured to charge the dummy word line, and a second transistor connected to the second portion of the dummy word line and configured to discharge the dummy word line. A method may include charging a dummy word line using a first transistor, and discharging the dummy word line using a second transistor, wherein the dummy word line includes a first portion and a second portion and further includes capacitative loading that is lumped in the second portion of the dummy word line. | 03-05-2015 |
20150067290 | MEMORY ACCESS TIME TRACKING IN DUAL-RAIL SYSTEMS - Disclosed are various apparatuses and methods for memory access time tracking in dual-rail systems. An apparatus may include a memory coupled to a first voltage rail and having a data output, a data circuit coupled to a second voltage rail and configured to receive the data output from the memory, and a timing circuit configured to adjust an access time of the memory based on a second voltage rail level. A method may include determining a voltage rail level of a data circuit, adjusting the access time of the memory based on the voltage rail level of the data circuit, outputting data from the memory, and receiving the output data by the data circuit. | 03-05-2015 |
20150085554 | STATIC NAND CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) - A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor. | 03-26-2015 |
20150085568 | READ/WRITE ASSIST FOR MEMORIES - An integrated circuit includes one or more bit cells, a word line coupled to the one or more bit cells, and a dummy word line arranged with the word line to have a capacitance therebetween. The capacitance provides a voltage boost or reduction of the word line to assist read and write operations. | 03-26-2015 |