Patent application number | Description | Published |
20080266988 | MULTI- PORT MEMORY DEVICE FOR BUFFERING BETWEEN HOSTS AND NON-VOLATILE MEMORY DEVICES - A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode. | 10-30-2008 |
20080285372 | MULTI- PORT MEMORY DEVICE FOR BUFFERING BETWEEN HOSTS AND NON-VOLATILE MEMORY DEVICES - A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode. | 11-20-2008 |
20100330793 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A method for forming a highly integrated semiconductor device having multiplayer conductive lines is presented. The method includes the operations of forming, etching, burying and forming. The first forming operation includes forming a line-type conductive layer on a semiconductor substrate including a buried gate to expose the gate. The etching operation includes etching the conductive layer to expose at least a region between one side of an active area defined in the semiconductor substrate and an opposite side of the neighboring active area, both the active areas being arranged next to each other in a major axis direction of the gate. The burying operation includes burying a first insulating film in the etched line-type conductive layer. The second forming operation includes forming a bit line passing through the center of the active area in a direction perpendicular to the major axis direction of the gate. | 12-30-2010 |
20130328199 | SEMICONDUCTOR DEVICE WITH SPACERS FOR CAPPING AIR GAPS AND METHOD FOR FABRICATING THE SAME - A method for fabricating memory device includes forming a bit line pattern including a first conductive layer and a hard mask stacked over a substrate, forming a sacrificial layer on sidewalls of the bit line pattern, forming a second conductive layer in contact with the sacrificial layer and adjacent to the bit line pattern, recessing the second conductive layer, forming an air gap between the recessed second conductive layer and the first conductive layer by removing the sacrificial layer, and forming an air gap capping layer on sidewalls of the hard mask to cap entrance of the air gap. | 12-12-2013 |
20140059285 | APPARATUS AND METHOD FOR DATA MOVEMENT - The present disclosure relates to an apparatus and method capable of carrying out data movement in a memory of a terminal. The apparatus includes a processor configured to transmit a command for data movement and address information for data movement in a memory to the memory, and the memory configured to perform the data movement in units of word line in the memory by using the address information, in response to reception of the command for moving the data. | 02-27-2014 |
20140175659 | SEMICONDUCTOR DEVICE INCLUDING AIR GAPS AND METHOD OF FABRICATING THE SAME - This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs. | 06-26-2014 |