Patent application number | Description | Published |
20120086900 | COMMON ELECTRODE PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a liquid crystal display according to an exemplary embodiment includes: forming a thin film transistor array panel including a fan-out region connecting a display area and a peripheral area; forming a common electrode on a substrate; forming a cutout in the common electrode by using a laser; forming a common electrode panel by cutting the substrate; and assembling the thin film transistor array panel and the common electrode panel, wherein the cutout is formed on the edge of the common electrode panel and a portion of the cutout is positioned on the portion corresponding to the fan-out region. | 04-12-2012 |
20120126233 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - Provided is a thin film transistor array panel. A thin film transistor array panel according to an exemplary embodiment includes a gate wire having a first region where the gate line is disposed, and a second region where the gate electrode is disposed, and a thickness of the gate wire formed in the first region is greater than the thickness of the gate wire that is formed in the second region. | 05-24-2012 |
20120138920 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel is provided that includes: a gate electrode that is disposed on an insulating substrate; a gate insulating layer that is disposed on the gate electrode; an oxide semiconductor that is disposed on the gate insulating layer; a blocking layer that is disposed on the oxide semiconductor; a source electrode and a drain electrode that are disposed on the blocking layer; a passivation layer that is disposed on the source electrode and drain electrode; and a pixel electrode that is disposed on the passivation layer. The blocking layer includes a first portion that is covered by the source electrode and drain electrode and a second portion that is not covered by the source electrode and drain electrode, and the first portion and the second portion include different materials. | 06-07-2012 |
20120248442 | METHOD OF FORMING A FINE PATTERN, DISPLAY SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME USING THE METHOD OF FORMING A FINE PATTERN - A method is provided for forming a fine pattern. In the method, a first fine pattern and a first metal pattern are formed by respectively patterning a first fine pattern layer on a base substrate and a first metal layer on the first fine pattern layer. A second fine pattern layer and a second metal layer are sequentially formed over the first fine pattern and the first metal pattern. The second metal layer is patterned, so that a second metal pattern between adjacent portions of the first fine pattern. The second fine pattern layer is patterned using the second metal pattern as a mask, so that a second fine pattern is formed between adjacent portions of the first fine pattern. | 10-04-2012 |
20120250151 | LENTICULAR UNIT FOR TWO-DIMENSIONAL/THREE-DIMENSIONAL AUTO-STEREOSCOPIC DISPLAY - A lenticular unit includes a transparent substrate; first electrodes being transparent and disposed on the substrate; a second electrode being transparent and elastic; and a transparent material layer interposed between the first and second electrodes and being deformable in a lens shape in a thickness direction depending on a potential applied between the first and second electrodes. | 10-04-2012 |
20130001573 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode. | 01-03-2013 |
20130032793 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy. | 02-07-2013 |
20130032794 | THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ARRAY PANEL - Provided is a thin film transistor and thin film transistor panel array. The thin film transistor includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate and partially overlapping with the gate electrode; a source electrode and a drain electrode spaced apart from each other with respect to a channel region of the semiconductor layer; an insulating layer disposed between the gate electrode and the semiconductor layer; and a barrier layer disposed between the semiconductor layer and the source electrode and between the semiconductor layer and the drain electrode, in which the barrier layer comprises graphene. An ohmic contact is provided based on the type of material used for the semiconductor layer. | 02-07-2013 |
20130037829 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern and the base substrate. | 02-14-2013 |
20130088667 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A manufacturing method of a liquid crystal display includes: forming an etch target layer including a conductive material on a first substrate; forming a first mask layer on the etch target layer; forming a block copolymer coating layer including a plurality of polymers on the first mask layer; processing the block copolymer coating layer to form a block copolymer pattern layer including first and second polymer blocks; removing one of the first or second polymer blocks to form a second mask pattern layer; etching the first mask layer by using the second mask pattern layer as an etching mask to form a first mask pattern layer; and etching the etch target layer by using the first mask pattern layer as an etching mask to form a first electrode. The first electrode includes a plurality of the first minute patterns extending in a predetermined direction and having a polarization function. | 04-11-2013 |
20130092942 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to an exemplary embodiment of the present disclosure includes: an insulating substrate; a gate electrode disposed on the insulating substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor; an ohmic contact layer disposed at an interface between at least one of the source and drain electrodes and the semiconductor. Surface heights of the source and drain electrodes different, while surface heights of the semiconductor and the ohmic contact layer are the same. The ohmic contact layer is made of a silicide of a metal used for the source and drain electrodes. | 04-18-2013 |
20130093985 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - A liquid crystal display is provided. The liquid crystal display includes a substrate. A thin film transistor is disposed on the substrate. A passivation layer is disposed on the thin film transistor. A pixel electrode is disposed on the passivation layer. A minute space layer is disposed on the pixel electrode and includes a liquid crystal injection hole. A first overcoat is disposed on the minute space layer. A common electrode is disposed on the first overcoat. A capping layer covers the liquid crystal injection hole. The capping layer includes graphene. | 04-18-2013 |
20130098869 | Method for Forming Minute Pattern and Method for Forming Minute Pattern Mask - A method for forming a minute pattern mask includes forming an etching target layer on a substrate. A convex pattern including a plurality of convex parts is formed on the etching target layer. A resin composition is coated on the convex pattern to form a resin layer including a first region neighboring the convex part and a second region positioned between the neighboring convex parts. The resin layer is ashed or etched to form the plurality of first resin patterns. The plurality of first resin patterns is processed to form a minute pattern mask including a plurality of second resin patterns. The etching target layer is etched using the plurality of second resin patterns as an etch mask to form a minute pattern. | 04-25-2013 |
20130105826 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20130200404 | THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness. | 08-08-2013 |
20130256652 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 10-03-2013 |
20130260105 | GLASS SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing a glass plate for a display device, a protection film is formed on a mother glass plate. The protection film is patterned to form a protection film pattern which prevents ion exchange. Chemically strengthening the mother glass plate includes exchanging alkaline ions of the mother glass plate including the protection film pattern are exchanged with metal ions of a molten salt to form a first chemically strengthened portion, a non-strengthened portion and a second chemically strengthened portion. The upper surface of the protection film pattern is cut in the scribe line area to separate the glass plate at the non-strengthened portion of the mother glass plate, from the mother glass plate. | 10-03-2013 |
20140042429 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. | 02-13-2014 |
20140054579 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer. | 02-27-2014 |
20140061632 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide semiconductor disposed between the source electrode and the drain electrode; a gate insulation pattern disposed on the active pattern; a gate electrode disposed on the gate insulation pattern and overlapping with the channel; and a light-blocking pattern disposed between the base substrate and the active pattern. | 03-06-2014 |
20140138671 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer. | 05-22-2014 |
20140138684 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 05-22-2014 |
20140145178 | SWITCHING ELEMENT, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material. | 05-29-2014 |
20140167040 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode. | 06-19-2014 |
20140183522 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel including a substrate; a channel region disposed on the substrate and including oxide semiconductor disposed on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor and facing each other at both sides, centered on the oxide semiconductor; an insulating layer disposed on the oxide semiconductor; and a gate electrode disposed on the insulating layer. The drain electrode includes a first drain region and a second drain region; the charge mobility of the first drain region is greater than that of the second drain region, the source electrode includes a first source region and a second source region, and the charge mobility of the first source region is greater than that of the second source region. | 07-03-2014 |
20140361302 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel according to an exemplary embodiment of the present disclosure includes: an insulating substrate; a gate electrode disposed on the insulating substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor; an ohmic contact layer disposed at an interface between at least one of the source and drain electrodes and the semiconductor. Surface heights of the source and drain electrodes different, while surface heights of the semiconductor and the ohmic contact layer are the same. The ohmic contact layer is made of a silicide of a metal used for the source and drain electrodes. | 12-11-2014 |
20140363921 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned. | 12-11-2014 |