Patent application number | Description | Published |
20120012855 | SOLID-STATE LIGHT EMITTERS HAVING SUBSTRATES WITH THERMAL AND ELECTRICAL CONDUCTIVITY ENHANCEMENTS AND METHOD OF MANUFACTURE - Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electrical conductivity for the SSLE. In one embodiment, the conductors have higher thermal and electrical conductivities than the carrier substrate supporting the SSLE. | 01-19-2012 |
20120032137 | SOLID STATE LIGHTING DEVICES WITH DIELECTRIC INSULATION AND METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure. | 02-09-2012 |
20120241786 | SOLID STATE OPTOELECTRONIC DEVICE WITH PLATED SUPPORT SUBSTRATE - A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing. | 09-27-2012 |
20130026481 | TEXTURED OPTOELECTRONIC DEVICES AND ASSOCIATED METHODS OF MANUFACTURE - Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device. | 01-31-2013 |
20130049016 | DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS - Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein. | 02-28-2013 |
20130175560 | VERTICAL SOLID-STATE TRANSDUCERS AND SOLID-STATE TRANSDUCER ARRAYS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts. | 07-11-2013 |
20130234193 | ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS - Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material. | 09-12-2013 |
20140203239 | SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures. | 07-24-2014 |
20140295594 | DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS - Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein. | 10-02-2014 |
20140319536 | SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material. | 10-30-2014 |
20150028347 | LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material. | 01-29-2015 |