Patent application number | Description | Published |
20080254633 | MULTIPLE EXPOSURE LITHOGRAPHY METHOD INCORPORATING INTERMEDIATE LAYER PATTERNING - A method of patterning a semiconductor substrate includes creating a first set of patterned features in a first inorganic layer; creating a second set of patterned features in one of the first inorganic layer and a second inorganic layer; and transferring, into an organic underlayer, both the first and second sets of patterned features, wherein the first and second sets of patterned features are combined into a composite set of patterned features that are transferable into the substrate by using the organic underlayer as a mask. | 10-16-2008 |
20080305623 | Semiconductor device manufacturing methods - Methods for manufacturing semiconductor devices are disclosed. In a preferred embodiment, a method of processing a semiconductor device includes providing a workpiece, the workpiece comprising a material layer to be patterned disposed thereon. A hard mask is formed over the material layer. A first pattern is formed in the hard mask and an upper portion of the material layer using a first etch process. A second pattern is formed in the hard mask and the upper portion of the material layer using a second etch process, the second pattern being different than the first pattern. The first pattern and the second pattern are formed in a lower portion of the material layer using a third etch process and using the hard mask as a mask. | 12-11-2008 |
20080311508 | PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS - A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate. | 12-18-2008 |
20090061355 | PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS - A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiO | 03-05-2009 |
20090065956 | MEMORY CELL - Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the memory cell includes fa first device having a first conductive line extending over a first active region and having a first line end of the first conductive line positioned over an isolation region adjacent to the first active region; and a second device having a second conductive line extending over one of a second active region and a contact element and having a second line end of the second conductive line positioned over the isolation region adjacent to the one of the second active region and the contact element, wherein the first line end and the second line end each include a bulbous end that is distanced from a respective active region or contact element. | 03-12-2009 |
20090068837 | LINE ENDS FORMING - Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element. | 03-12-2009 |
20090081563 | Integrated Circuits and Methods of Design and Manufacture Thereof - Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes depositing a gate material over a semiconductor substrate, and depositing a first resist layer over the gate material. A first mask is used to pattern the first resist layer to form first and second resist features. The first resist features include pattern for gate lines of the semiconductor device and the second resist features include printing assist features. A second mask is used to form a resist template; the second mask removes the second resist features. | 03-26-2009 |
20090203200 | GATE PATTERNING SCHEME WITH SELF ALIGNED INDEPENDENT GATE ETCH - A method for self-aligned gate patterning is disclosed. Two masks are used to process adjacent semiconductor components, such as an nFET and pFET that are separated by a shallow trench isolation region. The mask materials are chosen to facilitate selective etching. The second mask is applied while the first mask is still present, thereby causing the second mask to self align to the first mask. This avoids the undesirable formation of a stringer over the shallow trench isolation region, thereby improving the yield of a semiconductor manufacturing operation. | 08-13-2009 |
20130017486 | PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS - A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiO | 01-17-2013 |