Patent application number | Description | Published |
20120104537 | Semiconductor Device and a Method for Manufacturing a Semiconductor Device - A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body with a first semiconductor region and a second semiconductor region spaced apart from each other. A first metallization is in contact with the first semiconductor region. A second metallization is in contact with the second semiconductor region. An insulating region extends between the first semiconductor region and the second semiconductor region. A semi-insulating region having a resistivity of about 10 | 05-03-2012 |
20140038413 | Method of Manufacturing a Semiconductor Device including a Dielectric Structure - A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner. | 02-06-2014 |
20150014815 | Semiconductor Device and a Method for Manufacturing a Semiconductor Device Having a Semi-Insulating Region - A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure. | 01-15-2015 |
20150206983 | Semiconductor Diode and Method of Manufacturing a Semiconductor Diode - A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other. | 07-23-2015 |
20150214347 | Semiconductor Device Including Undulated Profile of Net Doping in a Drift Zone - A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×10 | 07-30-2015 |
Patent application number | Description | Published |
20120084901 | METHOD FOR PRODUCING A CROSS-LINKED ELASTOMER - The invention relates to method for producing a crosslinked elastomer by radiating a polymer dispersion of at least one crosslinkable polymer with electromagnetic radiation in the ultraviolet (UV light) and/or visible spectral range, wherein the crosslinking is performed in at least two stages as pre-crosslinking and post-crosslinking and at least one photoinitiator is added to the polymer dispersion to trigger the crosslinking reaction prior to the pre-crosslinking. At least one photoinitiator is added once again to the pre-crosslinked polymer dispersion prior to and/or during the post-crosslinking, and the post-crosslinking is also performed with electromagnetic radiation in the ultraviolet (UV light) and/or visible spectral range. | 04-12-2012 |
20140096307 | METHOD FOR MODIFYING THE SURFACE OF AN ELASTOMER PRODUCT - The invention relates to a method for modifying the surface of an elastomer product with unsaturated carbon-carbon bonds, in particular a glove, whereby the unsaturated carbon-carbon bonds in the region of the surface are at least partially saturated by a photochemical reaction with at least one thiol or by applying or dipping to apply a layer of latex to at least certain regions of the surface of the elastomer product, the unsaturated carbon-carbon bonds of which in the region of its surface are at least partially saturated by a photochemical reaction with at least one thiol. | 04-10-2014 |
20140096308 | ELASTOMER PRODUCT WITH COVALENTLY BONDED PARTICLES - The invention relates to a method of bonding particles to the surface of an elastomer, in particular a glove, the surface of the elastomer being at least partially epoxidized, and the particles are covalently bonded to the epoxide groups after epoxidation of the elastomer surface. | 04-10-2014 |