Patent application number | Description | Published |
20080245957 | TUNING AN ION IMPLANTER FOR OPTIMAL PERFORMANCE - An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings. | 10-09-2008 |
20100055345 | HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION - An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam. | 03-04-2010 |
20100264328 | CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL - An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam. | 10-21-2010 |
20110259269 | SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION BEAM GENERATION - An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power. | 10-27-2011 |
20140326594 | EXTENDED LIFETIME ION SOURCE - An ion source includes an ion source chamber, a cathode disposed within the ion source chamber and configured to emit electrons to generate an arc plasma, and a repeller configured to repell electrons back into the arc plasma. The ion source chamber and cathode may comprise a refractory metal. The ion source chamber further includes a gas source configured to provide a halogen species to the ion source chamber. The reactive insert is interoperative with the halogen species to yield a first etch rate of the refractory metal material within the ion source chamber under a first set of operating conditions that is less than a second etch rate of the refractory metal material within the ion source chamber under the first set of operating conditions when the reactive insert is not disposed within the ion source chamber. | 11-06-2014 |
Patent application number | Description | Published |
20090166555 | RF electron source for ionizing gas clusters - The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants. | 07-02-2009 |
20090242793 | Flexible ion source - Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level. | 10-01-2009 |
20100155600 | METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT - An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process. | 06-24-2010 |
20110034014 | COLD IMPLANT FOR OPTIMIZED SILICIDE FORMATION - A method of applying a silicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or “piping” is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at cold temperatures, such as below 0° C. This cold implant reduces the structural damage caused by the impacting ions. Subsequently, a silicide layer is applied, and due to the reduced structural damage, metal diffusion and piping into the substrate is lessened. In some embodiments, an amorphization implant is performed after the implantation of dopants, but prior to the application of the silicide. By performing this pre-silicide implant at cold temperatures, similar results can be obtained. | 02-10-2011 |
Patent application number | Description | Published |
20080294031 | METHOD AND DEVICE FOR QUICK PRESS ON EEG ELECTRODE - Embodiments relate to methods and systems for monitoring bioelectric potentials. In some instances, an electrode is applied to a patient's skin. The electrode may be at least partly inserted into the patient's skin, such as by inserting at least part of one or more teeth underneath the skin. | 11-27-2008 |
20120136230 | METHOD AND DEVICE FOR QUICK PRESS ON EEG ELECTRODE - Embodiments relate to methods and systems for monitoring bioelectric potentials. In some instances, an electrode is applied to a patient's skin. The electrode may be at least partly inserted into the patient's skin, such as by inserting at least part of one or more teeth underneath the skin. | 05-31-2012 |
20120232372 | METHOD AND DEVICE FOR QUICK PRESS ON EEG ELECTRODE - Embodiments relate to methods and systems for monitoring bioelectric potentials. In some instances, an electrode is applied to a patient's skin. The electrode may be at least partly inserted into the patient's skin, such as by inserting at least part of one or more teeth underneath the skin. | 09-13-2012 |
20120330125 | Method And Device For Quick Press On EEG Electrode - Embodiments relate to methods and systems for monitoring bioelectric potentials. In some instances, an electrode is applied to a patient's skin. The electrode may be at least partly inserted into the patient's skin, such as by inserting at least part of one or more teeth underneath the skin. | 12-27-2012 |
20130072809 | Method And System For Analyzing An EEG Recording - A method and system for analyzing EEG data is disclosed herein. A processed EEG recording is analyzed to produce a parameter for the EEG. The EEG is analyzed to organize a plurality of detections by spike focus, to determine a relative frequency based on a count of detections by spike focus, to average a plurality of detections by spike focus, and the like. | 03-21-2013 |
20130138009 | Method And System For Displaying EEG Data - A method and system for displaying EEG data is disclosed herein. A plurality of epochs are stitched together with an overlapping section in order to present a continuous EEG recording. Artifact reduction is performed on the epochs and then the epochs are combined together with overlapping sections of preferably two to four seconds. | 05-30-2013 |
20140012151 | Method And System For Displaying EEG Data - A method and system for displaying EEG data is disclosed herein. A processed EEG report is overlayed on an original EEG report to generate a combined EEG report, wherein an x-axis of the processed EEG report is aligned with an x-axis of the original EEG report, and wherein a y-axis of the processed EEG report is aligned with an y-axis of the original EEG report. The combined EEG report is displayed wherein the processed EEG report is visually distinctive from the original EEG report. | 01-09-2014 |
Patent application number | Description | Published |
20130138010 | User Interface For Artifact Removal In An EEG - A method and system for a user interface for artifact removal in an EEG is disclosed herein. The invention allows an operator to select a plurality of artifacts to be automatically removed from an EEG recording using a user interface. The operator pushes a button on the user interface to apply a plurality of filters to remove the plurality of artifacts from the EEG and generate a clean EEG for viewing. | 05-30-2013 |
20130138356 | Method And System For Detecting And Removing EEG Artifacts - A method and system for detecting and removing EEG artifacts is disclosed herein. Each source of a plurality of sources for an EEG signal is separated for a selected artifact type. Each source of the plurality of sources is reconstituted into a recorded montage and an optimal reference montage for recognizing the selected artifact type of each source. The sources with artifacts are removed and the remaining sources are reconstituted into a filtered montage for the EEG signal. | 05-30-2013 |
20130231545 | Method And Device For Quick Press On EEG Electrode - Embodiments relate to methods and systems for monitoring bioelectric potentials. In some instances, an electrode is applied to a patient's skin. The electrode may be at least partly inserted into the patient's skin, such as by inserting at least part of one or more teeth underneath the skin. | 09-05-2013 |
20140135643 | Method And System For Displaying Data - A method and system for displaying data is disclosed herein. A plurality of epochs are stitched together with an overlapping section in order to present a continuous EEG recording. Artifact reduction is performed on the epochs and then the epochs are combined together with overlapping sections of preferably two to four seconds. | 05-15-2014 |
20140148723 | Method And System For Displaying The Amount Of Artifact Present In An EEG Recording - A system and method to display in graphical form the amount of artifact present in an EEG record is disclosed herein. Displaying in graphical form the amount of artifact present in an EEG record allows a reviewer of the EEG recording to see how much muscle and eye movement is present in the EEG record. | 05-29-2014 |
20140194768 | Method And System To Calculate qEEG - A system and method for calculating a quantitative EEG is disclosed herein. The present invention achieves a level of artifact reduction that the QEEG is now practical on a continuous monitoring basis since artifact reduction is continuously applied to an EEG recording. | 07-10-2014 |
20140194769 | Multiple Patient EEG Monitoring - A system and method for multiple EEG acquisition and monitoring is disclosed herein. The system includes multiple EEG machines connected to a central station over a network. Each EEG machine of the multiple EEG machines has a separate cell on a screen page to allow for an operator to monitor each of the EEG machines. | 07-10-2014 |