Patent application number | Description | Published |
20110012110 | SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A gallium nitride based field effect transistor having good current hysteresis characteristics in which forward gate leakage can be reduced. In a gallium nitride-based field effect transistor ( | 01-20-2011 |
20110042719 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - It is an objective of the present invention to increase channel current density while allowing a GaN field effect transistor to perform normally-off operation. | 02-24-2011 |
20110108885 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - The object of the present invention is to increase channel current density while a GaN-based field effect transistor operates in a normally-off mode. Provided is a semiconductor device comprising a group 3-5 compound semiconductor channel layer containing nitrogen, an electron supply layer that supplies electrons to the channel layer, a semiconductor layer that is formed on a side of the electron supply layer opposite the side facing the channel layer and that is an intrinsic or n-type group 3-5 compound semiconductor containing nitrogen, and a control electrode that is formed to contact the semiconductor layer or formed with an intermediate layer interposed between itself and the semiconductor layer. | 05-12-2011 |
20120086044 | LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE - There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed. | 04-12-2012 |
20120280275 | SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER - Provided is a semiconductor wafer including: a base wafer whose surface is made of a silicon crystal: a Si | 11-08-2012 |
Patent application number | Description | Published |
20100084742 | Method for manufacturing semiconductor epitaxial crystal substrate - The present invention provides a method for manufacturing a gallium nitride semiconductor epitaxial crystal substrate with a dielectric film which has a low gate leak current and negligibly low gate lag, drain lag, and current collapse characteristics. The method for manufacturing a semiconductor epitaxial crystal substrate is a method for manufacturing a semiconductor epitaxial crystal substrate in which a dielectric layer of a nitride dielectric material or an oxide dielectric material in an amorphous form functioning as a passivation film or a gate insulator is provided on a surface of a nitride semiconductor crystal layer grown by metal organic chemical vapor deposition. In the method, after the nitride semiconductor crystal layer is grown in an epitaxial growth chamber, the dielectric layer is grown on the nitride semiconductor crystal layer in the epitaxial growth chamber. | 04-08-2010 |
20100117094 | GALLIUM NITRIDE EPITAXIAL CRYSTAL, METHOD FOR PRODUCTION THEREOF, AND FIELD EFFECT TRANSISTOR - The present invention provides a gallium nitride type epitaxial crystal, a method for producing the crystal, and a field effect transistor using the crystal. The gallium nitride type epitaxial crystal comprises a base substrate and the following (a) to (e), wherein a connection layer comprising a gallium nitride type crystal is arranged in an opening of the non-gallium nitride type insulating layer to electrically connect the first buffer layer and the p-conductive type semiconductor crystal layer. (a) a gate layer, (b) a high purity first buffer layer containing a channel layer contacting an interface on the base substrate side of the gate layer, (c) a second buffer layer arranged on the base substrate side of the first buffer layer, (d) a non-gallium nitride type insulating layer arranged on the base substrate side of the second buffer layer, and having the opening at a part thereof, and (e) a p-conductive type semiconductor crystal layer arranged on the base substrate side of the insulating layer. | 05-13-2010 |
20100207137 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, HIGH CARRIER MOBILITY TRANSISTOR AND LIGHT EMITTING DEVICE - Provided are a semiconductor device, a semiconductor device manufacturing method, a high carrier mobility transistor and a light emitting device. The semiconductor device is provided with a semiconductor layer including N and Ga, a conductive layer ohmic-connected to the semiconductor layer, a metal-distributed region where metal exists by being distributed at an interface between the semiconductor layer and the conductive layer, and a metal intrusion region where the atoms of the metal exist by entering the semiconductor layer. | 08-19-2010 |
20120228627 | METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND SEMICONDUCTOR WAFER - A method for producing a compound semiconductor crystal, includes; a sacrificial layer formation step of forming a sacrificial layer containing C | 09-13-2012 |
20120292789 | SEMICONDUCTOR WAFER AND METHOD OF PRODUCING THE SAME - Provided is a method of producing a semiconductor wafer. The method includes forming an alignment mark on a base wafer, forming, on the base wafer in a region that includes the alignment mark, an inhibition layer for inhibiting crystal growth after forming the alignment mark, forming, in a region of the inhibition layer where no alignment mark is provided, an opening in which the base wafer is exposed, on the basis of information that indicates a location where the opening is to be formed with reference to the position of the alignment mark, and growing a semiconductor crystal inside the opening. | 11-22-2012 |
20160079386 | SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER AND ELECTRONIC DEVICE - To provide a semiconductor wafer having a wafer, a compound semiconductor layer, a first insulating layer and a second insulating layer, wherein in the depth direction, oxygen atoms and nitrogen atoms are continuously distributed, the number of the nitrogen atoms along the depth direction shows its maximum in the first insulating layer, the total number of third atoms and fourth atoms along the depth direction becomes the largest in the compound semiconductor layer, the number of the oxygen atoms at the interface between the compound semiconductor layer and the first insulating layer is smaller than the number of the oxygen atoms at the interface between the first insulating layer and the second insulating layer. | 03-17-2016 |
Patent application number | Description | Published |
20080201581 | Method and apparatus for storing data - According to an aspect of an embodiment, a method comprises providing a matrix comprising m rows and n columns, each of the rows and columns comprising elements of zero and one, dividing data into n data blocks, associating each of the data blocks with each of the columns, calculating an exclusive-OR of selected data blocks in reference to one of the rows, the selected data blocks being determined by the element of one in the associated columns in the one of the rows, repeating the calculating in other rows and storing separately the calculated data resulting from the exclusive-OR of data blocks in association with the associated rows, respectively. | 08-21-2008 |
20090138253 | HARNESS DESIGN APPARATUS - First, the position and the length of a harness are set. Next, a shape setting function having an unknown variable that minimizes potential energy as a binding position is generated, and a position of the minimum potential energy at a bending position is calculated in the Lagrange Multiplier Method. The position of the minimum potential energy obtained by the Lagrange Multiplier Method is the optimum binding position. | 05-28-2009 |
20110273528 | Simulation program, simulation device, and simulation method - A simulation device includes a captured image generating unit that generates a captured image captured by an imaging unit disposed virtually at a predetermined view point in a 3D model, the captured image being generated by using the data of the 3D model, a dividing unit that divides the generated captured image into image regions in a predetermined polygonal shape, a computing unit that computes curvatures of the image regions based on the data thereof, an adjusting unit that adjusts sizes of mesh elements on a virtual plane disposed virtually at a predetermined distance from the view point, each of the sizes of the plurality of mesh elements being adjusted by using corresponding each one of the computed curvatures of the image regions, and a wide-angle image generating unit that generates a wide-angle image imaged through a wide-angle lens used in the imaging unit by applying aberration data of the wide-angle lens to the captured image generated in the captured image generating unit according to the adjusted sizes of the mesh elements on the virtual plane. | 11-10-2011 |
Patent application number | Description | Published |
20120293628 | CAMERA INSTALLATION POSITION EVALUATING METHOD AND SYSTEM - A camera installation position evaluating system includes a processor, the processor executing a process including setting a virtual plane orthogonal to the optic axis of a camera mounted on a camera mounted object, generating virtually a camera image to be captured by the camera, with use of data about a three-dimensional model of the camera mounted object, data about the virtual plane set by the setting and parameters of the camera, and computing a boundary between an area of the three-dimensional model of the camera mounted object and an area of the virtual plane set by the setting, on the camera image generated by the generating. Accordingly, the camera installation position evaluating system is able to quantitatively obtain the camera's view range at the present camera installation position based on the computed boundary. | 11-22-2012 |
20130083057 | INSTALLING OPERATION SUPPORT DEVICE AND METHOD - A system stores identification information for identification of a part associated with installation information for designation of a position where the part is installed in a first apparatus; receives the identification information about the part to be read and transmits it by a second apparatus; and retrieves the received identification information from the storage unit, and generates a first composite image by combining installation information corresponding to the retrieved identification information with an image of the first apparatus. | 04-04-2013 |
20140068081 | TRANSFER DEVICE, AND TRANSFER METHOD - A transfer device allocates, within the range of the maximum communication band of a network that a plurality of groups of applications use in common, a communication band equal to or larger than the minimum band for each of the groups. Furthermore, the transfer device converts, within a communication band allocated to each group, TCP data received from a transmission source of data to UDP data, transfers the UDP data to a transmission destination, and retransmits retransmission data in response to a retransmission request of the UDP data. | 03-06-2014 |
20140071993 | TRANSFER DEVICE AND TRANSFER METHOD - A transfer device increments a value of a phase ID at predetermined time intervals, and registers a packet ID of a transmitted data packet and a phase ID on a determination table in an associated manner. When having received a response packet from a receiving-side transfer device, the transfer device determines an unarrived packet on the basis of received packet IDs contained in the received response packet and packet IDs of transmitted data packets. Then, the transfer device determines whether a data packet corresponding to the unarrived packet is lost or on-the-fly from a relationship between a phase ID of the unarrived packet and the maximum phase contained in the received response packet, and retransmits the corresponding data packet only if it is lost. | 03-13-2014 |
20150026299 | IMAGE TRANSMITTING METHOD, PROGRAM AND APPARATUS - An image transmitting method is used to transmit image data from an image transmitting apparatus to an image receiving apparatus. The image transmitting device receives operation events generated in the image receiving device through a network. The image transmitting apparatus calculates a determination time of the image data, in a transmission control based on a previously determined transmission interval, based on an amount of the image data to be transmitted to the image receiving apparatus, information regarding the network through which the image data is transmitted, and a number of the operation events that have been received from an immediately previous transmission time until a time of transmitting the image data. The image transmitting apparatus compares the determination time with a transmission time indicating a time of transmitting the image data, and prevents a transmission of the image data when the determination time is later than the transmission time. | 01-22-2015 |
20150349930 | COMMUNICATION METHOD AND COMMUNICATION APPARATUS - A network includes first through third communication apparatuses. The second communication apparatus identifies, from packets received from the first communication apparatus, forwarding packets that are packets to be transmitted to the third communication apparatus, and measures the interval in receiving the forwarding packets. The second communication apparatus forwards the forwarding packets to the third communication apparatus. The second communication apparatus receives report information that reports the reception state of forwarding packets from the third communication apparatus, and uses the report information to select target packets that are packets for which success of reception has not been reported from the third communication apparatus in the packets that were forwarded to the third communication apparatus. When the interval in receiving forwarding packets from the first communication apparatus exceeds a threshold, the second communication apparatus retransmits the target packets to the third communication apparatus in a format available for error correction. | 12-03-2015 |
20160127213 | INFORMATION PROCESSING DEVICE AND METHOD - A method includes calculating a size of a buffer included in a client device by multiplying a band by a round trip time, calculating an integer value by turning a real number into an integer, and setting the integer value as an unused size, the real number being obtained by dividing the size by a transmission data size, setting a value obtained by dividing the round trip time by the integer value or a value obtained by dividing the transmission data size by the band as a transmission interval, generating image data of a screen of a remote desktop and transmitting the image data to the client device when the unused size is greater than the first value, and subtracting a second value from the unused size, and every time a response to the image data is received, adding the second value to the unused size. | 05-05-2016 |