Patent application number | Description | Published |
20090102027 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPLIANCE - An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced. | 04-23-2009 |
20100071767 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side. | 03-25-2010 |
20100151664 | Method of Manufacturing a Semiconductor Device - At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber. | 06-17-2010 |
20110034215 | Semiconductor Device and Method for Manufacturing the Same - An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si. | 02-10-2011 |
20120033156 | Liquid Crystal Display Device - A liquid crystal display device which includes a pair of substrates, a pixel including a liquid crystal element between the pair of substrates, a lighting portion provided on the outer side of the pair of substrates, a first polarizing member between the pair of substrates and the lighting portion, a reflective member provided outside the lightning portion, a second polarizing member on a side opposite to the first polarizing member with the pair of substrates provided therebetween, and a first optical sensor and a second optical sensor. The first optical sensor has a function of detecting illuminance of external light, and the second optical sensor has a function of detecting a color tone of polarized light emitted from the pixel portion. The lightning portion can emits light having a predetermined wavelength depending on the color tone of the pixel portion which is detected by the second optical sensor. | 02-09-2012 |
20120187411 | Semiconductor Device and Method for Manufacturing the Same - An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si. | 07-26-2012 |
20130059404 | Method of Manufacturing A Semiconductor Device - At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber. | 03-07-2013 |
20140139776 | Semiconductor Device and Method for Manufacturing the Same - An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si. | 05-22-2014 |