| Patent application number | Description | Published |
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| 20080237997 | METAL GASKET - The present invention provides a metal gasket to be fitted between a cylinder head and a cylinder block to seal a gap between the surfaces thereof, which comprises: a thin metal plate with an opening formed at a position corresponding to a bore portion of the cylinder block, the opening having a diameter larger than that of the bore portion; and a pair of elastic metal substrates each having: an opening which substantially agrees with the bore portion of the cylinder block; an annular convex portion formed concentrically with the opening at a position apart from an edge portion of the opening by a specified distance; and an annular holding portion for holding a peripheral portion of the opening of the thin metal plate, horizontally extending out from an outer edge portion of the convex portion, wherein the pair of the elastic metal substrates are disposed so that top portions of the respective convex portions face each other and that the holding portions overlap with the thin metal plate, and engaged to the thin metal plate at a plurality of positions. | 10-02-2008 |
| 20090239324 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SEPARABLE SUPPORT BODY - In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer. | 09-24-2009 |
| 20090280389 | Fuel Cell Separator and Manufacturing Method Thereof - This invention provides a low cost fuel cell separator which reduces a contact resistance between a gas diffusion layer and the separator, has the capability of saving thickness as well as erosion resistance and mechanical strength. It is a feature of this invention that when the fuel cell separator has “chases A” | 11-12-2009 |
| 20090289717 | RADIO FREQUENCY (RF) POWER AMPLIFIER AND RF POWER AMPLIFIER APPARATUS - An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification. | 11-26-2009 |
| 20090316262 | TRANSMISSION TYPE POLARIZING ELEMENT, AND COMPOSITE POLARIZING PLATE USING THE ELEMENT - A transmission type polarizing element | 12-24-2009 |
| 20100059781 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - In an exemplary embodiment of the invention, a semiconductor light-emitting element includes a first semiconductor layer having a first conduction type, a second semiconductor layer having a second conduction type, an active layer provided between the first and second semiconductor layers. The semiconductor light-emitting element also includes a polarity inversion layer provided on the second semiconductor layer, and a third semiconductor layer provided on the polarity inversion layer. The third semiconductor layer has the second conduction type. The crystal orientations of the first through third semiconductor layers are inverted, with the polarity inversion layer serving as a boundary. The first and third semiconductor layers have uppermost surfaces that are made from polar faces having common constitutional elements. Hexagonal conical protrusions arising from a crystal structure are formed at the outermost surfaces of the first and third semiconductor layers. The first through third semiconductor layers are made from a wurtzite-structure group III nitride semiconductor, and are layered along the C-axis direction of the crystal structure. In another embodiment, the polar faces may be made from nitrogen atoms. The hexagonal conical protrusions may be formed by wet etching. | 03-11-2010 |
| 20100090767 | RF AMPLIFICATION DEVICE - An RF amplification device has amplification elements which amplify a radio frequency input signal in wireless radio communication. Transmission line transformers are coupled to one of an input electrode and an output electrode of the amplification elements and have a main line Lout arranged between the input and the output, and a sub line Lin | 04-15-2010 |
| 20100102887 | ELECTRONIC COMPONENT FOR HIGH FREQUENCY POWER AMPLIFICATION - An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power. | 04-29-2010 |
| 20100117115 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure. | 05-13-2010 |
| 20100120036 | METHOD FOR AMPLIFYING DNA FRAGMENT - To measure the methylation degree of a genomic DNA simply and correctly as well as exhaustively, there is provided a method for amplifying a DNA fragment, characterized by comprising the following steps (1) to (5):
| 05-13-2010 |
| 20100129538 | PROCESS FOR PRODUCING MAGNET - The invention provides a process for producing a magnet that not only allows satisfactory Br and HcJ values to be achieved but can also yield a magnet with a sufficiently large squareness ratio. The process for producing a magnet according to the invention is characterized by comprising a first step in which a heavy rare earth compound containing a heavy rare earth element is adhered onto a rare earth magnet sintered compact, and a second step in which the heavy rare earth compound-adhered sintered compact is subjected to heat treatment. The heavy rare earth compound is a hydride of the heavy rare earth element. | 05-27-2010 |
| 20100201447 | Radio-frequency circuit - A radio-frequency circuit comprises a low-noise amplifier, an NMOS mixer for converting a radio-frequency signal output from the low-noise amplifier into an intermediate-frequency signal, a polyphase filter for removing image noises, and a PMOS mixer for converting the intermediate-frequency signal passed through the polyphase filter into a baseband signal. | 08-12-2010 |
| 20100301935 | BIAS CIRCUIT, HIGH-POWER AMPLIFIER, AND PORTABLE INFORMATION TERMINAL - To provide a bias circuit for gain control that can reduce gain variation at low-power output, facilitate setting of output power, and is unlikely to be affected by variation in element values and variations among products. Use in an HPA having three bias circuits serially-connected is assumed. Current of the third bias circuit is varied with a square-law characteristic. The square-law characteristic is amplified by a buffer amplifier including a linear amplifier and a peripheral circuit thereof. Output current of the third bias circuit varies depending on a current drivability coefficient of the diode-connected FET branched from the connection point between a constant current source and the linear amplifier. The output current of the third bias circuit is controlled by providing a circuit that draws a certain amount of current from the current flowing in the FET. | 12-02-2010 |
| 20110016191 | E-MAIL RECEIVING DEVICE, NETWORK SERVER, AND EXPIRATION MANAGEMENT METHOD FOR RECEIVED E-MAIL - A mail receiver includes: a mail receiving unit that receives a mail to which an attached file and a reference time limit of the attached file are appended; a monitoring unit that monitors whether the attached file was referred to by a user; and a warning unit that warns the user of one which the reference time limit is approaching among a non-referenced attached file. | 01-20-2011 |
| 20110062484 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode. | 03-17-2011 |
| 20110095827 | RADIO FREQUENCY (RF) POWER AMPLIFIER AND RF POWER AMPLIFIER APPARATUS - An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification. | 04-28-2011 |
| 20110156087 | FACE-UP OPTICAL SEMICONDUCTOR DEVICE AND METHOD - A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or most of the remaining p-type GaN layer. A p-side electrode including a pad portion and auxiliary electrode portions can be formed on the transparent electrode layer. An n-side electrode can be formed on the exposed n-type GaN layer. On regions of the transparent electrode layer where weak light emission regions may be formed, outside independent electrodes can be provided. They can be disposed on concentric circles with the n-side electrode as a center or tangent lines thereof so as to be along the circles or the tangent lines. The outside independent electrodes can diffuse current from the p-side electrode to the n-side electrode flowing through the transparent electrode layer into the short side end portions of the transparent electrode layer, thereby decreasing the weak light emission regions. | 06-30-2011 |
