Patent application number | Description | Published |
20100118227 | LIQUID CYSTAL DISPLAY PANEL WITH MICROLENS ARRAY AND METHOD FOR MANUFACTURING THE SAME - A highly reliable liquid crystal display panel is provided in which problems such as mixing of foreign matter are prevented. | 05-13-2010 |
20100283941 | LIQUID CRYSTAL DISPLAY PANEL, LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD OF LIQUID CRYSTAL DISPLAY PANEL - A vertically aligned type liquid crystal display panel with wide viewing angles and high display quality can be provided with high production efficiency. | 11-11-2010 |
20110304801 | LIQUID CRYSTAL DISPLAY PANEL - A rear-side polarizing plate | 12-15-2011 |
20130011950 | METHOD OF MANUFACTURING INFRARED LIGHT-EMITTING ELEMENT - To provide a method of manufacturing an infrared light-emitting element having a wavelength of 1.57 μm, including: forming a SiO | 01-10-2013 |
20140113180 | SECONDARY CELL, SOLAR SECONDARY CELL, AND METHODS OF MAKING THOSE CELLS - An embodiment of the present disclosure provides a structure that contributes to increasing the capacity density. A secondary cell according to an embodiment of the present disclosure includes a plurality of periodic unit structures that are arranged on a first surface. Each of those periodic unit structures includes a positive electrode layer and a negative electrode layer, each of which projects away from the first surface, and a solid electrolyte interposed between the positive electrode and negative electrode layers. | 04-24-2014 |
20140168572 | PHOSPHOR SUBSTRATE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A phosphor substrate ( | 06-19-2014 |
20140273328 | SEMICONDUCTOR ELEMENT PRODUCING METHOD - A semiconductor device is fabricated by performing the steps of: (a) implanting dopant ions into a semiconductor base member, which is made of single-crystal Si, to define at least one of an n-type region and a p-type region in the semiconductor base member; (b) conducting a first heat treatment on the semiconductor base member, in which the n-type or p-type region has been defined, at a temperature rise/fall rate of 40° C./sec or more and with the highest temperature to reach set within the range of 1000° C. to 1200° C.; and (c) conducting a second heat treatment on the semiconductor base member, which has gone through the first heat treatment, at a lower temperature rise/fall rate than in the first heat treatment. | 09-18-2014 |
20140368766 | DISPLAY ELEMENT - A display element includes: a light source; a phosphor layer configured to absorb light from the light source as excitation light and generate light in a wavelength region different from a wavelength region of the light source; a functional optical film configured to reflect the light emitted from the phosphor layer; and a light extraction structure having a function of emitting the light emitted from the phosphor layer to a non-light source, wherein the functional optical film is a band pass filter formed of a dielectric multilayer film, and a low refractive index layer is provided between the phosphor layer and the band pass filter, the low refractive index layer having a refractive index lower than those of the phosphor layer and a medium of band pass filter. | 12-18-2014 |