Patent application number | Description | Published |
20080251792 | Luminescent device and process of manufacturing the same - In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. | 10-16-2008 |
20090004822 | Semiconductor substrate, manufacturing method of semiconductor substrate, and semiconductor device and electronic device using the same - A method of manufacturing a semiconductor substrate is demonstrated, which enables the formation of a single crystal semiconductor layer on a substrate having an insulating surface. The manufacturing method includes the steps of: ion irradiation of a surface of a single-crystal semiconductor substrate to form a damaged region; laser light irradiation of the single-crystal semiconductor substrate; formation of an insulating layer on the surface of the single-crystal semiconductor substrate; bonding the insulating layer with a substrate having an insulating surface; separation of the single-crystal semiconductor substrate at the damaged region, resulting in a thin single-crystal semiconductor layer on the surface of the substrate having the insulating surface; and laser light irradiation of the surface of the single-crystal semiconductor layer which is formed on the substrate having the insulating surface. This method allows the production of a thin layer of a single-crystal semiconductor with uniformed characteristics on an insulating surface. | 01-01-2009 |
20090098720 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×10 | 04-16-2009 |
20090140270 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF - An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used. | 06-04-2009 |
20090269873 | LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal device comprising:
| 10-29-2009 |
20090284701 | LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal device comprising:
| 11-19-2009 |
20100085527 | LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal device comprising:
| 04-08-2010 |
20100264421 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 10-21-2010 |
20110049633 | LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THEREOF AND ELECTRONIC APPLIANCE - An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor. | 03-03-2011 |
20110065004 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to increase the amount of ions capable of leaving and entering an active material so as to increase capacity of a secondary battery. The present invention relates to a manufacturing method of a power storage device including a positive electrode active material formed using a composite oxide containing at least alkali metal and transition metal. The method includes the steps of: forming a base layer over a support substrate; forming a layer of lithium iron phosphate or a layer of sodium iron phosphate over the base layer; and using a layer of single crystalline lithium iron phosphate having an olivine structure or a layer of single crystalline sodium iron phosphate having an olivine structure with crystal axes oriented in a <010> direction as the positive electrode material by converting the layer of lithium iron phosphate or the layer of sodium iron phosphate by a heat treatment. | 03-17-2011 |
20110236754 | SECONDARY BATTERY AND METHOD FOR FORMING ELECTRODE OF SECONDARY BATTERY - An object is to provide a secondary battery having excellent charge-discharge cycle characteristics. A secondary battery including an electrode containing silicon or a silicon compound is provided, in which the electrode is provided with a layer containing silicon or a silicon compound over a layer of a metal material; a mixed layer of the metal material and the silicon is provided between the metal material layer and the layer containing silicon or a silicon compound; the metal material has higher oxygen affinity than that of ions which give and receive electric charges in the secondary battery; and an oxide of the metal material does not have an insulating property. The ions which give and receive electric charges are alkali metal ions or alkaline earth metal ions. | 09-29-2011 |
20110254128 | ELECTRODE FOR ENERGY STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large capacity and high endurance can be provided. In an electrode of an energy storage device in which an active material is formed over a current collector, the surface of the active material is formed of a crystalline semiconductor film having a { | 10-20-2011 |
20110300445 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion. | 12-08-2011 |
20110315969 | LUMINESCENT DEVICE AND PROCESS OF MANUFACTURING THE SAME - In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used. | 12-29-2011 |
20120007095 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 01-12-2012 |
20120182208 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THEREOF - An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used. | 07-19-2012 |
20120228622 | LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THEREOF AND ELECTRONIC APPLIANCE - An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor. | 09-13-2012 |
20120248470 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed. | 10-04-2012 |
20130001568 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 01-03-2013 |
20130001583 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 01-03-2013 |
20130134401 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE - It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished. | 05-30-2013 |
20130228784 | LUMINESCENT DEVICE AND PROCESS OF MANUFACTURING THE SAME - In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used. | 09-05-2013 |
20140160385 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 06-12-2014 |
20140332819 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed. | 11-13-2014 |
20140346489 | LUMINESCENT DEVICE AND PROCESS OF MANUFACTURING THE SAME - In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used. | 11-27-2014 |