Patent application number | Description | Published |
20080277710 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME - Provided are semiconductor devices and methods of forming the same. In the semiconductor devices and methods of forming the same, different insulating patterns are disposed around a cell gate pattern and a peripheral gate pattern to impose different heat budgets around the cell gate pattern and the peripheral gate pattern. For this purpose, a semiconductor substrate having a cell array region and a peripheral circuit region is prepared. First and second cell gate patterns are disposed in the cell array region. A peripheral gate pattern is disposed in the peripheral circuit region to be adjacent to the second cell gate pattern. Buried insulating patterns are disposed around the first and second cell gate patterns. Planarization insulating patterns are disposed around the peripheral gate pattern. | 11-13-2008 |
20110076829 | Semiconductor Devices and Methods of Forming the Same - Provided are semiconductor devices and methods of forming the same. In the semiconductor devices and methods of forming the same, different insulating patterns are disposed around a cell gate pattern and a peripheral gate pattern to impose different heat budgets around the cell gate pattern and the peripheral gate pattern. For this purpose, a semiconductor substrate having a cell array region and a peripheral circuit region is prepared. First and second cell gate patterns are disposed in the cell array region. A peripheral gate pattern is disposed in the peripheral circuit region to be to adjacent to the second cell gate pattern. Buried insulating patterns are disposed around the first and second cell gate patterns. Planarization insulating patterns are disposed around the peripheral gate pattern. | 03-31-2011 |
20110108962 | SEMICONDUCTOR DEVICE HAVING A DEVICE ISOLATION STRUCTURE - An example semiconductor device includes a trench formed in a semiconductor substrate to define an active region, a filling dielectric layer provided within the trench, an oxide layer provided between the filling dielectric layer and the trench, a nitride layer provided between the oxide layer and the filling dielectric layer, and a barrier layer provided between the oxide layer and the nitride layer. | 05-12-2011 |
20110170344 | SEMICONDUCTOR DEVICE INCLUDING SUB WORD LINE DRIVER - A semiconductor device includes a sub word line driver. A first sub word line and a second sub word line transmit an operation signal to a memory cell. A main word line optionally sends the operation signal to the first sub word line and the second sub word line. A switching transistor is disposed between the first sub word line and the second sub word line. A gate of the switching transistor is connected the main word line. | 07-14-2011 |
20110198700 | SEMICONDUCTOR DEVICES WITH PERIPHERAL REGION INSERTION PATTERNS AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a substrate including a memory cell region and a peripheral region and a field pattern including an insulating region disposed on a nitride liner in a trench in the substrate adjacent an active region. The field pattern and the active region extend in parallel through the cell and peripheral regions. The device also includes a transistor in the peripheral region including a source/drain region in the active region. The device further includes an insertion pattern including an elongate conductive region disposed in the substrate and extending along a boundary between the field pattern and the active region in the peripheral region. Fabrication methods are also described. | 08-18-2011 |
20110241099 | SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR AND FUSE CIRCUIT AND SEMICONDUCTOR MODULE INCLUDING THE SAME - A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a first node impurity region, a second node impurity region, a third node impurity region, and an insulating layer. The first through third node impurity regions are disposed in the semiconductor substrate. Each of the first through third node impurity regions has a longitudinal length, a transverse length and a thickness respectively corresponding to first through third directions, which are perpendicular with respect to each other. The first node impurity region is parallel to the second and third node impurity regions, which are disposed in the substantially same line. The insulating layer is located between the first through third node impurity regions in the semiconductor substrate. | 10-06-2011 |
20120001271 | GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS - A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction. | 01-05-2012 |
20120142160 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING DEUTERIUM ANNEALING - A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate;forming a gate electrode on the gate dielectric layer;forming an etch stop layer on the gate electrode;forming a capacitor on the semiconductor substrate adjacent to the gate electrode;after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode;and, diffusing deuterium into the gate dielectric layer through the contact hole. | 06-07-2012 |
20120153404 | ANTI-FUSE DEVICE AND SEMICONDUCTOR DEVICE AND SYSTEM INCLUDING THE SAME - An anti-fuse device includes a gate electrode on a semiconductor substrate, a gate insulating layer between the semiconductor substrate and the gate electrode, junction regions in the semiconductor substrate adjacent the gate electrode, and at least one anti-breakdown material layer between the junction regions, the gate insulating layer being between the gate electrode and the anti-breakdown material layer. | 06-21-2012 |
20120280310 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including an isolation layer structure including a doped polysilicon layer pattern doped with first and second impurities of first and second conductivity types at lower and upper portions thereof, the doped polysilicon layer pattern being on an inner wall of a first trench on a substrate including an active region in which the first trench is not formed and a field region including the first trench, and an insulation structure filling a remaining portion of the first trench; a gate structure on the active region; a well region at a portion of the active region adjacent to lower portions of the doped polysilicon layer pattern and being doped with third impurities of the second conductivity type; and a source/drain at a portion of the active region adjacent to upper portions of the doped polysilicon layer pattern and being doped with fourth impurities of the first conductivity type. | 11-08-2012 |
20130248980 | CAPACITORLESS MEMORY DEVICE - According to an example embodiment of inventive concepts, a capacitorless memory device includes a capacitorless memory cell that includes a bit line on a substrate; a read transistor, and a write transistor. The read transistor may include first to third impurity layers stacked in a vertical direction on the bit line. The first and third layers may be a first conductive type, and the second impurity layer may be a second conductive type that differs from the first conductive type. The write transistor may include a source layer, a body layer, and a drain layer stacked in the vertical direction on the substrate, and a gate line that is adjacent to a side surface of the body layer. The gate line may be spaced apart from the side surface of the body layer. The source layer may be adjacent to a side surface of the second impurity layer. | 09-26-2013 |
20130256770 | TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MODULE INCLUDING THE SAME - A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region. | 10-03-2013 |
20130256774 | SEMICONDUCTOR MEMORY DEVICES - Semiconductor memory devices may include a write transistor including a first write gate controlling a first source/drain terminal and a second write gate controlling a channel region, and a read transistor including a memory node gate connected to the first source/drain terminal of the write transistor. The first write gate may have a first work function and the second write gate may have a second work function different from the first work function. The first source/drain terminal of the write transistor may not have a PN junction. | 10-03-2013 |
20130279275 | SEMICONDUCTOR DEVICE - A semiconductor memory device includes a bit line connected to a memory cell; an input/output line configured to input a data signal to the memory cell during a writing operation and to output a data signal stored in the memory cell during a reading operation; and a column select transistor including a first source/drain connected to the bit line and a second source/drain connected to the input/output line, wherein a resistance of the first source/drain is smaller than a resistance of the second source/drain. | 10-24-2013 |
20140353768 | GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS - A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction. | 12-04-2014 |
20140369110 | SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR PACKAGE - A semiconductor memory device includes: a memory unit including a first memory sub region including a first memory cell and a second memory sub region including a second memory cell; a temperature information obtaining unit that obtains temperature information; a temperature estimation unit that estimates a first temperature of the first memory sub region and a second temperature of the second memory sub region based on the temperature information; a first sub region control unit that controls the first memory sub region based on the first temperature; and a second sub region control unit that controls the second memory sub region based on the second temperature. | 12-18-2014 |
Patent application number | Description | Published |
20110260821 | COIL COMPONENT - A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part of the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core. | 10-27-2011 |
20120268232 | COIL COMPONENT, POWDER-COMPACTED INDUCTOR AND WINDING METHOD FOR COIL COMPONENT - A coil component includes an air-core winding wire portion wound by a wire with a plurality of wound layers by alignment winding, a spiral shaped wound portion in which the wire wound in a spiral shape from an inner edge of an end surface toward an outer edge thereof along the end surface while in contact with the end surface on one side in the axis direction of the winding wire portion, a first lead portion extended and extracted outward from a winding first end point of the spiral shaped wound portion, and a second lead portion extended and extracted outward from a winding second end point at the outer circumference of the winding wire portion. | 10-25-2012 |
20130154780 | COIL COMPONENT - A coil component including: a magnetic core which is formed by a magnetic material and which has a top surface, a bottom surface facing the top surface and a side surface continuous approximately perpendicularly to the top surface and the bottom surface; a coil which is buried inside the magnetic core and whose end portion protrudes from the side surface of the magnetic core; a flat-shaped terminal which protrudes from the side surface of the magnetic core, is bent toward the bottom surface of the magnetic core and is connected with the end portion of the coil, wherein there is formed an opening portion at a position corresponding to the place which is bent for the flat-shaped terminal from the side surface to the bottom surface of the magnetic core. | 06-20-2013 |
20140090235 | COIL COMPONENT - A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part o the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core. | 04-03-2014 |
Patent application number | Description | Published |
20120020700 | ELECTROCONDUCTIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS - Provided is an electroconductive member that can demonstrate stable performance for a long period of time with an electric resistance value being hardly changed even by electrical conduction for a long period of time. | 01-26-2012 |
20120027456 | ELECTRO-CONDUCTIVE MEMBER FOR ELECTROPHOTOGRAPHY, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - Provided is the following electro-conductive member for electrophotography. The electrical resistance of the member hardly increases even by long-term energization, and hence the member is conducive to stable formation of high-quality electrophotographic images. The electro-conductive member for electrophotography, comprises: an electro-conductive mandrel and an electro-conductive layer, wherein said electro-conductive layer contains an A-B-A type triblock copolymer in which an A-block is a polystyrene having a cation exchange group, and a B-block is a polyolefin, and wherein said A-B-A type triblock copolymer forms a microphase-separated structure comprising a matrix phase formed of said B-block, and one phase formed of the A-block and having a structure selected from the group consisting of a cylindrical structure, a bicontinuous structure and a lamellar structure. | 02-02-2012 |
20120070188 | ELECTROCONDUCTIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS - An electroconductive member excellent in durability even when applying direct current voltage over a long period of time is provided. Disclosed is an electroconductive member including an electroconductive mandrel and an electroconductive layer, wherein: the electroconductive layer includes a binder resin and an electroconductive metal oxide particle dispersed in the electroconductive layer; the metal oxide particle has a group represented by the following structural formula (1) on the surface of the metal oxide particle; and the group represented by the following structural formula (1) is introduced by substituting a hydrogen atom of a hydroxyl group as a functional group originating from the metal oxide particle, with the group represented by the following structural formula (1): | 03-22-2012 |
20120251171 | CONDUCTIVE MEMBER - Provided is such a conductive member that a change in its electrical resistance value caused by its long-term use is reduced to the extent possible. The conductive member has a conductive support and a conductive layer, the conductive layer contains a rubber composition formed of a modified epichlorohydrin rubber, and the modified epichlorohydrin rubber has a unit represented by the following formula (1). In the formula (1), R1, R2, and R3 each independently represent hydrogen or a saturated hydrocarbon group having 1 to 18 carbon atoms. | 10-04-2012 |
20120308261 | CONDUCTIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - Provided is a conductive member for electrophotography whose electrical resistance hardly increases even by long-term application of a high voltage. The conductive member for electrophotography is a conductive member for electrophotography, including: a conductive support; and a conductive elastic layer, in which: the elastic layer contains an A-B-A type block copolymer constituted of a non-ion conducting block (A block) and an ion conducting block (B block) having an ion exchange group; the block copolymer forms a microphase-separated structure; and the A block forms any structure selected from the group consisting of a spherical structure, a cylindrical structure, and a bicontinuous structure, and the B block forms a matrix for the structure. | 12-06-2012 |
20130236213 | ELECTRO-CONDUCTIVE MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - To suppress an excessive reduction in resistance of an electro-conductive roller under an H/H environment and reduce a resistance value thereof under an L/L environment, provided is an electro-conductive member for electrophotography, comprising: an electro-conductive mandrel; and an electro-conductive layer provided on a periphery of the mandrel, wherein the electro-conductive layer contains a binder resin having an alkylene oxide structure, and a sulfo or a quaternary ammonium group as an ion exchange group, and an ion having polarity opposite to polarity of the ion exchange group, a water content of the electro-conductive layer under a temperature of 30° C. and a relative humidity of 80% is 10 mass % or less, and a spin-spin relaxation time of the electro-conductive layer, which is determined by pulse NMR measurement with a hydrogen core being a measurement core under a temperature of 15° C. and a relative humidity of 10%, is 200 μsec or more. | 09-12-2013 |
20130279936 | ELECTRICALLY CONDUCTING MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - To provide an electrically conducting member for electrophotography which can not easily come to change in electrical resistance value even upon application of direct current and also has made any ion conducting agent kept from bleeding. The electrically conducting member has an electrically conducting substrate and an electrically conducting layer; the electrically conducting layer containing an epichlorohydrin rubber having in the molecular structure at least an alkylene oxide (AO) unit, an epichlorohydrin (ECH) unit and a unit having a sulfonate ion; the AO unit being at least one unit of an ethylene oxide unit, a propylene oxide unit and a butylene oxide unit; and the AO unit(s) in the rubber being in a content of 5 to 60% by mass in total and the ECH unit in the rubber being in a content of 30% by mass or more. | 10-24-2013 |
20130281275 | ELECTRICALLY CONDUCTING MEMBER FOR ELECTROPHOTOGRAPHY, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS - To provide an electrically conducting member for electrophotography that has made itself kept from increasing in electrical resistance with time even in a low temperature and low humidity environment and also has made any ion conducting agent kept from bleeding to its surface. To also provide a process cartridge, and an electrophotographic image forming apparatus, that can stably form high-grade electrophotographic images over a long period of time in a variety of environments. The conductive member for electrophotography has an electrically conducting substrate and an electrically conducting layer, and the electrically conducting layer contains a resin having in the molecule at least one structure selected from structures represented by the formula (1), formula (2) and formula (3) each defined in the specification. The process cartridge and the electrophotographic image forming apparatus each make use of the same. | 10-24-2013 |
20130315620 | ELECTRO-CONDUCTIVE MEMBER FOR ELECTROPHOTOGRAPHY, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - An electro-conductive member for electrophotography, including an electro-conductive mandrel and an electro-conductive layer; and a process cartridge and an electrophotographic apparatus using the same. The layer contains a binder resin having a sulfo or a quaternary ammonium group as an ion exchange group, and an ion opposite in polarity to the ion exchange group. The resin has any one of structures represented by formulas (1)-1 and (1)-2, and any one of structures represented by formulas (2)-1 to (2)-3; and the resin has a molecular structure preventing occurrence of a matrix-domain structure. M represents an integer of 2-20, n represents an integer of 5-50, p represents an integer of 1-25, q represents an integer of 1-15, and r represents an integer of 1-12. | 11-28-2013 |