Patent application number | Description | Published |
20080212359 | Memory Device and Semiconductor Integrated Circuit - First electrode layer includes a plurality of first electrode lines (W | 09-04-2008 |
20090067214 | Electric element, memory device, and semiconductor integrated circuit - An electric element includes a first terminal ( | 03-12-2009 |
20090067215 | Electric element, memory device, and semiconductor integrated circuit - An electric element comprises: a first electrode ( | 03-12-2009 |
20090283736 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 11-19-2009 |
20090321709 | MEMORY ELEMENT, MEMORY APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - A memory element comprises a first electrode, a second electrode, and a resistance variable film | 12-31-2009 |
20100002490 | ELECTRIC ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT - An electric element includes: a first electrode; a second electrode; and a variable-resistance film connected between the first electrode and the second electrode. The variable-resistance film includes Fe | 01-07-2010 |
20100177555 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 07-15-2010 |
20100188884 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode ( | 07-29-2010 |
20100207094 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 08-19-2010 |
20100259966 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND NONVOLATILE SEMICONDUCTOR APPARATUS - A nonvolatile memory element comprises a first electrode ( | 10-14-2010 |
20100271860 | DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT, INITIALIZATION METHOD OF VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE STORAGE DEVICE - A method of driving a variable resistance element includes: a writing step performed by applying a writing voltage pulse having a first polarity to a variable resistance layer to change a resistance state of the layer from high to low; and an erasing step performed by applying an erasing voltage pulse having a second polarity to the layer to change the state from low to high. Here, |Vw1|>|Vw2| where Vw1 represents a voltage value of the writing voltage pulse for first to N-th writing steps (N≧ | 10-28-2010 |
20110002154 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 01-06-2011 |
20110031465 | RESISTANCE VARIABLE ELEMENT AND MANUFACTURING METHOD THEREOF - A resistance variable element of the present invention comprises a first electrode ( | 02-10-2011 |
20110044088 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL - A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate ( | 02-24-2011 |
20110080770 | METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE - Applying a writing voltage pulse having a first polarity to a metal oxide layer ( | 04-07-2011 |
20110233510 | NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 09-29-2011 |
20110284816 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode ( | 11-24-2011 |
20110294259 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 12-01-2011 |
20120074375 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 03-29-2012 |
20120281453 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE - The variable resistance nonvolatile storage device includes a memory cell ( | 11-08-2012 |
20120320661 | METHOD OF PROGRAMMING VARIABLE RESISTANCE ELEMENT AND NONVOLATILE STORAGE DEVICE - A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing voltage pulse different from the first polarity to the metal oxide layer to change its resistance state from low to high into an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer before first application of the writing voltage pulse, to change an initial resistance value of the metal oxide layer. R | 12-20-2012 |
20130037775 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 02-14-2013 |
20130112936 | RESISTANCE CHANGE ELEMENT AND MANUFACTURING METHOD THEREFOR - A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first transition metal oxide layer, the second electrode has a single needle-shaped part at the interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the needle-shaped part. | 05-09-2013 |
20130242642 | VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT WRITING METHOD - A variable resistance nonvolatile memory element writing method according to the present disclosure includes: (a) changing a variable resistance layer to a low resistance state by applying, to a second electrode, a first voltage which is negative with respect to a first electrode; and (b) changing the variable resistance layer to a high resistance state. Step (b) includes: (i) applying, to the second electrode, a second voltage which is positive with respect to the first electrode; and (ii) changing the variable resistance layer to the high resistance state by applying, to the second electrode, a third voltage, which is negative with respect to the first electrode and is smaller than the absolute value of a threshold voltage for changing the variable resistance layer from the high resistance state to the low resistance state, after the positive second voltage is applied in step (i). | 09-19-2013 |
20130250658 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: a first electrode; a second electrode; and a variable resistance layer which includes: a first oxide layer including a first metal oxide; a second oxide layer located between and in contact with the first oxide layer and a second electrode including a second metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than the degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer. | 09-26-2013 |
20140029330 | METHOD FOR DRIVING NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A method for driving a nonvolatile memory element includes: a writing step of changing a variable resistance layer to a low resistance state, by applying a writing voltage pulse having a first polarity; and an erasing step of changing the variable resistance layer to a high resistance state, by applying an erasing voltage pulse having a second polarity different from the first polarity, wherein in the writing step, a first input and output terminal of a field effect transistor is a source terminal of the transistor, and when a pulse width of the writing voltage pulse is PWLR and a pulse width of the erasing voltage pulse is PWHR, PWLR and PWHR satisfy a relationship of PWLR01-30-2014 | |
20140050014 | DRIVING METHOD OF VARIABLE RESISTANCE ELEMENT AND NON-VOLATILE MEMORY DEVICE - A method of driving a variable resistance element comprises: before a first write step is performed, applying an initial voltage pulse of a first polarity to change a resistance value of a metal oxide layer from a resistance value corresponding to an initial state of the metal oxide layer to another resistance value; wherein when the resistance value corresponding to the initial state is R0, the resistance value corresponding to a write state is RL, the resistance value corresponding to an erase state is RH, another resistance value is R2, a maximum value of the current flowing when the initial voltage pulse is applied is IbRL, a maximum value of the current flowing when the write voltage pulse is applied is IRL, and a maximum value of the current flowing when the erase voltage pulse is applied is IRH, R0>RH>R2≧RL, and |IRL|>|IbRL| are satisfied. | 02-20-2014 |
20140126268 | METHOD OF DRIVING NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A method of driving a nonvolatile memory element including a variable resistance element having a state reversibly changing between low and high resistance states by an applied electrical signal and a transistor serially connected to the variable resistance element. The method including: setting the variable resistance element to the low resistance state by applying a first gate voltage to a gate of the transistor and applying a first write voltage negative with respect to a first electrode; and changing a resistance value of the transistor obtained in a low-resistance write operation, when a value of current passing through the variable resistance element in the setting of the low resistance state or a resistance value of the nonvolatile memory element in the case where the variable resistance element is in the low resistance state is outside a predetermined range. | 05-08-2014 |