Patent application number | Description | Published |
20090250678 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE ELEMENT ARRAY - A nonvolatile memory apparatus comprises a first electrode ( | 10-08-2009 |
20090283736 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 11-19-2009 |
20090321709 | MEMORY ELEMENT, MEMORY APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT - A memory element comprises a first electrode, a second electrode, and a resistance variable film | 12-31-2009 |
20100008127 | RESISTANCE VARIABLE ELEMENT AND RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable element of the present invention and a resistance variable memory apparatus using the resistance variable element are a resistance variable element ( | 01-14-2010 |
20100027320 | RESISTANCE VARIABLE ELEMENT, RESISTANCE VARIABLE MEMORY APPARATUS, AND RESISTANCE VARIABLE APPARATUS - A resistance variable element ( | 02-04-2010 |
20100046273 | RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE - Memory cells (MC) are formed at intersections of bit lines (BL) extending in the X direction and word lines (WL) extending in the Y direction. A plurality of basic array planes sharing the word lines (WL), each formed for a group of bit lines (BL) aligned in the Z direction, are arranged side by side in the Y direction. In each basic array plane, bit lines in even layers and bit lines in odd layers are individually connected in common. Each of selection switch elements ( | 02-25-2010 |
20100148143 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING NONVOLATILE MEMORY ELEMENT - A nonvolatile semiconductor apparatus of the present invention comprises ( | 06-17-2010 |
20100172171 | RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable memory apparatus ( | 07-08-2010 |
20100232204 | RESISTANCE VARIABLE ELEMENT, NONVOLATILE SWITCHING ELEMENT, AND RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable element comprises a first electrode ( | 09-16-2010 |
20100271859 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS, AND READING METHOD AND WRITING METHOD THEREFOR - A nonvolatile memory element ( | 10-28-2010 |
20100308298 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element includes a first electrode ( | 12-09-2010 |
20110031465 | RESISTANCE VARIABLE ELEMENT AND MANUFACTURING METHOD THEREOF - A resistance variable element of the present invention comprises a first electrode ( | 02-10-2011 |
20110044088 | VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL - A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate ( | 02-24-2011 |
20110249486 | RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable memory apparatus ( | 10-13-2011 |
20110284816 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode ( | 11-24-2011 |
20110294259 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 12-01-2011 |
20120074369 | NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY ELEMENT ARRAY - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 003-29-2012 | |
20120112153 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a nonvolatile memory device which requires a lower initializing voltage such that the nonvolatile memory device can be operated at a low voltage. The nonvolatile memory device ( | 05-10-2012 |
20120235111 | NONVOLATILE MEMORY ELEMENT HAVING A TANTALUM OXIDE VARIABLE RESISTANCE LAYER - A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 009-20-2012 | |
20120292588 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device including: a strip-shaped first electrode line ( | 11-22-2012 |
20120295413 | METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY ELEMENT AND METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A method of manufacturing a non-volatile semiconductor memory element including a variable resistance element and a non-ohmic element. The variable resistance element includes a first electrode, a variable resistance layer, and a shared electrode. The non-ohmic element includes the shared electrode, a semiconductor or insulator layer, and a second electrode. The method includes: forming the first electrode on a substrate; forming the variable resistance layer on the first electrode; forming the shared electrode by nitriding a front surface of the variable resistance layer; forming the semiconductor or insulator layer on the shared electrode; and forming the second electrode. In the forming of the shared electrode, a front surface of a transition metal oxide is nitrided by a plasma nitriding process to form the shared electrode comprising a transition metal nitride. | 11-22-2012 |
20130122651 | MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE - Each of the step of forming a first variable resistance layer ( | 05-16-2013 |
20130248813 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a nonvolatile semiconductor memory device including a variable resistance element in which a parasitic resistance between the lower electrode and the variable resistance layer included in the variable resistance element is reduced. The nonvolatile semiconductor memory device includes: a substrate; and a variable resistance element formed on the substrate, wherein the variable resistance element includes a lower electrode layer formed on the substrate, a variable resistance layer formed on the lower electrode layer, and an upper electrode layer formed on the variable resistance layer, the lower electrode layer includes at least a first conductive layer and a second conductive layer which is formed on the first conductive layer and is in contact with the variable resistance layer, and the first conductive layer includes an oxidatively degraded layer which is formed on an upper surface of the first conductive layer due to oxidization of the first conductive layer. | 09-26-2013 |
20130270510 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first semiconductor layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second semiconductor layer which covers side surfaces of the first current steering element electrode, the first semiconductor layer, and the second current steering element electrode. | 10-17-2013 |
20140021429 | NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer positioned between the first electrode and the second electrode. The variable resistance layer has a resistance state which reversibly changes based on an electrical signal applied between the first electrode and the second electrode. The variable resistance layer includes a first variable resistance layer having a first metal oxide and a second variable resistance layer having a second metal oxide. The second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, and the second metal oxide has a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide. | 01-23-2014 |
20140138599 | NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory element includes a first and a second electrode layers, and a variable resistance layer provided between the first and the second electrode layers and having a resistance value reversibly changing according to application of an electrical pulse, wherein the variable resistance layer includes a first variable resistance layer contacting the first electrode layer and comprising an oxygen-deficient first metal oxide, and a second variable resistance layer contacting the first variable resistance layer and comprising a second metal oxide having a smaller oxygen deficiency than the first metal oxide, and including host layers and an inserted layer between each of adjacent pairs of the host layers, wherein the second metal oxide of the inserted layer has a larger oxygen deficiency than the second metal oxide of the host layer, and the first metal oxide has a larger oxygen deficiency than the second metal oxide of the host layer. | 05-22-2014 |