Patent application number | Description | Published |
20090012402 | Mobile in vivo infra red data collection and diagnoses comparison system - Described is a mobile in vivo infrared brain scan and analysis system. The system includes a data collection subsystem and a data analysis subsystem. The data collection subsystem is a helmet with a plurality of infrared (IR) thermometer probes. Each of the IR thermometer probes includes an IR photodetector capable of detecting IR radiation generated by evoked potentials within a user's skull. The helmet is formed to collect brain data that is reflective of firing neurons in a mobile subject and transmit the brain data to the data analysis subsystem. The data analysis subsystem is configured to generate and display a three-dimensional image that depicts a location of the firing neurons. The data analysis subsystem is also configured to compare the brain data against a library of brain data to detect an anomaly in the brain data, and notify a user of any detected anomaly in the brain data. | 01-08-2009 |
20090127462 | nBn AND pBp INFRARED DETECTORS WITH GRADED BARRIER LAYER, GRADED ABSORPTION LAYER, OR CHIRPED STRAINED LAYER SUPER LATTICE ABSORPTION LAYER - An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed. | 05-21-2009 |
20100006822 | COMPLEMENTARY BARRIER INFRARED DETECTOR (CBIRD) - An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier. | 01-14-2010 |
20100072514 | HIGH OPERATING TEMPERATURE BARRIER INFRARED DETECTOR WITH TAILORABLE CUTOFF WAVELENGTH - A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array. | 03-25-2010 |
20100155777 | DIGITAL ALLOY ABSORBER FOR PHOTODETECTORS - In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation. | 06-24-2010 |
20110176577 | SUPERPIXEL MULTI-WAVEBAND PHOTODETECTOR ARRAY FOR REMOTE TEMPERATURE MEASUREMENT - A multi-waveband temperature sensor array, in which each superpixel (e.g., 2×2 pixel cell) operates at a distinct thermal infrared (IR) waveband (e.g. four wavebands) is disclosed. Using an example high spatial resolution, four-band thermal IR band photodetector array, accurate temperature measurements on the surface of an object can be made without prior knowledge of the object emissivity. The multiband photodetector may employ intersubband transition in III-V semiconductor-based quantum layered structures where each photodetector stack absorbs photons within the specified wavelength band while allowing the transmission of photons in other spectral bands, thus efficiently permitting multiband detection. This produces multiple, spectrally resolved images of a scene that are recorded simultaneously in a single snapshot of the FPA. From the multispectral images and calibration information about the system, computational algorithms are used to produce the surface temperature map of a target. | 07-21-2011 |
20120145996 | BARRIER INFRARED DETECTOR - A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays. | 06-14-2012 |
20130146998 | SINGLE-BAND AND DUAL-BAND INFRARED DETECTORS - Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed. | 06-13-2013 |