Patent application number | Description | Published |
20080286487 | PROCESS FOR MAKING CONTAINED LAYERS - There is provided a process for forming a contained second layer over a first layer, including the steps:
| 11-20-2008 |
20080309221 | Containment Structure For an Electronic Device - In one embodiment, a containment structure ( | 12-18-2008 |
20090072713 | COATED SUBSTRATE AND METHOD OF MAKING SAME - Provided are containment structures having a substrate structure having a plurality of walls extending from a surface to define a space, wherein at least one of the walls has an overall negative slope; a first layer deposited in the space having a first surface energy no greater and a second layer deposited on top of the first layer. | 03-19-2009 |
20100213454 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer. The process comprises forming the first layer having a first surface energy and then treating the first layer with a photocurable surface-active composition which is a fluorinated ester or fluorinated imide of an α,β-unsaturated polyacid; exposing the photocurable surface-active composition patternwise with radiation resulting in exposed areas and unexposed areas; developing the photocurable surface-active composition to remove the unexposed areas resulting in a first layer having untreated portions in the unexposed areas and treated portions in the exposed areas, where the treated portions have a second surface energy that is lower than the first surface energy; and forming the second layer on the untreated portions of the first layer. There is also provided an organic electronic device made by the process. | 08-26-2010 |
20110092076 | APPARATUS AND METHOD OF VAPOR COATING IN AN ELECTRONIC DEVICE - An apparatus and method for vapor phase deposition of a reactive surface area (RSA) material onto a substrate of an electronic device. The vapor phase deposition is conducted at ambient pressures in air, and provides capture of residual vapor to minimize environmental release of RSA and other constituents used in the processing. | 04-21-2011 |
20110183268 | PROCESS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps:
| 07-28-2011 |
20110300657 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER - There is provided a process for forming a layer of electroactive material. The process includes: depositing a liquid composition containing an electroactive material and at least one solvent onto a workpiece to form a wet layer; placing the wet layer on the workpiece into a vacuum chamber containing solid absorptive material; and treating the wet layer at a controlled temperature in the range of −25° C. to 80° C. and under an applied vacuum in the range of 10 | 12-08-2011 |
20110305824 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER - There is provided a process for vacuum drying. The process includes the steps of: depositing a liquid composition containing a film-forming material and at least one solvent onto a workpiece to form a wet layer; placing the wet layer on the workpiece into a vacuum chamber including a condenser; and treating the wet layer at a controlled temperature in the range of −25 to 80° C. and under an applied vacuum in the range of 10 | 12-15-2011 |
20110309360 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER - There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes: providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of −25 to 80° C. and under a vacuum in the range of 10 | 12-22-2011 |
20140264307 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER - There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes: providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of −25 to 80° C. and under a vacuum in the range of 10 | 09-18-2014 |
Patent application number | Description | Published |
20110095207 | METHOD AND APPARATUS OF HALOGEN REMOVAL USING OPTIMAL OZONE AND UV EXPOSURE - A method and apparatus for removing halogen residue from a processed wafer is provided. A wafer is transferred into a processing tool where it is processed in a manner that leaves halogen residue on the wafer. The processed wafer is then moved into a degas chamber where it is treated with UV light and a gas mixture containing at least one of ozone and oxygen to remove the halogen residue. Once treated, the wafer is transferred into an isolation station where it is isolated from the unprocessed wafers for a period of time to allow any remaining residue to dissipate before it is returned to the cassette where it started. | 04-28-2011 |
20110097902 | METHOD AND APPARATUS OF HALOGEN REMOVAL - A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H | 04-28-2011 |
20130203255 | WAFERLESS AUTO CONDITIONING - A method for reducing contamination in an etch chamber is provided. A substrate with a metal containing layer is placed in the etch chamber. The metal containing layer is etched, producing nonvolatile metal residue deposits on surfaces of the etch chamber, wherein some of the metal residue of the metal residue deposits is in a first state. The substrate is removed from the etch chamber. The chamber is conditioned by converting metal residue in the first state to metal residue in a second state, where metal residue in the second state has stronger adhesion to surfaces of the etch chamber than metal residue in the first state. | 08-08-2013 |
20140342568 | CONTROLLING TEMPERATURE OF A FARADAY SHIELD - A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition. | 11-20-2014 |
20150024602 | METHOD FOR POSITIONING SPACERS IN PITCH MULTIPLICATION - Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed. | 01-22-2015 |