Patent application number | Description | Published |
20100259983 | NONVOLATILE MEMORY DEVICE AND DATA RANDOMIZING METHOD THEREOF - A method is for operating a nonvolatile memory device, where the memory device includes a memory cell array and a page buffer block. The method includes loading program data into the page buffer block, loading random sequence data into the page buffer block, generating randomized data by executing a logic operation, such as a bit-wise XOR operation, in the page buffer circuit on the program data and the first random sequence data, and programming the randomized data into the memory cell array. | 10-14-2010 |
20110051514 | NONVOLATILE MEMORY DEVICE, MEMORY SYSTEM INCORPORATING SAME, AND METHOD OF OPERATING SAME - A nonvolatile memory device performs a program operation comprising applying a program pulse to selected memory cells, detecting a number of fail bits among the selected memory cells, the fail bits comprising failed program bits and disturbed inhibit bits, and determining a program completion status of the program operation based on the number of detected fail bits. | 03-03-2011 |
20110075478 | NONVOLATILE MEMORY DEVICE AND SYSTEM, AND METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE - A nonvolatile memory includes a plurality of N-bit multi-level cell (MLC) memory cells and a controller. The plurality of N-bit MLC memory cells are for storing N pages of data, each of the MLC memory cells programmable into any one of 2 | 03-31-2011 |
20110119432 | NONVOLATILE MEMORY DEVICES HAVING IMPROVED READ PERFORMANCE RESULTING FROM DATA RANDOMIZATION DURING WRITE OPERATIONS - Memory devices include an array of non-volatile memory cells and a memory control circuit. The memory control circuit, which is electrically coupled to the array of non-volatile memory cells, includes a pseudo-random data coder/decoder circuit. This pseudo-random data coder/decoder circuit is configured to convert a first block of input data to be written into the memory device into a second block of data. This second block of data is encoded as a two-dimensional pseudo-random distribution of data values, which are more uniformly distributed relative to data values in the first block of input data. The memory control circuit is further configured to write the second block of data into the array of non-volatile memory cells during a plurality of page write operations. | 05-19-2011 |
20110222342 | DATA STORAGE SYSTEM HAVING MULTI-BIT MEMORY DEVICE AND OPERATING METHOD THEREOF - A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory and which controls the non-volatile memory device. The operating method of the data storage device includes storing data in the buffer memory according to an external request, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of the memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to the multi-bit memory device based on the determined program pattern. | 09-15-2011 |
20120134207 | Non-Volatile Memory Device And Read Method Thereof - In one embodiment, the method for reading memory cells in an array of non-volatile memory cells includes reading data from a memory cell using a set of hard decision voltages and at least a first set of soft decision voltages based on a single read command. | 05-31-2012 |
20120173800 | SYSTEM INCLUDING DATA STORAGE DEVICE, AND DATA STORAGE DEVICE INCLUDING FIRST AND SECOND MEMORY REGIONS - A data storage device includes a non-volatile memory device including a memory cell array, where the memory cell array includes a first region and a second region, and a memory controller configured to judge whether a size of data externally provided according to a write request exceeds a reference size, and to control the non-volatile memory device according to a judgment result. When the externally provided data exceeds the reference size, the memory controller controls the non-volatile memory device such that a portion of the externally provided data is stored in the second region via a main program operation and such that a remainder of the externally provided data is stored in the first region via a buffer program operation. | 07-05-2012 |
20120269002 | PROGRAMMING METHOD FOR NONVOLATILE MEMORY DEVICE - A method of programming memory cells (transistors) of a nonvolatile memory device from a first set of (previous) logic states to a second set of (final) logic states. The method includes applying program voltages to selected memory transistors; and applying a pre-verification voltage and a target verification voltage for verifying the current logic state of the selected memory transistors. The voltage interval between logic states of the second set of logic states is less than the voltage interval between logic states of the first set of logic states. A target verification voltage for verifying a first memory transistor is at one logic state of the second set is used as a pre-verification voltage for verifying that a second memory transistor to be programmed to higher logic state of the second set. | 10-25-2012 |
20120290897 | DATA STORAGE SYSTEM HAVING MULTI-BIT MEMORY DEVICE AND ON-CHIP BUFFER PROGRAM METHOD THEREOF - A data storage device includes a multi-bit memory device including a memory cell array, the memory cell array including a first memory region and a second memory region, and a memory controller including a buffer memory and configured to control the multi-bit memory device. The memory controller is configured to control the multi-bit memory device to execute a buffer program operation in which data stored in the buffer memory is stored in the first memory region, and to control the multi-bit memory device to execute a main program operation in which the data stored in the first memory region is stored in the second memory region. The memory controller is further configured to generate parity data based upon the data stored to the first region, the parity data being copied from the first memory region to the second memory region via the main program operation. | 11-15-2012 |
20120314500 | NONVOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING NONVOLATILE MEMORY DEVICES - A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation. | 12-13-2012 |
20120324178 | DATA STORAGE SYSTEM HAVING MULTI-BIT MEMORY DEVICE AND ON-CHIP BUFFER PROGRAM METHOD THEREOF - Disclosed is an on-chip buffer program method for a data storage device which comprises a multi-bit memory device and a memory controller. The on-chip buffer program method includes measuring a performance of the data storage device, judging whether the measured performance satisfies a target performance of the data storage device, and selecting one of a plurality of scheduling manners as an on-chip buffer program scheduling manner of the data storage device according to the judgment result. | 12-20-2012 |
20130117500 | MEMORY SYSTEM AND MEMORY MANAGING METHOD THEREOF - A memory managing method is provided for a memory system, including a nonvolatile memory device and a memory controller controlling the nonvolatile memory device. The memory managing method includes determining whether a program-erase number of a memory block in the nonvolatile memory device reaches a first reference value; managing a life of the memory block according to a first memory managing method when the program-erase number of the memory block is determined to be less than the first reference value; and managing the life of the memory block according to a second memory managing method different from the first memory managing method when the program-erase number of the memory block is determined to be greater than the first reference value. | 05-09-2013 |
20130117620 | MEMORY SYSTEM AND OPERATING METHOD THEREOF - A memory system includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device and configured to provide the nonvolatile memory device with error flag information including error location information of an error of data read from the nonvolatile memory device. | 05-09-2013 |
20130117634 | MEMORY SYSTEM AND DATA STORAGE METHOD - A memory system comprises a nonvolatile memory device comprising a memory cell array comprising first and second memory blocks, and a memory controller configured to control the nonvolatile memory device to read data from the first memory block, selectively determine an error correction operation to be performed on the data after it is read from the first memory block based on a state of at least one of the first and second memory blocks, and then store the data in the second memory block. | 05-09-2013 |
20130138870 | MEMORY SYSTEM, DATA STORAGE DEVICE, MEMORY CARD, AND SSD INCLUDING WEAR LEVEL CONTROL LOGIC - Disclosed is a memory system which includes a nonvolatile memory having a user area and a buffer area; and wear level control logic managing a mode change operation in which memory blocks of the user area are partially changed into the buffer area, based on wear level information of the nonvolatile memory. | 05-30-2013 |
20130141972 | DATA STORAGE SYSTEM HAVING MULTI-BIT MEMORY DEVICE AND OPERATING METHOD THEREOF - A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory and which controls the non-volatile memory device. The operating method of the data storage device includes storing data in the buffer memory according to an external request, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of the memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to the multi-bit memory device based on the determined program pattern. | 06-06-2013 |
20130145234 | Memory Systems and Block Copy Methods Thereof - Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using an address-scrambled reprogramming technique, for example. | 06-06-2013 |
20130223143 | NONVOLATILE MEMORY DEVICE HAVING ADJUSTABLE PROGRAM PULSE WIDTH - A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line. | 08-29-2013 |
20140153331 | MULTI-LEVEL CELL MEMORY DEVICE AND OPERATING METHOD THEREOF - According to an example embodiment of inventive concepts, an operating method of a non-volatile memory device includes: performing a first hard decision read operation that includes applying a first voltage if a selected word line of the non-volatile memory device; storing a result of the first hard decision read operation at a first latch of a page buffer in the non-volatile memory device; performing a second hard decision read operation that includes applying a second voltage to the selected word line, the second voltage being higher than the first voltage; and generating a first soft decision value using a result of the first hard decision read operation stored at the first latch. | 06-05-2014 |
20140185377 | MULTI-LEVEL CELL MEMORY DEVICE AND METHOD OF OPERATING MULTI-LEVEL CELL MEMORY DEVICE - A read method of a multi-level cell memory device includes receiving a first read command, and reading first and second hard decision data by performing first and second hard decision read operations using a first hard decision read voltage and a second hard decision read voltage, respectively, the second hard decision read voltage being higher than the first hard decision read voltage. The method further includes selecting one of the first and second hard decision read voltages, reading first soft decision data by performing a first soft decision read operation using a plurality of soft decision read voltages having voltage levels which are different from that of the selected one of the first and second hard decision read voltages, and providing the first soft decision data to a memory controller for first error correction code (ECC) decoding. | 07-03-2014 |
20140223246 | MEMORY, MEMORY CONTROLLER, MEMORY SYSTEM, METHOD OF MEMORY, MEMORY CONTROLLER AND MEMORY SYSTEM - In one embodiment, the method includes performing a read operation on a memory, and determining, by a memory controller, whether to perform a reliability verification read operation based on a count value and a reference value. The count value is based on a number of read commands issued by the memory controller to the memory, and the reliability verification read operation is for reading data from at least one memory cell associated with at least one unselected word line in the memory. An unselected word line is a word line not selected during the read operation. The method further includes performing the reliability verification read operation for the at least one unselected word line based on the determining. | 08-07-2014 |
20140313824 | DATA STORAGE SYSTEM HAVING MULTI-BIT MEMORY DEVICE AND OPERATING METHOD THEREOF - A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory. The operating method of the data storage device includes storing data in the buffer memory, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of the memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to the multi-bit memory device based on the program pattern. | 10-23-2014 |
20140376312 | NONVOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING NONVOLATILE MEMORY DEVICES - A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation. | 12-25-2014 |
20150039809 | NONVOLATILE MEMORY SYSTEM AND PROGRAMMING METHOD INCLUDING REPROGRAM OPERATION - A program method for a nonvolatile memory system including a reprogram operation that does not require a reload of first program data to page buffers of a constituent nonvolatile memory device between execution of a first coarse program step and execution of a first fine program step being performed after the execution of an intervening second coarse program step. | 02-05-2015 |