Patent application number | Description | Published |
20080199719 | Data recording medium for data storage and method of recording or erasing data using the same - Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer. | 08-21-2008 |
20080309234 | ALTERNATING CURRENT DRIVING TYPE QUANTUM DOT ELECTROLUMINESCENT DEVICE - An alternating current driving type quantum dot electroluminescent device includes; a first electrode, a second electrode, a quantum dot light-emitting layer disposed between the first electrode and the second electrode, and at least one layer selected from the group consisting of a tunneling layer, a bipolar layer, a dielectric layer, an insulating layer, and a combination of layers thereof, disposed between at least one of the first electrode and the quantum dot light-emitting layer, and the second electrode and the quantum dot light-emitting layer. | 12-18-2008 |
20090194764 | Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same - A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer. | 08-06-2009 |
20100237312 | Nonvolatile memory device - The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor. | 09-23-2010 |
20110096215 | Image Sensors and Methods of Manufacturing Image Sensors - An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed. | 04-28-2011 |
20120077301 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench. | 03-29-2012 |
20120252155 | METHOD OF IMPLANTING IMPURITIES AND METHOD OF MANUFACTURING A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) IMAGE SENSOR USING THE SAME - In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed. | 10-04-2012 |
20130320479 | IMAGE SENSOR, IMAGE PROCESSING SYSTEM INCLUDING THE IMAGE SENSOR, AND METHOD OF MANUFACTURING THE IMAGE SENSOR - An image sensor includes a photodetector formed in an epitaxial layer, and trench isolations each formed in a direction from a back side of the epitaxial layer to a front side of the epitaxial layer. Each of the trench isolations is filled with at least one insulator, and the insulator is a negative charge material. | 12-05-2013 |
20140048853 | Image Sensors - An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed. | 02-20-2014 |
Patent application number | Description | Published |
20100151388 | (Meth)acrylate compound, photosensitive polymer, and resist composition including the same - A (meth)acrylate compound having a nitrogen-containing cyclic group, a photosensitive polymer, and a resist composition including the same, the (meth)acrylate compound being represented by the following Chemical Formula 1: | 06-17-2010 |
20100167200 | (Meth)acrylate compound, photosensitive polymer, and resist composition including the same - A (meth)acrylate compound having an acid-labile ester group, a photosensitive polymer, and a resist composition including the same, the (meth)acrylate compound being represented by the following Chemical Formula 1 | 07-01-2010 |
20110045405 | (Meth)acrylate compound, photosensitive polymer, and resist composition - Disclosed are a (meth)acrylate compound, a photosensitive polymer, and a resist composition, and the (meth)acrylate compound includes a lactone-group-containing (meth)acrylate compound represented by the following Chemical Formula 1. | 02-24-2011 |
20110123925 | POLYMER FOR PROTECTIVE LAYER OF RESIST, AND POLYMER COMPOSITION INCLUDING THE SAME - A polymer includes a first repeating unit represented by the following Chemical Formula 1, and a second repeating unit including at least one repeating unit represented by the following Chemical Formulae 2 to 6. | 05-26-2011 |
20110123933 | POLYMER, COMPOSITION FOR PROTECTIVE LAYER, AND PATTERNING METHOD USING THE SAME - A polymer, including a polymerized monomer, the monomer being represented by the following Chemical Formula 1: | 05-26-2011 |