| Patent application number | Description | Published |
|---|
| 20100006145 | SOLAR CELL AND FABRICATING METHOD FOR THE SAME - Example embodiments relate to a solar cell and a method for fabricating the same, and more particularly, to a solar cell in which a substrate capable of functioning as electrode is used and a method for fabricating the same. The solar cell may include a substrate and a semiconductor layer laminated on the substrate. The solar cell may include a conductive substrate. The substrate may be a flexible substrate having a coefficient of thermal expansion comparable to that of the semiconductor layer. The semiconductor layer may be formed on the substrate. The solar cell may include a front electrode formed on the semiconductor layer. | 01-14-2010 |
| 20100037820 | Vapor Deposition Reactor - A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber. | 02-18-2010 |
| 20100037824 | Plasma Reactor Having Injector - A plasma reactor includes a plasma generator configured to spray plasma, and an injector located adjacent to the plasma generator and configured to inject a precursor to the plasma sprayed from the plasma injector. The injector includes a platform having an opening, at least one injection hole formed in the platform to inject the precursor to the opening, and a channel formed in the platform to connect with the at least one injection hole to carry the precursor. The plasma reactor may allow supply of the plasma together with the precursor. In case corona plasma is used where a vacuum state is not needed, a wider process window may be ensured. | 02-18-2010 |
| 20100041179 | Forming Substrate Structure by Filling Recesses with Deposition Material - A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure. | 02-18-2010 |
| 20100041213 | Vapor Deposition Reactor For Forming Thin Film - A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module. | 02-18-2010 |
| 20100064971 | Electrode for Generating Plasma and Plasma Generator - A plasma generator may include a first electrode extending in one direction, and a second electrode spaced apart from the first electrode. Facing surfaces of the first electrode and the second electrode may have spiral shapes along the one direction. A cross-section of the first electrode and a cross-section of the second electrode, which are perpendicular to the one direction, may have at least partially concentric shapes. An electrode for generating plasma may include a platform extending in one direction, and at least one protruding thread spirally formed on a surface of the platform along the one direction. | 03-18-2010 |
| 20100068413 | VAPOR DEPOSITION REACTOR USING PLASMA AND METHOD FOR FORMING THIN FILM USING THE SAME - A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor. | 03-18-2010 |
| 20100181566 | Electrode Structure, Device Comprising the Same and Method for Forming Electrode Structure - An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor can be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device. | 07-22-2010 |
| 20100215871 | METHOD FOR FORMING THIN FILM USING RADICALS GENERATED BY PLASMA - A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved. | 08-26-2010 |
| 20100310771 | VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM - A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space. | 12-09-2010 |
| 20110073236 | HIGH STRENGTH BONDING AND COATING MIXTURE - A mixture includes a silicon compound having a polycarbosilane backbone, and a powder having a plurality of individual powder grains, wherein each of the plurality of powder grains has a diameter substantially between 0.05 micrometers and 50 micrometers. | 03-31-2011 |
| 20110076421 | VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE - A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor. | 03-31-2011 |
| 20110117514 | Silicon Firnaceware for Stressed Film - A method of fabricating the semiconductor wafer processing fixtures for having longer longevity on high stressed film applications such as LPCVD-SiN, silicon carbide and other ceramics than that of non-processed parts. One aspect of the invention includes nitriding, oxidizing, or carbiding a surface layer of a polysilicon part, such as furnaceware, for converting silicon to a silicon compound and its converted surface covers and masks the underlying polycrystalline structure. A plasma immersion ion implantation of a heavy noble gas or carbon, silicon or nitrogen is followed by to form high-energy states creating gettering states adjacent the surface and the ion implanted region serves to anchor production layers such as LPCVD-SiN forming on the polysilicon part. As a result of gettering effect, tightly bonded high stressed film onto a polysilicon part allows the CVD deposition of much thicker films without peeling or cracking as long as the gettering effect remains. | 05-19-2011 |
