Patent application number | Description | Published |
20080232182 | Precharge voltage supplying circuit - A precharge voltage supplying circuit comprises a control signal generating unit for generating a first control signal in response to a power-up signal and a clock enable signal, and a precharge voltage control unit having a bleeder circuit and driving the bleeder circuit in response to the first control signal to control a precharge voltage. The precharge voltage supplying circuit can be widely used in various devices which need the generation of a voltage, a level of which is adjustable according to a PVT characteristic change, and a range of change of which is not so large. | 09-25-2008 |
20090108675 | Threshold voltage control circuit and internal voltage generation circuit having the same - A threshold voltage control circuit includes a first voltage supplying unit for supplying a first power supply voltage, in response to an enable signal which is activated when a bank is enabled, as a back bias voltage of a first MOS transistor, wherein the first MOS transistor drives an internal voltage, and a second voltage supplying unit for supplying a second power supply voltage, in response to the enable signal, as the back bias voltage of the first MOS transistor. | 04-30-2009 |
20090109777 | Sense amplifier power supply circuit - A sense amplifier power supply circuit includes an overdriving unit configured to apply a first voltage to a sense amplifier in response to a first enable signal, a sense amplifier driving unit configured to apply a second voltage to the sense amplifier in response to a second enable signal, and a switching unit configured to selectively apply the first voltage or the second voltage to the sense amplifier in response to the first enable signal and the second enable signal. | 04-30-2009 |
20090268533 | Sensing delay circuit and semiconductor memrory device using the same - A sensing delay circuit includes a logic element which responds to a test mode signal to transfer a start signal, a delay unit which is configured of a plurality of inverters having MOS transistors with controlled threshold voltage, and receives external voltage as bulk voltage and delays an output signal from the logic element by a predetermined period, and a buffer which responds to an output signal from the delay unit to buffer the output signal from the logic element and output it. | 10-29-2009 |
20090268536 | Precharge voltage supply circuit and semiconductor device using the same - A precharge voltage supply circuit and a semiconductor device using the same are disclosed. The semiconductor device includes a first comparator for comparing a precharge voltage with a first reference voltage having a first voltage level and outputting a first compare signal as a result of the comparison, a second comparator for comparing the precharge voltage with a second reference voltage having a second voltage level and outputting a second compare signal as a result of the comparison, a decoder configured to receive and decode the first compare signal and the second compare signal and output a plurality of control signals as a result of the decoding, and a precharge voltage supply circuit configured to receive the plurality of control signals and supply the precharge voltage. | 10-29-2009 |
20100085817 | Semiconductor memory device to reduce off-current in standby mode - A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals. | 04-08-2010 |
20110242919 | Precharge Voltage Supplying Circuit - A precharge voltage supplying circuit comprises a transistor operating in response to a control signal, wherein the transistor is connected between a first node to which an internal voltage is supplied and a second node to which a precharge voltage is supplied, and a resistance element connected in parallel to the transistor between the first node and the second node. | 10-06-2011 |
20110242929 | SEMICONDUCTOR MEMORY APPARATUS - A semiconductor memory apparatus includes a counting control circuit and an address counting circuit. The counting control circuit is configured to generate a first counting start signal, a second counting start signal and a counting count signal in response to an auto-refresh signal, a voltage stabilization signal and a fuse control signal. The address counting circuit is configured to count a plurality of count addresses in response to the first counting start signal, and to count one or more specified count addresses from among the plurality of count addresses in response to the second counting start signal and the counting control signal. | 10-06-2011 |
20120008427 | Semiconductor Memory Device To Reduce Off-Current In Standby Mode - A semiconductor memory device capable of reducing off-current in a standby mode is provided. The semiconductor memory device includes an enable signal generating unit configured to receive a plurality of address decoding signals and generate a first enable signal to select a first cell block and a second enable signal to select a second cell block, and an internal voltage generating unit for generating an internal voltage by controlling a supply of a first voltage in accordance with the first or second enable signals. | 01-12-2012 |