| Patent application number | Description | Published |
|---|
| 20080211945 | Image sensor with extended dynamic range - An image sensor includes a first sub-pixel, a second sub-pixel, and an image processor. The first sub-pixel generates a first image signal with a first sensitivity, and the second sub-pixel generates a second image signal with a second sensitivity less than the first sensitivity. The image signal processor adds a change in the second image signal from a saturation level to the first image signal to generate a final image signal when the first sub-pixel is saturated. | 09-04-2008 |
| 20080315273 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current. | 12-25-2008 |
| 20090008688 | Unit pixels, image sensors and methods of manufacturing the same - Unit pixels, image sensors and methods for fabricating the image sensor are provided. A unit pixel includes: a photodiode for accumulating photocharges; a floating diffusion region for detecting the photocharges accumulated in the photodiode; a reset element for periodically resetting the floating diffusion region; a drive element for amplifying the photocharges accumulated in the floating diffusion region; a selection element for selecting the unit pixel; and a silicide layer formed on top surfaces of the transfer gate. The photocharges are transferred to the floating diffusion region via a transfer gate. | 01-08-2009 |
| 20090027529 | Image sensor with wide operating range - An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation. | 01-29-2009 |
| 20090087986 | Semiconductor devices using fine patterns and methods of forming fine patterns - Example embodiments may provide fine patterns for semiconductor devices and methods of forming fine patterns for semiconductor devices. Example methods may include forming a spacer pattern on a substrate and/or an insulating layer pattern adjacent to sides of the spacer pattern and/or disposed at the same level as the spacer pattern, forming a pair of recesses exposing sides of the spacer pattern by removing a portion of the insulating layer pattern, and/or filling a conductive material in the recesses. | 04-02-2009 |
| 20090108312 | IMAGE SENSOR AND METHOD OF STABILIZING A BLACK LEVEL IN AN IMAGE SENSOR - An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image. | 04-30-2009 |
| 20090134433 | Image sensor - An image sensor includes a substrate in which an active pixel region and an optical black region are defined, a plurality of active pixels in the active pixel region, each active pixel including a first charge-detection unit having a first conversion gain, and a plurality of black pixels in the optical black region, each black pixel including a second charge-detection unit having a second conversion gain. | 05-28-2009 |
| 20090160971 | Image sensor with adjusted gains in active and black pixels - An image sensor includes an active pixel and a black pixel. The active pixel has a first signal gain and a first dark signal level, and the black pixel has a second signal gain and a second dark signal level. At least one of the first and second signal gains is adjusted such that the first and second dark signal levels are substantially equal for minimizing image defects in the image sensor. | 06-25-2009 |
| 20100224588 | METHODS OF FORMING METAL-INSULATOR-METAL (MIM) CAPACITORS WITH PASSIVATION LAYERS ON DIELECTRIC LAYERS - Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed. | 09-09-2010 |
| 20110057279 | ANTI-REFLECTIVE IMAGE SENSOR - An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed in the substrate; third color sensing pixels disposed in the substrate; a first layer disposed directly on the first, second and third color sensing pixels; a second layer disposed directly on the first layer overlying the first, second and third color sensing pixels; and a third layer disposed directly on portions of the second layer overlying at least one of the first or second color sensing pixels, wherein the first layer has a first refractive index, the second layer has a second refractive index greater than the first refractive index, and the third layer has a third refractive index greater than the second refractive index. | 03-10-2011 |
