Sang Ho Yoon
Sang Ho Yoon, Seongnam-Si KR
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20090311817 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. | 12-17-2009 |
20110033965 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. | 02-10-2011 |
20110053298 | VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat. | 03-03-2011 |
Sang Ho Yoon, Gunpo KR
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20090258454 | METHOD OF MANUFACTURING GALLIUM NITRIDE BASED LIGHT EMITTING DIODE HAVING SURFACE IRREGULARITIES - An n-type GaN layer is formed on a substrate, and an active layer is formed on the n-type GaN layer. A p-type GaN layer is formed on the active layer, and portions of the p-type GaN layer and the active layer are mesa-etched so as to expose a portion of the n-type GaN layer. An irregularities forming layer is formed on the p-type GaN layer and a photosensitive film pattern for forming a surface irregularities pattern is formed on the irregularities forming layer. The irregularities forming layer is selectively wet-etched by using the photosensitive film pattern as an etching mask, thereby forming surface irregularities. A p-electrode is formed on the p-type GaN layer having the surface irregularities formed thereon, and an n-electrode is formed on the exposed n-type GaN layer.” | 10-15-2009 |
20110198625 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY - A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures. | 08-18-2011 |
Sang Ho Yoon, Seongnam KR
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20090221110 | VERTICAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga | 09-03-2009 |
Sang Ho Yoon, Yongin KR
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20090159909 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN - A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer. | 06-25-2009 |
20120056150 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE PATTERN - A nitride semiconductor light-emitting device with an electron pattern that applies current uniformly to an active layer to improve light emission efficiency is provided. The nitride semiconductor light-emitting device includes multiple layers of a substrate, an n-type nitride layer, an active layer of a multi-quantum-well structure, and a p-type nitride layer. The nitride semiconductor light-emitting device further includes a p-electrode pattern and an n-electrode pattern. The p-electrode pattern includes one or more p-pads disposed on the p-type nitride layer, and one or more p-fingers extending from the p-pads. The n-electrode pattern includes one or more n-pads disposed on an exposed region of the n-type nitride layer to correspond to the p-pads, and one or more n-fingers extending from the n-pads. The n-fingers have identical resistance, and the p-fingers have identical resistance to improve current spreading to the active layer. | 03-08-2012 |
20120057354 | OPTICAL LENS AND LIGHT SOURCE MODULE, AND STREET LAMP HAVING THE SAME - There are provided an optical lens and a light source module, and a street lamp having the same. The optical lens includes a concave dome shaped inner surface formed to have a similarly-oval shaped lower surface, and formed to include a plurality of light incident surfaces formed to be stepped along the inner surface thereof and stepped surfaces connecting the plurality of light incident surfaces to one another; and an outer surface formed to surround the inner surface. | 03-08-2012 |
Sang Ho Yoon, Gyunggi-Do KR
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20090026478 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light. | 01-29-2009 |
Sang Ho Yoon, Incheon KR
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20080201126 | Method of Automatically Generating the Structures From Mask Layout - A method of defining three-dimensional structure from mask layout for computer simulation, which provides a technology for defining a three-dimensional structure of liquid crystal cell which comprises a apparatus of liquid crystal display for designing and analyzing a apparatus of liquid crystal display. | 08-21-2008 |
Sang Ho Yoon, Yongin-Si KR
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20120163003 | LIGHT EMITTING APPARATUS - A light emitting apparatus is provided. The light emitting apparatus includes a support unit configured to protrude to a front side to which light is emitted, and a heat emitting unit configured to emit heat generated by the light emission in multiple directions. According to the structure, the heat may be emitted quickly. Therefore, quality of the light emitting apparatus may be increased. | 06-28-2012 |
20120230033 | LIGHT EMITTING DIODE (LED) MODULE - A light emitting diode (LED) module is provided. The LED module includes a substrate on which an LED is mounted; a heat radiation unit configured to include an insertion hole for passage of a power supply cable that supplies power to the substrate; a lens plate configured to include a lens corresponding to the LED and to cover the substrate; a rubber seal configured to be disposed between the heat radiation unit and the lens plate; and a waterproof structure configured to be inserted in the insertion hole and to include a through hole to receive the power supply cable, wherein the substrate is received in an inner space constructed as the lens plate, the rubber seal, and the heat radiation unit are connected, and the inner space has a waterproof structure. | 09-13-2012 |
20130058085 | CONDENSING LENS AND LIGHTING DEVICE EQUIPPED WITH SAID CONDENSING LENS - Provided is a condensing lens condensing a light from a light source, and a lighting device equipped with the condensing lens. The condensing lens may enable a light to be selectively incident upon a plurality of first incident portions based on an emission angle, may totally-reflect, using a second incident portion, the light refracted by the plurality of first incident portions, and may refract the totally-reflected light using a third incident portion. | 03-07-2013 |
20130170214 | LIGHT EMITTING DEVICE - A light emitting diode (LED) device is provided, which includes at least one LED unit including at least one LED to emit light, a support unit to support the at least one LED unit, and a heat radiation unit disposed between and in contact with the at least one LED unit and the support unit to transmit and radiate heat generated from the at least one LED unit toward the support unit. Accordingly, a dedicated structure for forming contact with air is unnecessary. Therefore, while securing a light emission function, flexible design and aesthetic appearance of the LED device may be achieved. | 07-04-2013 |
20140043810 | LIGHTING APPARATUS - A lighting apparatus including a base with a coupling rim and a supporting plate and a housing coupled to the coupling rim such that the supporting plate is covered. The housing includes a channel part to guide air in and an air introduction hole to introduce the guided air into an inner space of the housing. A cooling fan is included and is disposed on an upper surface of the supporting plate covered by the housing, wherein the cooling fan draws air introduced through the air introduction hole into the inner space of the housing, and discharges the in-drawn air outside through an air discharging hole in the base. A light source module is included and mounted on a lower surface of the supporting plate, wherein the channel part provides a region depressed in a stepped manner along an outer surface of the housing. | 02-13-2014 |