Patent application number | Description | Published |
20090073415 | Apparatus and method for mounting pellicle - An apparatus and a method for mounting a pellicle includes a pellicle compression plate formed to apply a plurality of particular pressures to a plurality of points or areas of a region of the reticle where a pellicle frame of the pellicle contacts a reticle. | 03-19-2009 |
20090103326 | DISPLAY DEVICE HAVING LIGHT GUIDE UNIT - A light guide unit for a point light source includes a light incident portion, a first reflecting portion and a second reflecting portion. The light emitted from the point light source enters to the light incident portion. The light incident portion includes an optical pattern diffusing an incident light corresponding to the point light source. The first reflecting portion reflects a first light of the incident light. The second reflecting portion roundly connects the first reflecting portion to the light incident portion and reflects a second light of the incident light. | 04-23-2009 |
20090185103 | TWO-WAY BACKLIGHT ASSEMBLY AND TWO-WAY LILQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME - In a two-way backlight assembly and a two-way LCD apparatus, the two-way backlight assembly provides light emitted from one light source to a first direction where a main LCD panel is placed and to a second direction where a sub LCD panel is placed. Also, a sub mold part for receiving the sub LCD panel comprises a black-colored material so as to prevent reflection of the light. Accordingly, thickness and power consumption of the backlight assembly may be reduced and display quality may be also improved by preventing leakage of the light at ends of the sub LCD panel. | 07-23-2009 |
20100172155 | LIGHT GUIDE UNIT FOR POINT LIGHT SOURCE, BACKLIGHT ASSEMBLY HAVING THE LIGHT GUIDE UNIT AND DISPLAY DEVICE HAVING THE SAME - A light guide unit for a point light source includes a light incident portion, a first reflecting portion and a second reflecting portion. The light emitted from the point light source enters to the light incident portion. The light incident portion includes an optical pattern diffusing an incident light corresponding to the point light source. The first reflecting portion reflects a first light of the incident light. The second reflecting portion roundly connects the first reflecting portion to the light incident portion and reflects a second light of the incident light. | 07-08-2010 |
20100266959 | Pattern forming method - A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape. | 10-21-2010 |
20110085123 | DISPLAY DEVICE AND PORTABLE DISPLAY APPARATUS INCLUDING THE SAME - A display device is provided. The display device comprises a display panel. The display device further comprises a transparent film disposed on the display panel and a buffer layer having an adhesive characteristic interposed between the transparent film and the second plate. | 04-14-2011 |
20110165778 | ELECTRON BEAM DEPICTING PATTERN DESIGN, PHOTOMASK, METHODS OF DEPICTING AND FABRICATING PHOTOMASK, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A method of depicting a photomask using e-beams includes preparing a photomask having an e-beam resist, depicting the e-beam resist and forming an e-beam resist pattern on the photomask. Depicting the e-beam resist includes irradiating e-beams to an e-beam depiction region without irradiating the e-beams to an e-beam non-depiction region disposed in the e-beam depiction region. The e-beam depiction region and the e-beam non-depiction region are formed using an e-beam resist pattern having the same polarity. | 07-07-2011 |
20120047474 | Method for Manufacturing Semiconductor Devices - A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern. | 02-23-2012 |
20120058432 | METHODS OF FORMING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHIC SHOT GROUPING - A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set. | 03-08-2012 |
20120148959 | PATTERN FORMING METHOD - A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture. | 06-14-2012 |
20120295434 | SOLDER COLLAPSE FREE BUMPING PROCESS OF SEMICONDUCTOR DEVICE - A method of forming bumps of a semiconductor device with reduced solder bump collapse. The method includes preparing a semiconductor substrate in which pads are exposed externally from a passivation layer; forming a seed layer on the semiconductor substrate; forming a photoresist pattern to expose the seed layer on the pads; forming pillars by performing a primary electroplating on a region exposed by the photoresist pattern; forming a solder layer by performing a secondary electroplating on the pillars; removing the photoresist pattern; forming solder bumps, in which solders partially cover surfaces of the pillars, by performing a reflow process on the semiconductor substrate; and removing portions of the seed layer formed in regions other than the solder bumps. | 11-22-2012 |
20120314198 | METHODS OF ESTIMATING POINT SPREAD FUNCTIONS IN ELECTRON-BEAM LITHOGRAPHY PROCESSES - In a method of estimating a PSF in the electron-beam lithography process, a linear resist test pattern may be formed on a substrate. A line response function (LRF) may be determined using a cross-sectional profile of the linear resist test pattern. A development rate distribution in a first direction, the first direction may be substantially perpendicular to an extending direction of the linear resist test pattern, may be calculated using the LRF. A line spread function (LSF), which may represent an exposure distribution in the first direction, may be calculated using the development rate distribution. The PSF may be estimated using the LSF. | 12-13-2012 |
20130143150 | METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME - A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier. | 06-06-2013 |