Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Sandvik
Anders Sandvik, Oslo NO
| Patent application number | Description | Published |
|---|---|---|
| 20110008476 | Methods of Treating or Preventing Inflammatory Diseases of the Intestinal Tract - The present invention relates to a glucan derived from yeast having a beta-(1, 3)-backbone with one or more beta-(1, 3)-side chains linked thereto for use in the treatment or prevention of inflammatory bowel disease and related diseases of abnormal bowel function in an animal, in particular to such uses employing a soluble glucan, e.g. from | 01-13-2011 |
Bjornar Sandvik, Mountain View, CA US
Lill-Bente Sandvik, Porsgrunn NO
| Patent application number | Description | Published |
|---|---|---|
| 20110304957 | Apparatus For Electric Power Distribution - An apparatus, such as a metering panel, for electric power distribution. An enclosure having an access opening defining an interior space, at least two electrical components for separate phases of electricity. The two components located within the enclosure and spaced laterally apart, at least one electrically insulating barrier panel, movable between at least two guided positions, a working position within the enclosure and between the components and an access position displaced from the components. | 12-15-2011 |
Peter Sandvik, Niskayuna, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20130026559 | SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME - In one embodiment, the invention comprises a MOSFET comprising individual MOSFET cells. Each cell comprises a U-shaped well ( | 01-31-2013 |
Peter Micah Sandvik, Clifton Park, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080302672 | SYSTEMS AND METHODS FOR SENSING - A sensor system for measuring a plurality of chemical species is disclosed. The sensor system includes a plurality of semiconductor device sensor elements, wherein each sensor element includes at least one wide band gap semiconductor layer and at least one catalytic layer configured to have an electrical property modifiable on exposure to an analyte including one or more chemical species; and an acquisition and analysis system configured to receive sensor signals from the plurality of sensor elements and to use multivariate analysis techniques to analyze the sensor signals to provide multivariate analyte measurement data. | 12-11-2008 |
| 20090140293 | HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD - A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article. | 06-04-2009 |
| 20090159929 | HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD - A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device. | 06-25-2009 |
| 20120171824 | HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD - A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region. | 07-05-2012 |
Peter Micah Sandvik, Niskayuna, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100093116 | DIMENSION PROFILING OF SIC DEVICES - There is provided a method for dimension profiling of a semiconductor device. The method involves incorporating a feature comprising a detectable element into the device, and thereafter detecting the detectable element to determine a dimension of the feature. This information can be used for the determination of a dimension of buried channels, and also for end-point detection of CMP processes. | 04-15-2010 |
| 20100140730 | SEMICONDUCTOR DEVICES AND SYSTEMS - A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region. | 06-10-2010 |
| 20110138813 | IMPURITY DETECTION IN COMBUSTOR SYSTEMS - The present invention discloses a combustor system and method of measuring impurities in the combustion system. The combustion system includes an up-stream fuel injection point; a down-stream turbine combustor; a flame zone in the turbine combustor comprising a plurality of axial sub-zones; an optical port assembly configured to obtain a non-axial, direct, optical view of at least one of the plurality of axial sub-zones, and an impurity detection system in optical communication with the optical port assembly. | 06-16-2011 |
| 20110221456 | SENSOR SYSTEM AND METHODS FOR ENVIRONMENTAL SENSING - A sensor system, and an associated method for detecting harsh environmental conditions, is provided. The sensor system includes at least one sensor having an electrical sensing element. The electrical sensing element is based on certain classes of composite materials: (a) silicon carbide (SiC); (Mo,W) | 09-15-2011 |
Tor Erling Sandvik, Trondheim NO
| Patent application number | Description | Published |
|---|---|---|
| 20080256959 | Vessel - A water-going liquefied carbon dioxide (LCD) transport vessel comprising a pressurised and refrigerated LCD container, a cargo discharge pump within said container for pumping LCD out of said container along a conduit, a booster pump for pumping LCD along the conduit to a platform, a first backflow line downstream of the cargo pump to the container, a second backflow line from downstream of the booster pump to the container, and optionally a heater arranged to heat LCD flowing from said vessel along the conduit. | 10-23-2008 |
Tor Erling Sandvik, Flatasen NO
| Patent application number | Description | Published |
|---|---|---|
| 20110113825 | DUAL NITROGEN EXPANSION PROCESS - A method of natural gas liquefaction comprising first and second nitrogen refrigerant streams, each stream under-going a cycle of compression, cooling, expansion and heating, during which the first nitrogen stream is expanded to a first, intermediate pressure and the second nitrogen stream is expanded to a second, lower pressure, and the heating occurs in one or more heat exchangers in which at least one of the expanded nitrogen streams is in heat exchanging relationship with natural gas, wherein, in at least one of said one or more heat exchangers, the first and second expanded nitrogen streams are in a heat exchanging relationship with the natural gas and both the first and second compressed nitrogen streams. The liquefaction can occur in three stages: in an initial stage the heated, expanded first nitrogen stream and the heated, expanded second nitrogen stream are used to cool the natural gas; in an intermediate stage the compressed first nitrogen stream is expanded to an intermediate pressure and used to cool the natural gas; and in a final stage the compressed, second nitrogen stream is expanded to a low pressure and used to cool the natural gas. | 05-19-2011 |