Patent application number | Description | Published |
20090096629 | REUSABLE, HERMETIC, MEDICAL GRADE RFID TAG - An RFID tag includes a circuit board assembly having a circuit board, an RFID circuit, an antenna, and a metallic ground plane. The circuit board has a first side and a second side. The circuit board carries the antenna on the first side and the ground plane on the second side. The RFID circuit is coupled with each of the antenna and the ground plane. A backplane is coupled with the ground plane, on a side of the ground plane opposite the circuit board. An overmolded housing surrounds and hermetically seals the circuit board assembly. The housing is comprised of a material which is both autoclavable and has a low dielectric constant of between approximately 1 to 5. | 04-16-2009 |
20090153304 | SIDE LOADED SHORTED PATCH RFID TAG - An RFID tag includes a circuit board assembly having a substrate comprised of a material with a high dielectric constant of greater than approximately 4 and having a first side and a second side. A patch antenna is mounted to the first side of the substrate. A metallic ground plane is mounted to the second side of the substrate, and an RFID circuit is at the second side of the substrate. A shorting wall includes a plurality of through holes extending through the substrate and interconnecting the antenna with the ground plane. The plurality of through holes are generally linearly arranged relative to each other along an edge of the ground plane. An electrically conductive via extends through the substrate and interconnects the antenna with the RFID circuit. The via is at a distance from the shorting wall whereby an impedance of the RFID circuit approximately matches an impedance of the antenna. A backplane is coupled with the ground plane, on a side of the ground plane opposite the substrate. | 06-18-2009 |
20100090004 | SYSTEM AND METHOD FOR INVENTORY MANAGEMENT OF MEDICAL ASSETS - A system for identification, tracking and management of medical assets, includes a plurality of RFID tagged medical assets, and a completely networked supply chain. The supply chain includes at least one end user location; at least one distributor location; an offsite data management system; a plurality of RFID readers; and at least one data network. Each RFID reader is interspersed at a respective location throughout the networked supply chain and configured to electronically read data from the plurality of RFID tagged medical assets. The one or more data networks interconnect each end user location, each distributor location, and the offsite data management system. The one or more data networks provide real time information from at least one of the plurality of RFID readers to the offsite data management system concerning a current attribute associated with at least one of the RFID tagged medical assets. | 04-15-2010 |
20120091024 | ORTHOPAEDIC INSTRUMENT STERILIZATION CASE - A sterilization case assembly includes a plurality of sterilization cases including a first sterilization case and a second sterilization case, the second sterilization case stacked upon the first sterilization case in a vertical direction, the second sterilization case being configured for both stacking offset from the first sterilization case in a direction transverse to the vertical direction and stacking inline from the first sterilization case in a direction transverse to the vertical direction. | 04-19-2012 |
Patent application number | Description | Published |
20080241755 | CONTACT METALLIZATION OF CARBON NANOTUBES - In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices. | 10-02-2008 |
20090194424 | CONTACT METALLIZATION OF CARBON NANOTUBES - In one embodiment, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) template. Pd is electrodeposited into the template to form nanowires that grow from an underlying conductive layer beneath the PAA and extend to the initiation sites of the SWNTs within each pore. Individual vertical channels of SWNTs are created, each with a vertical Pd nanowire back contact. Further Pd deposition results in annular Pd nanoparticles that form on portions of SWNTs extending onto the PAA surface. Two-terminal electrical characteristics produce linear I-V relationships, indicating ohmic contact in the devices. | 08-06-2009 |
20090214848 | FABRICATION OF NANOWIRE ARRAY COMPOSITES FOR THERMOELECTRIC POWER GENERATORS AND MICROCOOLERS - Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 10 | 08-27-2009 |
20100295023 | FIELD EFFECT TRANSISTOR FABRICATION FROM CARBON NANOTUBES - Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates. | 11-25-2010 |
20120227663 | OXIDE METAL SEMICONDUCTOR SUPERLATTICES FOR THERMOELECTRICS - Lanthanum strontium manganate (La | 09-13-2012 |
20140076373 | FABRICATION OF NANOWIRE ARRAY COMPOSITES FOR THERMOELECTRIC POWER GENERATORS AND MICROCOOLERS - Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 10 | 03-20-2014 |
20140261604 | GIANT CROSS-PLANE SEEBECK EFFECT IN OXIDE METAL SEMICONDUCTOR SUPERLATTICES FOR SPIN-MAGNETIC THERMOELECTRIC DEVICES - Lanthanum strontium manganate (La | 09-18-2014 |
Patent application number | Description | Published |
20090283747 | METALLIZED SILICON SUBSTRATE FOR INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODE - A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer. | 11-19-2009 |
20110079766 | PROCESS FOR FABRICATING III-NITRIDE BASED NANOPYRAMID LEDS DIRECTLY ON A METALIZED SILICON SUBSTRATE - A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The metal layer can be a reflecting surface for the nanopyramid LED. The method for forming nanopyramid LEDs includes obtaining a silicon substrate, depositing a III-nitride layer thereon, depositing a metal layer thereon, depositing a dielectric growth layer thereon, etching a dielectric growth template in the growth layer, and growing III-nitride nanopyramid LEDs through the dielectric growth template in ohmic contact with the metal layer. The etching can be performed by focused ion beam etching. The etching can stop in the metal layer or III-nitride layer, so that the nanopyramid LEDs can seed off the metal layer or III-nitride layer, respectively. | 04-07-2011 |
20110126874 | LAMINATED THIN FILM METAL-SEMICONDUCTOR MULTILAYERS FOR THERMOELECTRICS - A thermoelectric segment and a method for fabricating. The fabricating includes forming structures by depositing thin-film metal-semiconductor multilayers on substrates and depositing metal layers on the multilayers, joining metal bonding layers to form dual structures with combined bonding layers; and removing at least one of the substrates; and using the dual structure to form a thermoelectric segments. The method can include dicing the dual structures before or after removing the substrates. The method can include depositing additional bonding layers and joining dual structures to make thermoelectric segments of different thicknesses. Each multilayer can be about 5-10 μm thick. Each bonding layer can be about 1-2 μm thick. The bonding layers can be made of a material having high thermal and electrical conductivity. The multilayers can be (Hf,Zr,Ti,W)N/(Sc,Y,La,Ga,In,Al)N superlattice layers. Metal nitride layers can be deposited between each of the bonding layers and multilayers. | 06-02-2011 |
20110244235 | GROWTH PROCESS FOR GALLIUM NITRIDE POROUS NANORODS - A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN | 10-06-2011 |
20120096871 | DYNAMIC SWITCHING THERMOELECTRIC THERMAL MANAGEMENT SYSTEMS AND METHODS - A dynamic switching thermoelectric thermal management system and method is disclosed. The thermal management system includes a heat dissipation device, a thermoelectric module, an ambient temperature sensor, a heat source temperature sensor, an energy storage device and a controller. One side of the thermoelectric module is thermally coupled to the heat source and another side is thermally coupled to the heat dissipation device. The controller periodically samples the temperature sensors and dynamically switches the thermoelectric module between a power generation mode in which the thermoelectric module uses the temperature difference between the heat source and ambient to charge the energy storage device, a cooling mode in which the thermoelectric module is powered to create a voltage difference across the thermoelectric module to cool the heat source, and an idle mode. The thermal management system can be integrated into a portable electronic device, for example a portable computing device. | 04-26-2012 |