Patent application number | Description | Published |
20120014164 | RESISTANCE-CHANGE MEMORY AND METHOD OF OPERATING THE SAME - According to one embodiment, a resistance-change memory includes a memory element in which its variable resistance state corresponds to data to be stored therein, a pulse generation circuit which generates a first pulse, a second pulse, a third pulse, and a fourth pulse, the first pulse having a first amplitude which changes the resistance state of the memory element from a high- to a low-resistance state, the third pulse having a third amplitude smaller than the first amplitude to read data in the memory element, the fourth pulse having a fourth amplitude between the first amplitude and the third amplitude, and a control circuit which controls the operations of the memory element and the pulse generation circuit. The control circuit supplies the fourth pulse to the memory element after supplying the first pulse to the memory element. | 01-19-2012 |
20120069662 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes memory cell units including serially-connected memory cells, which includes a semiconductor pillar and conductive and insulation films surrounding the semiconductor pillar. The memory cell units constitute blocks each of which is the minimum unit of data erasure. A pipe layer in at least one pair of adjacent first and second memory cell units of the memory cell units includes a semiconductor layer connected to the semiconductor pillars in the first and second memory cell units, and are connected to first ends of the first and second memory cell units. A conductive plate between the first ends of the first and second memory cell units and the semiconductor substrate contain the pipe layers of at least two blocks and controls conduction of the pipe layers. A supply path structure is connected to the plate and transmitting a potential the plate. | 03-22-2012 |
Patent application number | Description | Published |
20120209939 | MEMORY SYSTEM CAPABLE OF ADDING TIME INFORMATION TO DATA OBTAINED VIA NETWORK - According to one embodiment, a memory system includes a non-volatile semiconductor memory device, a control unit, a memory, an extension register, and a timer. The control unit controls the non-volatile semiconductor memory device. The memory as a work area is connected to the control unit. The extension register is provided in the memory and time information is set therein. The timer updates the time information. When the control unit records a file obtained via a network in the non-volatile semiconductor memory device, the control unit adds the time information updated by the timer to the file. | 08-16-2012 |
20120210046 | MEMORY SYSTEM ALLOWING HOST TO EASILY TRANSMIT AND RECEIVE DATA - According to one embodiment, a memory system includes a non-volatile semiconductor memory device, a control unit, a memory as a work area, a wireless communication module, and an extension register. The control unit controls the non-volatile semiconductor memory device. The extension register is provided in the memory and has a data length by which a wireless communication function of the wireless communication module can be defined. The control unit causes the non-volatile semiconductor memory device to store, as a file, an HTTP request supplied from a host, causes the extension register, based on a first command supplied from the host, to register an HTTP transmission command transmitted together with the first command, and causes the wireless communication module to transmit the HTTP request stored in the non-volatile semiconductor memory device based on the transmission command registered in the extension register. | 08-16-2012 |
20120221770 | MEMORY SYSTEM CAPABLE OF PROHIBITING ACCESS TO APPLICATION SOFTWARE AND SYSTEM SOFTWARE - According to one embodiment, a memory system includes an application module, a storage module, and a control module. The storage module stores user data, application software configured to control operation of the application module, and management information used to manage the user data and the application software. The control module controls writing and erasing of the storage module. The control module masks information indicating an access-prohibited area included in the management information read from the storage module, the access-prohibited area includes the application software. | 08-30-2012 |
20130272284 | MEMORY DEVICE AND WIRELESS COMMUNICATION CONTROL METHOD OF THE SAME - According to one embodiment, a memory device includes a nonvolatile semiconductor memory, a control unit and a wireless communication unit. The control unit controls the nonvolatile semiconductor memory. The wireless communication unit includes a wireless communication function and is controlled by the control unit. The control unit includes a first control mode to control the wireless communication unit in accordance with set information when a control command to control the wireless communication unit is not received within a predetermined time. The control unit includes a second control mode to control the wireless communication unit in accordance with the control command when the control command is received within the predetermined time. | 10-17-2013 |
20130318282 | MEMORY SYSTEM CAPABLE OF CONTROLLING WIRELESS COMMUNICATION FUNCTION - According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, controller, memory, wireless communication function section, and extension register. The controller controls the nonvolatile semiconductor memory device. The memory is serving as a work area of the controller. The wireless communication module has a wireless communication function. The extension register is provided in the memory. The controller processes a first command to read data from the extension register, and a second command to write data to the extension register. The extension register records, an information specifying the type of the wireless communication function in a specific page, and an address information indicating a region on the extension register to which the wireless communication function is assigned. | 11-28-2013 |
Patent application number | Description | Published |
20080292224 | Plastic Pouch and Manufacturing Method Therefor - At least one of an obverse surface film and reverse surface film, which are used to together constitute a plastic pouch, is folded back across the entire width of the plastic pouch, and peripheral edge portions of the pouch are heat-sealed, to thereby form, on at least one position, a folded-back section communicating with the body of the pouch. | 11-27-2008 |
20090314773 | PACKAGING POUCH FOR MICROWAVE OVEN - Provided is a packaging pouch for a microwave oven, provided with a steam releasing seal portion having a weakened portion, in which no clogging occurs in the steam releasing seal portion at the time of heat-cooking in a microwave oven, and any clogging occurred can be automatically eliminated. In the present invention, hermetic sealing is effected through heat sealing of a plastic film, and at least one steam releasing seal portion having a weakened portion is provided, with a width of the weakened portion gradually increasing from a forward end portion thereof to be opened toward a rear end portion thereof. | 12-24-2009 |
Patent application number | Description | Published |
20090185947 | SILICON ALLOY, ALLOY POWDER THEREOF, MANUFACTURING APPARATUS, MANUFACTURING PROCESS AND SINTERED ALLOY THEREOF - A controlled combustion synthesis apparatus comprises an ignition system, a pressure sensor for detecting internal pressure, a nitrogen supply, a gas pressure control valve for feeding nitrogen and exhausting reaction gas, means for detecting the internal temperature of the reaction container, a water cooled jacket, and a cooling plate. A temperature control system controls the temperature of the reaction container by controlling the flow of cooling water supplied to the jacket and the cooling plate in response to the detected temperature. By combustion synthesizing, while controlling the internal pressure and temperature, the apparatus can synthesize a silicon alloy including 30-70 wt. % silicon, 10-45 wt. % nitrogen, 1-40 wt. % aluminum, and 1-40 wt % oxygen. | 07-23-2009 |
20110052440 | MANUFACTURE OF SINTERED SILICON ALLOY - Dehydration and drying of a silicon alloy argil which uses water as a principal binder are carried out by a freeze-drying process, a microwave irradiation process, or a combination thereof. In the freeze-drying process, the shaped compact is put into a cooling medium within 5 minutes after completion of shape forming, retained therein for at least 5 minutes to quick-freeze water within the compact while the water is still in a finely-dispersed condition. The compact is exposed to a pressure below the triple point pressure of water. In the microwave irradiation process, the shaped compact is put into a container exposed to continuous microwave irradiation at 2.450 GHz for at least 5 minutes while under a reduced pressure below atmospheric pressure. | 03-03-2011 |
20110105297 | DUPLEX EUTECTIC SILICON ALLOY, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SINTERED COMPACT USING SILICON ALLOY POWDER - A duplex eutectic silicon alloy including 30-70 weight % silicon, 10-45 weight % nitrogen, 1-40 weight % aluminum, and 1-40 weight % oxygen has a eutectic structure comprising a β′-sialon phase and an ο′-sialon phase. The alloy is produced by controlling cooling at a rate of 50° C. or less per minute in combustion synthesis. A ductile sintered product capable of replacing steel in various applications can be produced by placing a compact composed of a powder of the alloy in a sintering furnace which can supply a heat quantity at least ten times the heat capacity of the compact; and sintering the compact at a pressure at least as great as atmospheric pressure, within a nitrogen atmosphere in which the silicon gas mole fraction is 10% or more, and at a temperature within the range from 1400° C. to 1700° C. | 05-05-2011 |