Patent application number | Description | Published |
20100123656 | METHOD AND DEVICE FOR INPUTTING FORCE INTENSITY AND ROTATION INTENSITY BASED ON MOTION SENSING - Provided is an input device for operating in a three-dimensional space and inputting user instructions. The input device includes a first operation unit that calculates a first rotation angle in a coordinate system independent of the attitude of the device based on the output value of a first sensor, a second operation unit that calculates a second rotation angle in the coordinate system based on the output value of a second sensor, an attitude angle measuring unit that calculates the attitude angle of the input device by combining the first rotation angle and the second rotation angle, and an intensity calculation unit that calculates force intensity in the coordinate system using acceleration of the input device and the attitude angle of the input device obtained in the attitude measuring unit. | 05-20-2010 |
20100123660 | METHOD AND DEVICE FOR INPUTTING A USER'S INSTRUCTIONS BASED ON MOVEMENT SENSING - Provided is a user instruction input device operating in a three-dimensional space. The user instruction input device includes a first sensor that senses the angular rate of the device centering on at least one axis, a second sensor that senses the acceleration of the device at least for one direction, and a processing unit that calculates a first rotation angle in a coordinate system independent of the attitude of the first device from the output value of the first sensor, calculates a second rotation angle in the coordinate system from the output value of the second sensor, and calculates the final attitude angle by combining the first rotation angle and the second rotation angle. | 05-20-2010 |
20110122062 | MOTION RECOGNITION APPARATUS AND METHOD - Provided are a motion recognition apparatus and method, and more particularly, a motion recognition apparatus and method which are employed to move a pointer only when intended by a user using a touch sensor included in a pointing device that moves the pointer according to a motion sensed by a motion sensor. | 05-26-2011 |
Patent application number | Description | Published |
20080231404 | INTEGRATED TYPE TRANSFORMER - There is provided an integrated type transformer that reduces the volume by integrating a plurality of transformers transmitting power for driving a plurality of lamps in an inverter circuit for an LCD into one transformer structure. An integrated type transformer according to an aspect of the invention includes a bobbin unit including a bobbin body having a predetermined length and a through hole therein in a longitudinal direction of the bobbin unit, and a core unit including an inner core inserted into the through hole of the bobbin unit, and an outer core formed along one surface in the longitudinal direction among outer circumferential surfaces of the bobbin unit and electromagnetically coupled to the inner core to form one magnetic path. | 09-25-2008 |
20090021179 | BACKLIGHT DRIVING SYSTEM FOR LIQUID CRYSTAL DISPLAY - There is provided a backlight driving system for a liquid crystal display that can reduce size and weight of a product because a DC-DC converter is not used when commercial AC power is converted into lamp driving power. A backlight driving system for a liquid crystal display according to an aspect of the invention includes a power supply unit converting commercial alternating current (AC) power into direct current (DC) power having a voltage level set beforehand, an inverter unit converting the DC power from the power supply unit into AC power at a one-to-one conversion ratio set beforehand, a boosting unit boosting the AC power from the inverter unit into lamp lighting power set beforehand; and a lamp group receiving the lamp lighting power from the boosting unit to emit light. | 01-22-2009 |
20090243388 | MULTI-OUTPUT DC/DC CONVERTER - Disclosed is a multi-output DC/DC converter controlling power-conversion switching in synchronization with a frequency of one output voltage among multiple output voltages in an LLC resonant DC/DC converter. The multi-output DC/DC converter includes a power conversion circuit performing alternate switching on an input DC voltage to output multiple DC voltages including a first DC voltage and a second DC voltage each having a preset voltage level, and a control circuit controlling the alternate switching of the power conversion circuit in synchronization with a preset resonant frequency. | 10-01-2009 |
20090251120 | HIGH VOLTAGE POWER SUPPLY - There is provided a high voltage power supply capable of reducing voltage stress of a voltage multiplying device. The high voltage power supply includes: a power converter switching on/off and converting an input direct current power into a direct current power having a preset voltage level; and a voltage multiplier including a first multiplying cell multiplying the voltage level of the direct current power from the power converter, wherein the first multiplying cell includes: first and second capacitors charging the direct current power from the power converter, respectively; a first diode providing a path for transferring the direct current power when the power converter is switched off; and a second diode providing a path for transferring the direct current power when the power converter is switched on. | 10-08-2009 |
Patent application number | Description | Published |
20090200565 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including Al | 08-13-2009 |
20100155699 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer. | 06-24-2010 |
20110012145 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including Al | 01-20-2011 |
20120261687 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer. | 10-18-2012 |
Patent application number | Description | Published |
20130244353 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer. | 09-19-2013 |
20130255578 | CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR - A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate. | 10-03-2013 |
20140235005 | METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREWITH - A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration. | 08-21-2014 |
20150207034 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency. | 07-23-2015 |