Patent application number | Description | Published |
20100195180 | DEFLECTING MIRROR FOR DEFLECTING AND SCANNING LIGHT BEAM - The deflecting mirror includes a fixed base member; a mirror having a reflection surface; a support member swingably supporting the mirror; a pair of driving beam members, each having a first end connected with the fixed base member and a second end connected with the support member to support the support member from both sides; and a piezoelectric member fixed to each driving beam member and extending from the first or second end of each driving beam member while having length not longer than about half the length of the driving beam member. The piezoelectric member and the driving beam members constitute piezoelectric unimorph or bimorph structure. By applying voltage to the piezoelectric member, the driving beam members are driven at the same time in the same direction, thereby vibrating the support member in a direction perpendicular to the reflection surface of the mirror, resulting in swinging of the mirror. | 08-05-2010 |
20100309536 | OPTICAL DEFLECTOR, OPTICAL SCANNER, IMAGE FORMING APPARATUS, AND IMAGE PROJECTOR - An optical deflector, including a fixed base; a mirror having a light reflection surface; a pair of elastic support members oscillatably supporting the mirror; and a pair of drive beams formed of a beam-shaped member on which a piezoelectric is fixed, wherein the elastic support members and the drive beams in longitudinal directions are almost orthogonally located and connected with each other, other ends of the drive beams are fixed on the fixed base, the mirror and the pair of elastic support members are cantilevered by the pair of drive beams relative to the fixed base, and bending oscillation of the drive beams causes torsional deformation of the elastic members to rotationally oscillate the mirror. | 12-09-2010 |
Patent application number | Description | Published |
20090014824 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND CAMERA HAVING THE DEVICE - Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses. | 01-15-2009 |
20110074991 | SOLID-STATE IMAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - Light shielding films for preventing color mixture are disposed between Green filters | 03-31-2011 |
20110217808 | SOLID-STATE IMAGING DEVICE HAVING IMPROVED SENSITIVITY AND REDUCED FLARE - Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses. | 09-08-2011 |
20110284980 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to an aspect of the present invention includes: a first photodiode and a second photodiode; a first optical waveguide formed above the first photodiode; a second optical waveguide formed above the second photodiode; a first color filter which is formed above the first optical waveguide and transmits mainly light having a first wavelength; a second color filter which is formed above the second optical waveguide and transmits mainly light having a second wavelength; a first microlens formed above the first color filter; and a second microlens formed above the second color filter, wherein the first wavelength is longer than the second wavelength, and the first optical waveguide has a first width smaller than a second width of the second optical waveguide, the first and second widths being in a direction parallel to the semiconductor substrate. | 11-24-2011 |
20120012961 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING OF SAME - A solid-state imaging device ( | 01-19-2012 |
Patent application number | Description | Published |
20080267672 | DEVELOPING DEVICE, IMAGE SUPPORTER UNIT, AND IMAGE FORMATION APPARATUS - A developing device includes: a developer supporter that includes: a magnet member that has a plurality of magnetic poles; and a cylinder member; and a thickness regulation member wherein, of the plurality of the magnetic poles, a magnetic pole, which is placed at a position nearest to the thickness regulation member downstream in a rotation direction of the cylinder member from the thickness regulation member, has a maximum position of a normal magnetic flux density distribution, and the maximum position is placed outside the area of angle α downstream in the rotation direction of the cylinder member from the thickness regulation member, and wherein the diameter of the cylinder member is D, the projection width is W in a case where the thickness regulation member is projected onto the surface of the cylinder member, and the angle α is 180×W/(D×π). | 10-30-2008 |
20080279594 | DEVELOPER SUPPLY CONTAINER AND IMAGE FORMING APPARATUS - A developer supply container includes a container body, a developer conveyance member, and a clog prevention member. The container body includes an outlet port and contains and contains developer therein. The developer conveyance member includes a rotational shaft and a conveyance-member body. The conveyance-member body is supported by the rotational shaft and has flexibility. The developer conveyance member is disposed in the container body and conveys the developer to the outlet port for discharge. The clog prevention member is formed in the conveyance-member body in a position corresponding to the outlet port. The clog prevention member goes into the outlet port to protrude to outside of the container body as the rotational shaft rotates. | 11-13-2008 |
20100247151 | DEVELOPING UNIT AND IMAGE FORMING APPARATUS - A developing unit including a retainer receiving portion for receiving a developer retainer, a first agitation portion adjacent to the retainer receiving portion, a second agitation portion adjacent to the first agitation portion, a first conveyance member received in the first agitation portion and conveying a developer in the first agitation portion in a first conveyance direction, a second conveyance member received in the second agitation portion and conveying a developer in the second agitation portion in a second conveyance direction reverse to the first conveyance direction, and a magnetic member disposed between the second conveyance member and the developer retainer and having magnetism. | 09-30-2010 |
Patent application number | Description | Published |
20140363682 | SURFACE MODIFIER AND ARTICLE - The invention provides a surface modifier comprising an organosilicon-containing fluoropolymer compound having formula (1), a hydrolyzate thereof, or a partial hydrolytic condensate thereof. When an article is treated the surface modifier, the surface modifier forms thereon a coating having water/oil repellency and quick water slip as well as UV resistance, heat resistance, and chemical resistance. | 12-11-2014 |
20150191629 | SURFACE MODIFIER AND ARTICLE - A surface modifier comprising an organosilicon-containing fluoropolymer having formula (1), partial hydrolyzate or hydrolytic condensate thereof is provided. In formula (1), Rf is perfluoroalkyl, OA is OCF | 07-09-2015 |
20150274888 | FLUOROPOLYETHER-CONTAINING POLYMER - A fluoropolyether-containing polymer of formula (1) is novel wherein Rf is a polymer residue containing a monovalent fluorooxyalkyl or divalent fluorooxyalkylene group, Z is a divalent hydrocarbon group, and α is 1 or 2. The polymer may be converted into a fluoropolyether-containing polymer-modified silane, which forms a water/oil repellent coating having weatherability. | 10-01-2015 |
20150274889 | FLUOROPOLYETHER-CONTAINING POLYMER-MODIFIED SILANE, SURFACE TREATING AGENT, AND ARTICLE - A fluoropolyether-containing polymer-modified silane having (1) is provided wherein Rf is a fluorooxyalkyl or fluorooxyalkylene-containing polymer residue, Y is a divalent to hexavalent hydrocarbon group, R is C | 10-01-2015 |
20150275035 | FLUOROCHEMICAL COATING COMPOSITION AND ARTICLE TREATED THEREWITH - A fluorochemical coating composition is provided comprising (A) a hydrolyzable group-containing silane modified with a fluorooxyalkylene-containing polymer and (B) a fluorooxyalkylene-containing polymer having an average molecular weight not higher than the average molecular weight of component (A) in a weight ratio (A)/(B) of 40/60 to 95/5. The composition forms on a substrate a water/oil repellent layer which does not detract from the visibility of the substrate. | 10-01-2015 |
20150275046 | FLUOROCHEMICAL COATING COMPOSITION AND ARTICLE TREATED THEREWITH - A fluorochemical coating composition is provided comprising (A) a hydrolyzable group-containing silane modified with a fluoropolyether-containing polymer and (B) a hydrolyzable group-containing silane modified with a fluoropolyether-polysiloxane copolymer in a weight ratio (A)/(B) of 40/60 to 95/5. The composition forms on a substrate a water/oil repellent layer which does not detract from the visibility of the substrate. | 10-01-2015 |
Patent application number | Description | Published |
20080197392 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device has bit lines, capacitors, bit contacts and capacitor contacts, wherein the bit lines are provided over a semiconductor substrate, the bit lines are connected to the semiconductor substrate through the bit contacts, the capacitors are connected to the semiconductor substrate through the capacitor contacts, and wherein in two adjacent bit lines, pitch d | 08-21-2008 |
20080310241 | Semiconductor memory device having memory cell and reference cell connected to same sense amplifier and method of reading data thereof - A semiconductor memory device includes a sense amplifier, first and second bit lines connected to the sense amplifier, a first reference cell connected to the first bit line, and a second reference cell connected to the second bit line. A reference potential is simultaneously written to the first and second reference cells. Further, a dummy cell may be provided to be simultaneously, with the reference cell, with the reference potential. | 12-18-2008 |
20090159978 | SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING SAME - A semiconductor device | 06-25-2009 |
20100078734 | Method of manufacturing semiconductor device having plural transistors formed in wellregion and semiconductor device - A first transistor and a second transistor are formed in a first element formation region, and a third transistor is formed in a second element formation region. The three transistors are of the same conductive type, and the first transistor and the second transistor have the same threshold voltage. A first well is formed in the first element formation region by use of a first mask pattern, and a second well is formed in the second element formation region by use of a second mask pattern. A channel region of the first transistor and a channel region of the second transistor have a shape which is line-symmetrical with respect to a reference line. The first mask pattern has a shape which is line-symmetrical with respect to the reference line. | 04-01-2010 |
20110263113 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device | 10-27-2011 |
20120168876 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING PLURAL TRANSISTORS FORMED IN WELL REGION AND SEMICONDUCTOR DEVICE - A semiconductor device, includes a substrate, an element isolating film formed in the substrate, a first element formation region isolated by the element isolating film, a second element formation region positioned adjacent to the first element formation region and isolated by the element isolating film, a first well of a second conductive type formed in a whole area of the first element formation region, a first transistor of a first conductive type formed on the first element formation region, a second transistor of the first conductive type which is formed on the first element formation region and whose threshold voltage is the same as a threshold voltage of the first transistor, a second well of the second conductive type formed in a whole area of the second element formation region, and a third transistor of the first conductive type formed on the second element formation region. | 07-05-2012 |
20130285203 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention is directed to a semiconductor integrated circuit device that basically has a non-memory array area, a memory array area, and memory capacitors formed across lower embedded metal interconnection layers including a low-dielectric constant interlayer insulating film in the memory array area. In addition, a memory-periphery metal seal ring is provided in the lower embedded metal interconnection layers having at least the low-dielectric constant interlayer insulating film so as to surround the memory array area. | 10-31-2013 |