Patent application number | Description | Published |
20100045326 | THERMAL MONITORING AND MANAGEMENT OF INTEGRATED CIRCUITS - The invention, in one aspect, provides a semiconductor device ( | 02-25-2010 |
20110195544 | SOLDER BUMP STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURE THEREFOR - The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening. | 08-11-2011 |
20120020028 | STACKED INTERCONNECT HEAT SINK - An electronic device includes an integrated circuit and a heat spreader. The integrated circuit includes a substrate with an active via located therein. The heat spreader includes a thermally conductive core. The active via is connected to a corresponding heat spreader via that passes through the thermally conductive core. | 01-26-2012 |
20120153430 | INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS INTO INTEGRATED CIRCUIT DESIGNS - A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously. | 06-21-2012 |
20120153492 | METHOD OF FABRICATION OF THROUGH-SUBSTRATE VIAS - A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material. | 06-21-2012 |
20130155207 | SYSTEM AND METHOD FOR AUTOMATICALLY CONTROLLING A VIDEO PRESENTATION - A system for, and method of automatically controlling a video presentation and 3D glasses incorporating the system or the method. In one embodiment, the system is configured to sense whether a viewer is wearing glasses and transmit a signal to the video source if the viewer is not wearing the glasses. In another embodiment, the system is configured to sense whether the viewer is watching the video presentation and transmit a signal to the video source if the viewer is not watching the video presentation. | 06-20-2013 |
20130280864 | STACKED INTERCONNECT HEAT SINK - A heat spreader that is configured to be attached to an integrated circuit substrate. The heat spreader includes a thermally conductive core and a heat spreader via that passes through the thermally conductive core. A connection point of the thermally conductive core is configured to form a solder connection to an integrated circuit substrate plug. | 10-24-2013 |
20140015127 | CONTACT SUPPORT PILLAR STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURE THEREFORE - In one aspect, there is provided a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and has a contact support pillar opening formed therein. Contact support pillars that comprise a conductive metal and have a metal extension are located within the opening of the passivation layer. | 01-16-2014 |
20140220760 | INTEGRATION OF SHALLOW TRENCH ISOLATION AND THROUGH-SUBSTRATE VIAS INTO INTEGRATED CIRCUIT DESIGNS - A method of manufacturing an IC, comprising providing a substrate having a first side and a second opposite side, forming a STI opening in the first side of the substrate and forming a partial TSV opening in the first side of the substrate and extending the partial TSV opening. The extended partial TSV opening is deeper into the substrate than the STI opening. The method also comprises filling the STI opening with a first solid material and filling the extended partial TSV opening with a second solid material. Neither the STI opening, the partial TSV opening, nor the extended partial TSV opening penetrate an outer surface of the second side of the substrate. At least either: the STI opening and the partial TSV opening are formed simultaneously, or, the STI opening and the extended partial TSV opening are filled simultaneously. | 08-07-2014 |
20140253222 | PREVENTING ELECTRONIC DEVICE COUNTERFEITS - Systems and methods for authenticating electronic devices may perform one or more operations including, but not limited to: receiving at least one code associated with an authorization to perform one or more manufacturing life-cycle operations for at least one electronic device; and blowing one or more fuses of the at least one electronic device according to the at least one code associated with an authorization to perform one or more manufacturing life-cycle operations for the at least one electronic device. | 09-11-2014 |