Patent application number | Description | Published |
20120312590 | METHOD OF MANUFACTURING MULTILAYER WIRING SUBSTRATE, AND MULTILAYER WIRING SUBSTRATE - Disclosed is a method of manufacturing a multilayer wiring substrate having a principal plane of the substrate and a rear plane thereof, having a structure such that a plurality of resin insulating layers and a plurality of conductor layers are laminated, and a plurality of chip component connecting terminals to which chip components are connectable are disposed on the principal plane of the substrate. This method has a feature including a plating layer forming process in which product plating layers which provide the plurality of chip component connecting terminals and a dummy plating layer on the surrounding of the product plating layers are formed on the surface of an exposed outermost resin insulating layer at the principal plane of the substrate. This method permits a thickness dispersion of the chip component connecting terminals to be suppressed and permits a connection reliability thereof to the chip components to be increased. | 12-13-2012 |
20130111746 | METHOD OF MANUFACTURING MULTILAYER WIRING SUBSTRATE - A method of manufacturing a multilayer wiring substrate includes: a first laminate structure formation step of forming a first laminate structure on a support substrate, the first laminate structure including at least one conductor layer and at least one resin insulation layer; a core substrate formation step of laminating a core substrate on the first laminate structure such that a lower main surface of the core substrate comes in contact with the first laminate structure, the core substrate having a metal layer provided on an upper main surface thereof; and a second laminate structure formation step of forming a second laminate structure on the core substrate such that the second laminate structure covers the metal layer, the second laminate structure including at least one conductor layer and at least one resin insulation layer. | 05-09-2013 |
20130160290 | METHOD OF MANUFACTURING MULTI-LAYER WIRING BOARD - Embodiments of the presently-disclosed subject matter include a first laminated structure in which at least one conductor layer and at least one resin insulating layer are alternately formed is formed on a supporting substrate, and a core substrate is formed so as to come into contact with the conductor layer which is the uppermost layer of the first laminated structure. Then, laser light is emitted to the core substrate to form a through hole and a metal layer is formed in the through hole. Then, a second laminated structure including at least one conductor layer and at least one resin insulating layer is formed on the core substrate. At that time, the thickness of the conductor layer which is the uppermost layer of the first laminated structure is greater than that of the other conductor layers. | 06-27-2013 |
20130161079 | MULTI-LAYER WIRING SUBSTRATE AND MANUFACTURING METHOD THEREOF - Embodiments of the presently-disclosed subject matter include a multilayer wiring substrate including a first laminated structure that includes at least one conductive layer and at least one resin insulating layer; a core substrate that includes a reinforced fiber and that is laminated on the first laminated structure; and a second laminated structure that includes at least one conductive layer and at least one resin insulating layer and that is formed on the core substrate; and a plurality of via conductors which penetrate the first laminated structure, the core substrate, and the second laminated structure in the thickness direction, wherein the plurality of via conductors all expand in diameter in one direction, and the reinforced fiber is located above a center of the core substrate in the thickness direction. | 06-27-2013 |
Patent application number | Description | Published |
20090290430 | Method And Apparatus For Reading And Programming A Non-Volatile Memory Cell In A Virtual Ground Array - A method and apparatus for dynamic programming and dynamic reading of a select non-volatile memory cell in a virtual grounds array is disclosed. The array of non-volatile memory cells are arranged in a plurality of rows and columns, wherein each cell in the same column share a first local bit line to one side and share a second local bit line to another side. Alternating local bit lines are connected to a first global bit line and other alternating local bit lines are connected to a second global bit line with the global bit lines connected to a sense amplifier. In the dynamic read operation the global bit lines and the associated local bit lines are connected to a precharged voltage. One of the first or second global bit lines is connected to a low voltage such as ground, wherein the one global bit line connected to ground also connects to the local bit line for sensing the select non-volatile memory cell. The state of the select non-volatile memory cell is detected by detecting the sense amplifier connected to the global bit line, other than the one global bit line. In a dynamic programming operation, the first and second global bit lines and their associated local bit lines are precharged to a first voltage. One of the first or second global bit line and its associated local bit lines is connected to a second voltage, wherein the associated local bit lines of the one global bit line include a select bit line connected to a programming terminal of the select non-volatile memory cell. The voltage differential between the second voltage and the first voltage is insufficient to cause programming of the select non-volatile memory cell. The bit line, other than the select bit line of the select non-volatile memory cell, is connected to a low voltage such as ground. The voltage differential between the second voltage and ground is sufficient to cause programming of the select non-volatile memory cell. In another embodiment of the programming operation, a local bit line connected to a programming terminal of a select non-volatile memory cell is precharged to a first voltage and then boosted to a programming voltage by precharging an adjacent local bit line. | 11-26-2009 |
20100039864 | METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE - Methods and apparatus are disclosed, such as those involving a flash memory device that includes a memory block. The memory block includes a plurality of data lines extending substantially parallel to one another, and a plurality of memory cells. One such method includes erasing the memory cells; and performing erase verification on the memory cells. The erase verification includes determining one memory cell by one memory cell whether the individual memory cells coupled to one of the data lines have been erased. The method can also include performing a re-erase operation that selectively re-erases unerased memory cells based at least partly on the result of the erase verification. | 02-18-2010 |
20100046300 | REDUCTION OF QUICK CHARGE LOSS EFFECT IN A MEMORY DEVICE - Methods for reducing quick charge loss effects, methods for programming, memory devices, memory devices, and memory systems are disclosed. In one such method, a programming pulse is applied to the word line to increase the threshold voltage of the memory cells being programmed. A negative voltage pulse is applied to the word line after the programming pulse to force any electrons trapped in the tunnel oxide of memory cells being programmed back into the tunnel region. After the negative pulse, a program verify operation is performed. | 02-25-2010 |
20110032761 | METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE - Methods and apparatus are disclosed, such as those involving a flash memory device that includes a memory block. The memory block includes a plurality of data lines extending substantially parallel to one another, and a plurality of memory cells. One such method includes erasing the memory cells; and performing erase verification on the memory cells. The erase verification includes determining one memory cell by one memory cell whether the individual memory cells coupled to one of the data lines have been erased. The method can also include performing a re-erase operation that selectively re-erases unerased memory cells based at least partly on the result of the erase verification. | 02-10-2011 |
20120008409 | REDUCTION OF QUICK CHARGE LOSS EFFECT IN A MEMORY DEVICE - Methods for reducing quick charge loss effects, methods for programming, memory devices, memory devices, and memory systems are disclosed. In one such method, a programming pulse is applied to the word line to increase the threshold voltage of the memory cells being programmed. A negative voltage pulse is applied to the word line after the programming pulse to force any electrons trapped in the tunnel oxide of memory cells being programmed back into the tunnel region. After the negative pulse, a program verify operation is performed. | 01-12-2012 |
Patent application number | Description | Published |
20090067235 | Test circuit and method for multilevel cell flash memory - A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system. | 03-12-2009 |
20090073770 | Independent Bi-Directional Margin Control Per Level And Independently Expandable Reference Cell Levels For Flash Memory Sensing - A memory system includes reference level generators that may provide programmable margins, and programmable verify voltage levels. The reference levels may be shifted within a range of voltages with varying differences between reference voltage levels and with different margins and verify levels. | 03-19-2009 |
20090096507 | Integrated Semiconductor Metal-Insulator-Semiconductor Capacitor - An integrated MIS capacitor has two substantially identical MIS capacitors. A first capacitor comprises a first region of a first conductivity type adjacent to a channel region of the first conductivity type in a semiconductor substrate. The semiconductor substrate has a second conductivity type. A gate electrode is insulated and spaced apart from the channel region of the first capacitor. The second capacitor is substantially identical to the first capacitor and is formed in the same semiconductor substrate. The gate electrode of the first capacitor is electrically connected to the first region of the second capacitor and the gate electrode of the second capacitor is electrically connected to the first region of the first capacitor. In this manner, the capacitors are connected in an anti-parallel configuration. A capacitor which has high capacitance densities, low process complexity, ambipolar operation, low voltage and temperature coefficient, low external parasitic resistance and capacitance and good matching characteristics for use in analog designs that can be integrated with existing semiconductor processes results. | 04-16-2009 |
20090303803 | Independent Bi-Directional Margin Control Per Level and Independently Expandable Reference Cell Levels for Voltage Mode Sensing - A memory system includes reference level generators that may provide programmable margins, and programmable verify voltage levels. The reference levels may be shifted within a range of voltages with varying differences between reference voltage levels and with different margins and verify levels. | 12-10-2009 |
20100091567 | Test Circuit and Method for Multilevel Cell Flash Memory - A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system. | 04-15-2010 |
20110022905 | Test Circuit and Method for Multilevel Cell Flash Memory - A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system. | 01-27-2011 |