Saenger
Annette Saenger, Singapore SG
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20160111558 | PHOTOVOLTAIC CELLS HAVING A BACK SIDE PASSIVATION LAYER - A process for making a photovoltaic cell includes providing a semiconducting substrate having a back side passivation layer, and coating a self-assembling emulsion that includes glass frit particles onto the back side passivation layer. The emulsion is allowed to self-assemble into a network of traces that define cells. An electrode is formed over the network to create a precursor cell, which is then fired to cause the network to burn through the passivation layer and establish electrical contact between the semiconducting substrate and the electrode. | 04-21-2016 |
Annette Saenger, Dresden DE
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20080242097 | Selective deposition method - The invention refers to a selective deposition method. A substrate comprising at least one structured surface is provided. The structured surface comprises a first area and a second area. The first area is selectively passivated regarding reactants of a first deposition technique and the second area is activated regarding the reactants the first deposition technique. A passivation layer on the second area is deposited via the first deposition technique. The passivation layer is inert regarding a precursors selected from a group of oxidizing reactants. A layer is deposited in the second area using a second atomic layer deposition technique as second deposition technique using the precursors selected form the group of oxidizing reactants. | 10-02-2008 |
Erik Saenger, Zurich CH
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20100157732 | Time Reverse Reservoir Localization - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. These dynamic particle parameters are stored in a form for display. Maximum values of the dynamic particle parameters may be interpreted as reservoir locations. The dynamic particle parameters may be particle displacement values, particle velocity values, particle acceleration values or particle pressure values. The sensors may be three-component sensors. Zero-phase frequency filtering of different ranges of interest may be applied. The data may be resampled to facilitate efficient data processing. | 06-24-2010 |
20100161233 | Time Reverse Reservoir Localization - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. These dynamic particle parameters are stored in a form for display. Maximum values of the dynamic particle parameters may be interpreted as reservoir locations. The dynamic particle parameters may be particle displacement values, particle velocity values, particle acceleration values or particle pressure values. The sensors may be three-component sensors. Zero-phase frequency filtering of different ranges of interest may be applied. The data may be resampled to facilitate efficient data processing. | 06-24-2010 |
20100161234 | Time Reverse Reservoir Localization - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. These dynamic particle parameters are stored in a form for display. Maximum values of the dynamic particle parameters may be interpreted as reservoir locations. The dynamic particle parameters may be particle displacement values, particle velocity values, particle acceleration values or particle pressure values. The sensors may be three-component sensors. Zero-phase frequency filtering of different ranges of interest may be applied. The data may be resampled to facilitate efficient data processing. | 06-24-2010 |
20120014215 | Time reverse reservoir localization with borehole data - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. These dynamic particle parameters are stored in a form for display. Maximum values of the dynamic particle parameters may be interpreted as reservoir locations. The dynamic particle parameters may be particle displacement values, particle velocity values, particle acceleration values or particle pressure values. The sensors may be three-component sensors. Zero-phase frequency filtering of different ranges of interest may be applied. The data may be resampled to facilitate efficient data processing. | 01-19-2012 |
20120014216 | Time reverse reservoir localization - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. These dynamic particle parameters are stored in a form for display. Maximum values of the dynamic particle parameters may be interpreted as reservoir locations. The dynamic particle parameters may be particle displacement values, particle velocity values, particle acceleration values or particle pressure values. The sensors may be three-component sensors. Zero-phase frequency filtering of different ranges of interest may be applied. The data may be resampled to facilitate efficient data processing. | 01-19-2012 |
Erik Saenger, Wetzikon CH
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20110286305 | TIME REVERSE IMAGING OPERATORS FOR SOURCE LOCATION - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data propagation process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. Imaging conditions are applied to the dynamic particle parameters to obtain image values associated with subsurface energy source locations. | 11-24-2011 |
20120014214 | TIME REVERSE IMAGING OPERATORS FOR SOURCE LOCATION WITH BOREHOLE DATA - A method and system for processing synchronous array seismic data includes acquiring synchronous passive seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data propagation process is applied to the synchronized array measurements to obtain a plurality of dynamic particle parameters associated with subsurface locations. Imaging conditions are applied to the dynamic particle parameters to obtain image values associated with subsurface energy source locations. | 01-19-2012 |
Erik Hans Saenger, Zürich CH
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20090187347 | VH Signal Integration Measure for Seismic Data - A method and system of processing seismic data includes acquiring three-component seismic data and combining horizontal components of the three-component seismic data to obtain a merged horizontal component. Frequency spectra are determined for the acquired three-component seismic data. A ratio of a vertical component of the seismic data to the merged horizontal component is determined. A V/H integration-measure is obtained from the integration of the area bounded by a selected minimum-amplitude value and the amplitude values greater than the selected minimum-amplitude value and the V/H integration-measure is stored in a form for display. | 07-23-2009 |
Erik Hans Saenger, Zürich CH
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20080288173 | Seismic attributes for reservoir localization - A method and system for processing three component seismic data includes determining a covariance data matrix from three component seismic data for each of a plurality of time periods to obtain eigenvectors and eigenvalues. One or more seismic attributes are calculated from the eigenvectors and eigenvalues for each of a plurality of time periods. A stability measure is determined from the calculated seismic attribute for each of the plurality of time periods and stored for display. | 11-20-2008 |
20090175126 | FREQUENCY SHIFT RESERVOIR LOCALIZATION - A method and system of detecting and mapping a subsurface hydrocarbon reservoir includes acquiring seismic data having a plurality of components, applying a data transform to the seismic data to obtain seismic data spectral component maxima and maxima profiles, and recording the maxima or maxima profile in a form for display. | 07-09-2009 |
20090187347 | VH Signal Integration Measure for Seismic Data - A method and system of processing seismic data includes acquiring three-component seismic data and combining horizontal components of the three-component seismic data to obtain a merged horizontal component. Frequency spectra are determined for the acquired three-component seismic data. A ratio of a vertical component of the seismic data to the merged horizontal component is determined. A V/H integration-measure is obtained from the integration of the area bounded by a selected minimum-amplitude value and the amplitude values greater than the selected minimum-amplitude value and the V/H integration-measure is stored in a form for display. | 07-23-2009 |
20120116682 | ENERGY DENSITY AND STRESS IMAGING CONDITIONS FOR SOURCE LOCALIZATION AND CHARACTERIZATION - A method and system for processing synchronous array seismic data includes acquiring synchronous seismic data from a plurality of sensors to obtain synchronized array measurements. A reverse-time data propagation process is applied to the synchronized array measurements to obtain dynamic particle parameters associated with subsurface locations. A maximum energy density imaging condition is applied to the dynamic particle parameters to obtain imaging values associated with subsurface locations. Subsurface positions of energy sources are located from the relative maximum of a plurality of the imaging values associated with subsurface locations. | 05-10-2012 |
Heike Saenger, Neukirchen-Viyn DE
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20090220441 | Nanoparticulate UV Protectant With Silicon Dioxide Coating - The present invention relates to nanoparticulate UV protectants which are obtainable by hydrothermal treatment of a nanoparticulate metal oxide and subsequent application of a silicon dioxide coating, and to the preparation and use thereof. The present invention furthermore relates to novel compositions, in particular for topical application, which are intended, in particular, for light protection of the skin and/or of the hair against UV radiation, and to the use thereof in the above-mentioned cosmetic application. | 09-03-2009 |
Ingo Saenger, Heidenheim DE
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20100165318 | ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The disclosure concerns an illumination system of a microlithographic projection exposure apparatus. The illumination system includes a mirror arrangement which has a plurality of mirror units and at least one element arranged in front of the mirror arrangement in the light propagation direction to produce at least two different states of polarization incident on different mirror units. The mirror units are displaceable independently of each other for altering an angle distribution of the light reflected by the mirror arrangement. | 07-01-2010 |
20110149261 | OPTICAL SYSTEM, IN PARTICULAR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - An optical system, in particular of a microlithographic projection exposure apparatus, includes an optical system axis and a polarization-influencing optical arrangement, wherein said arrangement has a polarization-influencing optical element which includes an optically active material having an optical crystal axis and is of a thickness profile which varies in the direction of said optical crystal axis, and a position manipulator for manipulation of the position of said polarization-influencing optical element, wherein the polarization manipulator is adapted to cause rotation of the polarization-influencing optical element about an axis of rotation, wherein said axis of rotation is arranged at an angle of 90°±5° relative to the optical system axis. | 06-23-2011 |
20110194093 | POLARIZATION-INFLUENCING OPTICAL ARRANGEMENT AND AN OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A polarization-influencing optical arrangement includes a pair, which includes a first lambda/2 plate and a second lambda/2 plate. The first and second lambda/2 plates partially overlap each other forming an overlap region and at least one non-overlap region. | 08-11-2011 |
20130077077 | OPTICAL SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND MICROLITHOGRAPHIC EXPOSURE METHOD - An optical system for a microlithographic projection exposure apparatus and a microlithographic exposure method are disclosed. In an embodiment an optical system for a microlithographic projection exposure apparatus includes at least one mirror arrangement having a plurality of mirror elements which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement. The optical system also includes at least one manipulator downstream of the mirror arrangement in the light propagation direction. The manipulator has a raster arrangement of manipulator elements so that light incident on the manipulator during operation of the optical system is influenced differently in its polarization state and/or in its intensity in dependence on the incidence location. | 03-28-2013 |
20130271741 | Optical system, in particular of a microlithographic projection exposure apparatus - The invention relates to an optical system, in particular of a microlithographic projection exposure apparatus, with a polarization-influencing optical arrangement ( | 10-17-2013 |
20140111785 | ILLUMINATION OPTICAL UNIT FOR PROJECTION LITHOGRAPHY - An illumination optical unit for projection lithography has a first polarization mirror device to reflect and polarize of illumination light. A second mirror device, which is disposed downstream of the polarization mirror device reflects an illumination light beam. At least one drive device is operatively connected to at least one of the two mirror devices. The two mirror devices are displaceable relative to one another via the drive device between a first relative position, which leads to a first beam geometry of the illumination light beam after reflection at the second mirror device, and a second relative position, which leads to a second beam geometry of the illumination light beam after reflection at the second mirror device, which is different from the first beam geometry. This results in a flexible predefinition of different illumination geometries, in particular of different illumination geometries with rotationally symmetrical illumination. | 04-24-2014 |
20140132942 | OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC EXPOSURE - The disclosure relates to optical systems of a microlithographic projection exposure apparatus, and to a microlithographic exposure method. According to an aspect of the disclosure, an optical system has a light source, a ray-splitting optical element, which splits a light ray incident on this element when the projection exposure apparatus is in operation into a first partial ray and a second partial ray, with the first and the second partial ray having mutually orthogonal polarization directions, and at least one ray-deflecting optical element for generating a desired polarized illumination setting from the first partial ray and the second partial ray, wherein the ray-splitting optical element is arranged such that light incident on this ray-splitting optical element when the projection exposure apparatus is in operation has a degree of polarization of less than one. | 05-15-2014 |
20140168739 | OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The invention relates to an optical system of a microlithographic projection exposure apparatus, comprising a mirror arrangement having a plurality of mirror elements which are adjustable independently of one another for the purpose of changing an angular distribution of the light reflected by the mirror arrangement, a polarization-influencing optical arrangement having at least one polarization-influencing component, wherein, by displacing the polarization-influencing component, a degree of overlap between the polarization-influencing component and the mirror arrangement can be set in a variable manner, and a deflection device having a respective reflection surface upstream and downstream of the mirror arrangement relative to the light propagation direction. | 06-19-2014 |
20140192339 | COLLECTOR - A collector for a projection exposure apparatus for microlithography comprises a plurality of reflective sections which are embodied and arranged in such a way that they can be impinged upon during the focusing of radiation from a first focus into a second focus with angles of impingement in a predefined angular spectrum. | 07-10-2014 |
20140268085 | OPTICAL SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The invention relates to an optical system for a microlithographic projection exposure apparatus, comprising an optical system axis (OA) and a polarization-influencing optical arrangement, wherein the polarization-influencing optical arrangement comprises a first polarization-influencing element, which is produced from optically uniaxial crystal material and has a first orientation of the optical crystal axis, the-first orientation being perpendicular to the optical system axis and a thickness that varies in the direction of the optical system axis, and a second polarization-influencing element, which is arranged downstream of the first polarization-influencing element in the light propagation direction, is produced from optically uniaxial crystal material and has a second orientation of the optical crystal axis, the second orientation being perpendicular to the optical system axis, and a plane-parallel geometry, wherein the second orientation is different from the first orientation. | 09-18-2014 |
20140285788 | OPTICAL SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND MICROLITHOGRAPHIC EXPOSURE METHOD - The invention relates to an optical system for a microlithographic projection exposure apparatus, and to a microlithographic exposure method. An optical system for a microlithographic projection exposure apparatus comprises a polarization-influencing optical arrangement, wherein the polarization-influencing optical arrangement comprises at least one first array of first polarization-influencing elements and a second array of second polarization-influencing elements, wherein the first and second arrays are arranged successively in the light propogation direction, wherein the first and second polarization-influencing elements in each case have a birefringence that is dependent on the presence of an electric field, and wherein the first polarization-influencing elements and the second polarization-influencing elements are transverse Pockels cells. | 09-25-2014 |
20140313498 | POLARIZATION-INFLUENCING OPTICAL ARRANGEMENT, IN PARTICULAR IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A polarization-influencing optical arrangement comprises a first retardation element and a second retardation element. | 10-23-2014 |
20140347646 | METHOD AND APPARATUS FOR COMPENSATING AT LEAST ONE DEFECT OF AN OPTICAL SYSTEM - The invention relates to a method for compensating at least one defect of an optical system which comprises introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated. | 11-27-2014 |
20140362360 | ILLUMINATION OPTICAL UNIT FOR A PROJECTION EXPOSURE APPARATUS - An illumination optical unit for a projection exposure apparatus serves for guiding illumination light toward an illumination field, in which a lithography mask can be arranged. A first facet mirror has a plurality of individual mirrors that provide illumination channels for guiding illumination light partial beams toward the illumination field. The individual mirrors each bear a multilayer reflective coating. A second facet mirror is disposed downstream of the first facet mirror in the beam path of the illumination light. A respective facet of the second facet mirror with at least one of the individual mirrors of the first facet mirror completes the illumination channel for guiding the illumination light partial beam toward the illumination field. | 12-11-2014 |
20140362362 | METHOD FOR ADJUSTING AN OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A method for adjusting an optical system in a microlithographic projection exposure apparatus includes establishing, for a given actual position of a polarization-influencing component, a distribution of IPS values in a pupil plane of the projection exposure apparatus. Each IPS value denotes the degree of realization of a predetermined polarization state for a light ray reflected at a respective mirror element of the mirror arrangement. The method also includes changing the position of the polarization-influencing component on the basis of the established distribution. | 12-11-2014 |
20150017589 | APPARATUS AND METHOD FOR COMPENSATING A DEFECT OF A CHANNEL OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE SYSTEM - The invention relates to an illumination system of a microlithographic projection exposure apparatus comprising (a) a plurality of channels, each channel guiding a partial beam and at least one channel comprising at least one defect, and (b) at least one optical element arranged within the at least one channel having the at least one defect, the optical element being adapted to at least partially compensate the at least one defect of the partial beam of the channel. | 01-15-2015 |
20150029480 | OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - An optical system of a microlithographic projection exposure apparatus comprises at least one mirror arrangement, having a plurality of mirror elements which are adjustable independently of one another for varying an angular distribution of the light reflected by the mirror arrangement, a polarization-influencing optical arrangement, by which, for a light beam passing through during the operation of the projection exposure apparatus, different polarization states can be set via the light beam cross section, and a retarder arrangement, which is arranged upstream of the polarization-influencing optical arrangement in the light propagation direction and at least partly compensates for a disturbance of the polarization distribution that is present elsewhere in the projection exposure apparatus, wherein the polarization-influencing optical arrangement has optical components which are adjustable in their relative position with respect to one another, wherein different output polarization distributions can be produced by this adjustment in conjunction with the mirror arrangement. | 01-29-2015 |
20150062551 | OPTICAL SYSTEM, IN PARTICULAR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The invention relates to an optical system, in particular of a microlithographic projection exposure apparatus, with an optical system axis (OA) and a polarization-influencing optical arrangement. According to one aspect, the polarization-influencing optical arrangement comprises at least one polarization-influencing optical element, which has a monolithic design and linear birefringence, wherein the overall absolute value of the birefringence of all of the polarization-influencing optical elements deviates by at most +15% from the value lambda/2, wherein lambda is the working wavelength of the optical system, wherein the direction of the fast axis of this birefringence varies in a plane perpendicular to the optical system axis (OA) in the at least one polarization-influencing optical element, and wherein the distribution of the fast axis of the birefringence of the polarization-influencing optical element is brought about by radiation-induced defects, which are situated in at least one optically unused region of the element. | 03-05-2015 |
20150085272 | OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The invention relates to an optical system of a microlithographic projection exposure apparatus, in particular for operation in the EUV, comprising at least one polarization-influencing arrangement having a first reflection surface and a second reflection surface, wherein the first reflection surface and the second reflection surface are arranged at an angle of 0°±10° or at an angle of 90°±10° relative to one another, wherein light incident on the first reflection surface during the operation of the optical system forms an angle of 45°±5° with the first reflection surface, and wherein the polarization-influencing arrangement is rotatable about a rotation axis running parallel to the light propagation direction of light incident on the first reflection surface during the operation of the optical system. | 03-26-2015 |
20150160561 | MIRROR - Mirror having a fragmented total surface area, wherein the fragmentation forms an aperiodic arrangement. | 06-11-2015 |
20150160566 | OPTICAL SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND MICROLITHOGRAPHIC EXPOSURE METHOD - The invention relates to an optical system for a microlithographic projection exposure apparatus, and to a microlithographic exposure method. An optical system for a microlithographic projection exposure apparatus comprises at least one mirror arrangement having a plurality of mirror elements, wherein these mirror elements can be adjusted independently of one another for changing an angular distribution of the light reflected by the mirror arrangement, and a polarization-influencing optical arrangement which is arranged downstream of the mirror arrangement in the light propagation direction, wherein the polarization-influencing optical arrangement reflects a light beam incident on the arrangement in at least two reflections, which do not occur in a common plane, for at least one angular distribution of the light reflected by the mirror arrangement. | 06-11-2015 |
20150277235 | OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - The invention relates to an optical system of a microlithographic projection exposure apparatus, comprising at least one mirror arrangement having a plurality of mirror elements which are adjustable independently of one another for the purpose of changing an angular distribution of the light reflected by the mirror arrangement, and a polarization-influencing optical element, which generates, for impinging light having a constantly linear or a circular input polarization distribution, an output polarization distribution having a direction of polarization that varies continuously over the light beam cross section. | 10-01-2015 |
20150301455 | METHOD OF LITHOGRAPHICALLY TRANSFERRING A PATTERN ON A LIGHT SENSITIVE SURFACE AND ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS - A method of lithographically transferring a pattern on a light sensitive surface in a multiple exposure process comprises the following steps: | 10-22-2015 |
20150323387 | POLARIZATION MEASURING DEVICE, LITHOGRAPHY APPARATUS, MEASURING ARRANGEMENT, AND METHOD FOR POLARIZATION MEASUREMENT - A polarization measuring device ( | 11-12-2015 |
20150323874 | EUV LIGHT SOURCE FOR GENERATING A USED OUTPUT BEAM FOR A PROJECTION EXPOSURE APPARATUS - An EUV light source serves for generating a used output beam of EUV illumination light for a projection exposure apparatus for projection lithography. | 11-12-2015 |
20150355552 | OPTICAL ASSEMBLY FOR INCREASING THE ETENDUE - An optical system has a light source having an original etendue of less than 0.1 mm | 12-10-2015 |
20160004164 | ILLUMINATION SYSTEM FOR AN EUV LITHOGRAPHY DEVICE AND FACET MIRROR THEREFOR - The invention relates to an illumination system for an EUV lithography device, comprising: a first facet mirror having facet elements that reflect EUV radiation, and a second facet mirror having facet elements for reflecting the EUV radiation reflected by the first facet mirror onto an illumination field. At least one of the facet elements of the first facet mirror or of the second facet mirror is designed as a diffractive optical element for diffracting the EUV radiation. In particular, at least one of the facet elements of the second facet mirror is designed as a diffractive optical element for illuminating only a part of the illumination field. The invention also relates to an EUV lithography device comprising such an illumination system, and to a facet mirror comprising at least one diffractive facet element. | 01-07-2016 |
Katherine Saenger, Yorktown Heights, NY US
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20110171792 | BACK-GATED FULLY DEPLETED SOI TRANSISTOR - A fully depleted semiconductor-on-insulator (FDSOI) transistor structure includes a back gate electrode having a limited thickness and aligned to a front gate electrode. The back gate electrode is formed in a first substrate by ion implantation of dopants through a first oxide cap layer. Global alignment markers are formed in the first substrate to enable alignment of the front gate electrode to the back gate electrode. The global alignment markers enable preparation of a virtually flat substrate on the first substrate so that the first substrate can be bonded to a second substrate in a reliable manner. | 07-14-2011 |
Katherine Saenger, Ossining, NY US
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20130143000 | Forming Patterned Graphene Layers - An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices. | 06-06-2013 |
20150235730 | Forming Patterned Graphene Layers - Structures and methods for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices. | 08-20-2015 |
20150279677 | Forming Patterned Graphene Layers - An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure on a substrate; applying a layer of graphene on top of the at least one patterned structure on the substrate; heating the layer of graphene on top of the at least one patterned structure to remove one or more graphene regions proximate to the at least one patterned structure; and removing the at least one patterned structure to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices. | 10-01-2015 |
Katherine L. Saenger, Yorktown Heights, NY US
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20100221867 | LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS - A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate. | 09-02-2010 |
20110048517 | Multijunction Photovoltaic Cell Fabrication - A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer. | 03-03-2011 |
20110162702 | QUASI-PYRAMIDAL TEXTURED SURFACES USING PHASE-SEGREGATED MASKS - A method of texturing a surface of a substrate utilizing a phase-segregated mask and etching is disclosed. The resulting textured surface, which can be used as a component of a solar cell includes, in one embodiment, a randomly mixed collection of flat-topped and angled surfaces providing local high points and local low points. The flat-topped surfaces have an areal density of at least 1%, and the high points are coincident with the flat-topped surfaces. Moreover, a preponderance of said low points are approximately situated in a single common plane parallel to the plane defined by the flat-topped surfaces. | 07-07-2011 |
20110201204 | Precisely Tuning Feature Sizes on Hard Masks Via Plasma Treatment - Methods are provided for fabricating devices. A first layer is formed. A hardmask on the first layer is formed. Features on the hardmask are patterned. The sizes of features on the hardmask are reduced by applying a plasma treatment process to form reduced size features. Also, the size of features on the hardmask can be enlarged to form enlarged size features by applying the plasma treatment process and/or removing the oxidized part of the feature during plasma treatment process. Another method may include a first layer formed on a substrate and a second layer formed on the first layer. First features are patterned on the first layer, and second features are patterned on the second layer. A size of second features on the second layer is closed due to the different oxidation rate of the two layers during the plasma treatment process, to form a self-sealed channel and/or self-buried trench. | 08-18-2011 |
20110206934 | GRAPHENE FORMATION UTILIZING SOLID PHASE CARBON SOURCES - A method for forming a single, few-layer, or multi-layer graphene and structure is described incorporating selecting a substrate having a buried layer of carbon underneath a metal layer, providing an ambient and providing a heat treatment to pass carbon through the metal layer to form a graphene layer on the metal layer surface or incorporating a metal-carbon layer which is heated to segregate carbon in the form of graphene to the surface or chemically reacting the metal in the metal-carbon layer with a substrate containing Si driving the carbon to the surface whereby graphene is formed. | 08-25-2011 |
20130000707 | Multijunction Photovoltaic Cell Fabrication - A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer. | 01-03-2013 |
Katherine L. Saenger, Ossinging, NY US
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20150279696 | Techniques for Fabricating Reduced-Line-Edge-Roughness Trenches for Aspect Ratio Trapping - The present invention provides ART techniques with reduced LER. In one aspect, a method of ART with reduced LER is provided which includes the steps of: providing a silicon layer separated from a substrate by a dielectric layer; patterning one or more ART lines in the silicon layer selective to the dielectric layer; contacting the silicon layer with an inert gas at a temperature, pressure and for a duration sufficient to cause re-distribution of silicon along sidewalls of the ART lines patterned in the silicon layer; using the resulting smoothened, patterned silicon layer to pattern ART trenches in the dielectric layer; and epitaxially growing a semiconductor material up from the substrate at the bottom of each of the ART trenches, to form fins in the ART trenches. | 10-01-2015 |
Katherine Lynn Saenger, Ossining, NY US
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20080258194 | FLIP FERAM CELL AND METHOD TO FORM SAME - A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure. | 10-23-2008 |
20080315309 | FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE AND DRAIN REGIONS - Improved fin field effect transistor (FinFET) devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a field effect transistor device comprises the following steps. A substrate is provided having a silicon layer thereon. A fin lithography hardmask is patterned on the silicon layer. A dummy gate structure is placed over a central portion of the fin lithography hardmask. A tiller layer is deposited around the dummy gate structure. The dummy gate structure is removed to reveal a trench in the filler layer, centered over the central portion of the fin lithography hardmask, that distinguishes a fin region of the device from source and drain regions of the device. The fin lithography hardmask in the fin region is used to etch a plurality of fins in the silicon layer. The trench is filled with a gate material to form a gate stack over the fins. The filler layer is removed to reveal the source and drain regions of the device, wherein the source and drain regions are intact and self-aligned with the gate stack. | 12-25-2008 |
20090057762 | Nanowire Field-Effect Transistors - Field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a FET is provided. The FET comprises a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section included in a source region and the other section included in a drain region; a channel region connecting the source region and the drain region and including at least one nanowire; an epitaxial semiconductor material, grown from the SOI layer, covering the nanowire and attaching the nanowire to each section of the SOI layer; and a gate over the channel region. | 03-05-2009 |
20090061568 | Techniques for Fabricating Nanowire Field-Effect Transistors - Techniques for the fabrication of field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a method of fabricating a FET is provided comprising the following steps. A substrate is provided having a silicon-on-insulator (SOI) layer. At least one nanowire is deposited over the SOI layer. A sacrificial gate is formed over the SOI layer so as to cover a portion of the nanowire that forms a channel region. An epitaxial semiconductor material is selectively grown from the SOI layer that covers the nanowire and attaches the nanowire to the SOI layer in a source region and in a drain region. The sacrificial gate is removed. An oxide is formed that divides the SOI layer into at least two electrically isolated sections, one section included in the source region and the other section included in the drain region. A gate dielectric layer is formed over the channel region. A gate is formed over the channel region separated from the nanowire by the gate dielectric layer. A metal-semiconductor alloy is formed over the source and drain regions. | 03-05-2009 |
20090302372 | Fin Field Effect Transistor Devices with Self-Aligned Source and Drain Regions - Improved fin field effect transistor (FinFET) devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a field effect transistor device comprises the following steps. A substrate is provided having a silicon layer thereon. A fin lithography hardmask is patterned on the silicon layer. A dummy gate structure is placed over a central portion of the fin lithography hardmask. A filler layer is deposited around the dummy gate structure. The dummy gate structure is removed to reveal a trench in the filler layer, centered over the central portion of the fin lithography hardmask, that distinguishes a fin region of the device from source and drain regions of the device. The fin lithography hardmask in the fin region is used to etch a plurality of fins in the silicon layer. The trench is filled with a gate material to form a gate stack over the fins. The filler layer is removed to reveal the source and drain regions of the device, wherein the source and drain regions are intact and self-aligned with the gate stack. | 12-10-2009 |
Kathering Lynn Saenger, Ossining, NY US
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20140042556 | Fin Field Effect Transistor Devices With Self-Aligned Source and Drain Regions - Improved fin field effect transistor (FinFET) devices and methods for the fabrication thereof are provided. In one aspect, a field effect transistor device is provided. The field effect transistor device includes a source region; a drain region; a plurality of fins connecting the source region and the drain region, the fins having a pitch of between about 40 nanometers and about 200 nanometers and each fin having a width of between about ten nanometers and about 40 nanometers; and a gate stack over at least a portion of the fins, wherein the source region and the drain region are self-aligned with the gate stack. | 02-13-2014 |
Mario Saenger, El Monte, CA US
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20140203287 | NITRIDE LIGHT-EMITTING DEVICE WITH CURRENT-BLOCKING MECHANISM AND METHOD FOR FABRICATING THE SAME - A nitride light emitting device comprises a current blocking Schottky junction zone formed below the p-electrode and above the active region so that current injection from the p-electrode to the area of the active region that is vertically shaded by the p-electrode is blocked by the Schottky junction zone. A method for fabricating the same is also provided. | 07-24-2014 |
Richard Saenger, Chatillon FR
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20080282924 | Shaped Charge and a Perforating Gun - A shaped charge comprises a shell, an explosive charge disposed inside the shell, and a first liner for retaining the explosive charge within the shell. The shaped charge further comprises an acid material disposed inside the shell on the first liner and retained by a second liner into the shell. | 11-20-2008 |
20090057545 | Downhole Tools with Solid-State Neutron Monitors - A nuclear tool includes a tool housing; a neutron generator disposed in the tool housing; and a solid-state neutron monitor disposed proximate the neutron generator for monitoring the output of the neutron generator. A method for constructing a nuclear tool includes disposing a neutron generator in a tool housing; and disposing a solid-state neutron monitor proximate the neutron generator for monitoring the output of the neutron generator. A method for logging a formation includes disposing a nuclear tool in a wellbore penetrating the formation, wherein the nuclear tool comprises a neutron generator and a solid-state neutron monitor disposed proximate the neutron generator; generating neutrons from the neutron generator; monitoring neutrons generated by the neutron generator using the solid-state neutron monitor; detecting signals generated from the neutrons traveling in the formation; and correcting the detected signals, based on signal strength detected by the solid-state neutron monitor, to produce corrected signals. | 03-05-2009 |
20110061945 | Durability of Downhole Tools - An apparatus for downhole operation. The apparatus comprising a support body having a surface located in a borehole and a coating on an at least a portion of the surface of the support body. The coating is an inert material selected for reducing friction and corrosion. | 03-17-2011 |
20120012751 | Electron focusing systems and techniques integrated with a scintillation detector covered with a reflective coating - The present disclosure provides systems and methods where an electron focusing device can be combined with a scintillation detector to better focus the electrons generated by a light sensing device. The scintillation detector can include a scintillation crystal that is covered by an inner light-reflecting coating layer where the scintillation crystal may emit photons due to measurement radiation(s). The light sensing device can include a photomultiplier that may receive the photons emitted by the scintillation crystal and convert them into the electrons generated. The electron focusing device can include a metal ring magnet or one or more conducting coils encircling the scintillation crystal that may create a magnetic field so as to focus the electrons generated by the light sensing device. | 01-19-2012 |
20160001400 | Remote Laser Heating Systems and Methods - Systems and methods are provided for laser heating in a fluid environment ( | 01-07-2016 |
Richard G. Saenger, Chatillon FR
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20130015339 | Optically Stimulated Luminescence Radiation Measurement DeviceAANM Saenger; Richard G.AACI ChatillonAACO FRAAGP Saenger; Richard G. Chatillon FR - A device is presented to measure radiation in a well drilled in a geological formation. The device comprises at least one sensing arrangement, a light source, and a light sensor. The sensing arrangement comprises an optically stimulated luminescence material arranged to be positioned near a zone of interest such as to accumulate radiation emitted by the zone of interest over a defined accumulation delay. The light source is arranged to optically stimulate emission of a luminescence light by the sensing arrangement with a stimulation light according to a first wavelength range. And the light sensor is arranged to measure the luminescence light emitted by the sensing arrangement according to another wavelength range, a measured intensity of the luminescence light related to the accumulated radiation. | 01-17-2013 |
20150309191 | Downhole Gas-Filled Radiation Detector with Optical Fiber - Systems and devices are provided that relate to a gas-filled radiation detector with an internal optical fiber. The internal optical fiber may detect photons emitted during ionization avalanche events triggered by incident radiation. Such a radiation detector may include a housing, a fill gas within the housing, and an optical fiber within the housing. The fill gas may interact with radiation through an ionization avalanche that produces light. The optical fiber within the housing may capture the light and transmit the light out of the housing. | 10-29-2015 |
Roland Herbert Saenger, Munich DE
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20100221284 | NOVEL VACCINE COMPOSITION - An inactivated influenza virus preparation is described which comprises a haemagglutinin antigen stabilised in the absence of thiomersal, or at low levels of thiomersal, wherein the haemagglutinin is detectable by a SRD assay. The influenza virus preparation may comprise a micelle modifying excipient, for example α-tocopherol or a derivative thereof in a sufficient amount to stabilise the haemagglutinin. | 09-02-2010 |
Walter Saenger, Fuerth DE
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20130323954 | ELECTRICAL CONNECTOR AND CONNECTOR SYSTEM - The invention relates to an electrical connector ( | 12-05-2013 |
Yvonne Saenger, New York, NY US
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20150218649 | BIOMARKER ASSOCIATED WITH RISK OF MELANOMA REOCCURRENCE - The present invention provides a method of predicting the risk of reoccurrence of melanoma in a patient from whom melanoma tissue was previously removed which comprises the following: | 08-06-2015 |