Patent application number | Description | Published |
20110156042 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an “impurity which suppresses generation of crystal nuclei” contained in the base layer or located on its surface, a first wiring layer over a base layer, an impurity semiconductor layer over the first wiring, a semiconductor layer over the impurity semiconductor layer, the semiconductor layer comprises a crystalline region and a region containing an amorphous phase which is formed adjacent to the base layer. | 06-30-2011 |
20110318888 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×10 | 12-29-2011 |
20120100675 | MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed. | 04-26-2012 |
20120115285 | METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A seed crystal which includes mixed phase grains including an amorphous silicon region and a crystallite which is a microcrystal that can be regarded as a single crystal is formed on an insulating film by a plasma CVD method under a first condition that enables mixed phase grains having high crystallinity and high uniformity of grain sizes to be formed at a low density, and then a microcrystalline semiconductor film is formed to be stacked on the seed crystal by a plasma CVD method under a second condition that enables the mixed phase grains to grow to fill a space between the mixed phase grains. | 05-10-2012 |
20120187408 | MICROCRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm | 07-26-2012 |
20130240855 | Method for Manufacturing Light-Emitting Device - A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal. | 09-19-2013 |
20150044792 | Peeling Method - To improve the yield in a peeling process and improve the yield in a manufacturing process of a flexible light-emitting device or the like, a peeling method includes a first step of forming a peeling layer over a first substrate, a second step of forming a layer to be peeled including a first layer in contact with the peeling layer over the peeling layer, a third step of curing a bonding layer in an overlapping manner with the peeling layer and the layer to be peeled, a fourth step of removing part of the first layer overlapping with the peeled layer and the bonding layer to form a peeling starting point, and a fifth step of separating the peeling layer and the layer to be peeled. The peeling starting point is preferably formed by laser light irradiation. | 02-12-2015 |
20150059986 | DEVICE FOR FORMING SEPARATION STARTING POINT, STACK MANUFACTURING APPARATUS, AND METHOD FOR FORMING SEPARATION STARTING POINT - A device for forming a separation starting point that allows separation of a surface layer of a processed member to form a remaining portion is provided. A manufacturing device of a stack including a support and a remaining portion of a processed member whose surface layer is separated is provided. The device for forming the separation starting point includes a stage that supports the processed member, a cutter that faces the stage, a head portion that supports the cutter, an arm portion that supports the head portion, and a moving mechanism that relatively moves the cutter to the stage. | 03-05-2015 |