Patent application number | Description | Published |
20080268562 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron. | 10-30-2008 |
20090278148 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A transparent-substrate light-emitting diode ( | 11-12-2009 |
20100123161 | LIGHT EMITTING DIODE, PRODUCTION METHOD THEREOF AND LAMP - A light emitting diode includes a substrate, a compound semiconductor layer including a light emitting layer formed on the substrate, a first electrode formed on an upper surface of the compound semiconductor layer, and a second electrode formed on the substrate or a semiconductor layer which is exposed by removing at least a portion of the compound semiconductor layer. The first electrode includes a wiring electrode provided on the compound semiconductor layer in contact therewith, an ohmic electrode provided on the compound semiconductor layer in contact therewith, a translucent electrode formed over the compound semiconductor layer to cover the wiring electrode and the ohmic electrode, and a bonding pad electrode connected to the wiring electrode, at least a portion of the bonding pad electrode being exposed from an opening of the translucent electrode to the exterior. | 05-20-2010 |
20100258826 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode ( | 10-14-2010 |
20100308365 | COMPOUND SEMICONDUCTOR LIGHT EMITTING DIODE - Disclosed is a compound semiconductor light emitting diode | 12-09-2010 |
20110037087 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A compound semiconductor light-emitting diode includes a light-emitting layer ( | 02-17-2011 |
20110062413 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage. | 03-17-2011 |
20110133238 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A transparent-substrate light-emitting diode ( | 06-09-2011 |
20110297978 | LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DIODE LAMP - The invention provides a high luminance light-emitting diode capable of reducing the loss of light emitted from LED chips in a package and also capable of improving the light extraction efficiency from the package, wherein | 12-08-2011 |
20110298002 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - The object of the invention is to provide a light-emitting diode that is excellent in terms of thermal radiation properties and is capable of suppressing cracks in the substrate during joining and emitting light with high luminance by applying a high voltage, a light-emitting diode lamp, and a method of manufacturing a light-emitting diode. The above object is achieved by using a light-emitting diode ( | 12-08-2011 |
20110315955 | LIGHT-EMITTING DIODE AND LIGHT-EMITTING DIODE LAMP - A light-emitting diode includes a transparent substrate and a compound semiconductor layer that includes a light-emitting unit and is bonded to the transparent substrate. The light-emitting unit includes a light-emitting layer represented by a composition formula (Al | 12-29-2011 |
20110316020 | EPITAXIAL WAFER FOR LIGHT EMITTING DIODE - An epitaxial wafer for a light emitting diode, including a GaAs substrate, a light emitting unit provided on the GaAs substrate, and a strain adjustment layer provided on the light emitting unit, wherein the light emitting unit has a strained light emitting layer having a composition formula of (Al | 12-29-2011 |
20120007114 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP AND ILLUMINATING DEVICE - A light emitting diode including a compound semiconductor layer having at least a pn junction-type light emitting unit and a strain adjustment layer stacked on the light emitting unit, wherein the light emitting unit has a stacked structure containing a strained light emitting layer having a composition formula of (Al | 01-12-2012 |
20120080689 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND LIGHTING APPARATUS - A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode ( | 04-05-2012 |
20120124903 | MULTICOLOR LIGHT EMITTING DIODE LAMP FOR PLANT GROWTH, ILLUMINATION APPARATUS, AND PLANT GROWTH METHOD - In an illumination apparatus for plant growth using LEDs, a light source emitting mixed color light of red and blue is dominant light source. However, actually, the luminescence intensity of red light is weaker than that of blue light, and the color is adjusted by the number of lamps used. Thus, a small number of blue LEDs are interspersed among a large number of red LEDs, and there is a problem in that it is not possible to make irradiation of blue light uniform. The present invention provides a multicolor light emitting diode lamp in which a blue LED and a AlGaInP-based red LED having high luminescence efficiency, balancing with the blue LED are mounted in the same package. The red LED includes a light emitting section including a light emitting layer having a composition formula, (Al | 05-24-2012 |
20120168717 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 07-05-2012 |
20120168782 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section ( | 07-05-2012 |
20120199873 | METAL SUBSTRATE FOR LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - The object of the present invention is to provide a metal substrate for a light-emitting diode having excellent chemical resistance, a light-emitting diode, and a method for manufacturing the light-emitting diode, and the present invention provides a metal substrate for a light-emitting diode including a metal substrate, a compound semiconductor layer having a light-emitting portion, which is joined over the metal substrate via a junction layer, wherein the metal substrate for a light-emitting diode includes a metal plate and a metal protective film which covers at least an upper surface and a lower surface of the metal plate. | 08-09-2012 |
20120305979 | LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DIODE LAMP - The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness. The present invention relates to a light-emitting diode ( | 12-06-2012 |
20140124733 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 05-08-2014 |