Patent application number | Description | Published |
20090236962 | DISPLAYING DEVICE AND LIGHTING DEVICE EMPLOYING ORGANIC ELECTROLUMINESCENCE ELEMENT - The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm. | 09-24-2009 |
20090242925 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer. | 10-01-2009 |
20100175749 | SOLAR CELL AND METHOD FOR MANUFACTURING METAL ELECTRODE LAYER TO BE USED IN THE SOLAR CELL - A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity. | 07-15-2010 |
20100220757 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered film, plural semiconductor layers and an active layer are stacked. The light-extraction surface is provided on the multilayered film, and plural micro-projections are formed thereon. These micro-projections have flat top faces parallel to the multilayered film, and they can be formed by an etching process. The etching process is performed by use of a dot pattern as a mask, and the dot pattern is formed by phase separation of a block copolymer. | 09-02-2010 |
20100221856 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them. | 09-02-2010 |
20100236619 | LIGHT TRANSMISSION TYPE SOLAR CELL AND METHOD FOR PRODUCING THE SAME - The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm | 09-23-2010 |
20100236620 | THIN FILM SOLAR CELL AND METHOD FOR PRODUCING THE SAME - According to one aspect of the present invention, there is provided a thin film solar cell comprising a substrate, a photoelectric conversion layer formed on said substrate, said photoelectric conversion layer having a thickness of 1 μm or less, and said photoelectric conversion layer comprising a p-type semiconductor layer, an n-type semiconductor layer, and are i-type semiconductor layer placed between said p-type semiconductor layer and said n-type semiconductor layer, a light-incident side electrode layer formed on a light-incident surface of said photoelectric conversion layer and a counter electrode layer formed on the surface opposite to the light-incident surface. Said light-incident side electrode layer has plural openings bored though said layer, and the thickness thereof is in the range of 10 nm to 200 nm. Each of said openings occupies an area of 80 nm | 09-23-2010 |
20110049556 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm | 03-03-2011 |
20110220936 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING INSTRUMENT EMPLOYING THE SAME AND PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm. | 09-15-2011 |
20120042946 | SOLAR CELL EQUIPPED WITH ELECTRODE HAVING MESH STRUCTURE, AND PROCESS FOR MANUFACTURING SAME - The embodiment provides a solar cell and a manufacturing process thereof. The solar cell is equipped with an electrode on the light incident surface side; and the electrode has both low resistivity and high transparency, can efficiently utilize solar light for excitation of carriers, and can be made of inexpensive materials. The solar cell comprises a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and has plural penetrating openings. Each of the individual openings occupies an area in the range of 80 nm | 02-23-2012 |
20120056155 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers. | 03-08-2012 |
20120056222 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers. | 03-08-2012 |
20120056232 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer. | 03-08-2012 |
20120061640 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×10 | 03-15-2012 |
20120061712 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer. | 03-15-2012 |
20120091499 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer. | 04-19-2012 |
20120097640 | RESIN COMPOSITION FOR PATTERN FORMATION, PATTERN FORMATION METHOD AND PROCESS FOR PRODUCING LIGHT-EMITTING ELEMENT - Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties. The resin composition for pattern formation comprises: (a) a specific block copolymer containing an aromatic ring-containing polymer and a poly(meth)acrylate as block moieties; (b) a homopolymer of a specific aromatic ring-containing polymer; and (c) a homopolymer of a specific poly(meth)acrylate, wherein the ratio of the total amount of the aromatic ring-containing homopolymer (b) and the poly(meth)acrylate homopolymer (c) relative to the entire resin composition is 0% by weight to 90% by weight, and the total amount of an aromatic ring-containing polymer moiety contained in the block copolymer (a) as a block moiety and the aromatic ring-containing homopolymer (b) relative to the entire resin composition is 10% by weight to 60% by weight. | 04-26-2012 |
20120132948 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction. | 05-31-2012 |
20120187414 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF - One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them. | 07-26-2012 |
20120223348 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion. | 09-06-2012 |
20120223355 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. | 09-06-2012 |
20120228654 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer. | 09-13-2012 |
20130075762 | OPTICALLY TRANSMISSIVE METAL ELECTRODE, ELECTRONIC DEVICE, AND OPTICAL DEVICE - According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength. | 03-28-2013 |
20130075771 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion. | 03-28-2013 |
20130075778 | LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE - According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%. | 03-28-2013 |
20130081683 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF PRODUCING THE SAME - The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres. | 04-04-2013 |
20130092219 | SOLAR CELL - The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect. | 04-18-2013 |
20130133825 | PATTERN FORMATION METHOD AND POLYMER ALLOY BASE MATERIAL - According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures. | 05-30-2013 |
20130248912 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes a stacked body and an optical layer. The stacked body has a major surface and includes a light emitting layer. The optical layer is in contact with the surface and includes a dielectric body, first particles, and second particles. The optical layer includes a first region including the dielectric body and the first particles and does not include the second particles and a second region including the dielectric body and the second particles. A sphere-equivalent diameter of the first particle is not less than 1 nanometer and not more than 100 nanometers. A sphere-equivalent diameter of the second particle is more than 300 nanometers and less than 1000 nanometers. An average refractive index of the first region is larger than a refractive index of the stacked body and smaller than a refractive index of the second particle. | 09-26-2013 |
20140024165 | SOLAR CELL EQUIPPED WITH ELECTRODE HAVING MESH STRUCTURE, AND PROCESS FOR MANUFACTURING SAME - A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm | 01-23-2014 |
20140145232 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING INSTRUMENT EMPLOYING THE SAME AND PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm. | 05-29-2014 |
20140349421 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer. | 11-27-2014 |
20150072456 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion. | 03-12-2015 |