Patent application number | Description | Published |
20100193092 | COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME - A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass % and 5.0 mass %; silicon (Si) between 0.4 mass % and 1.5 mass %; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 μm and not larger than 20 μm, and a standard deviation of the crystalline grain diameter is not larger than 10 μm. | 08-05-2010 |
20100326573 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME - An copper alloy material for electric/electronic components
| 12-30-2010 |
20110005644 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS - A copper alloy material for an electric/electronic part, containing Co 0.5 to 2.5 mass % and Si 0.1 to 1.0 mass %, at a ratio of Co/Si of 3 to 5 in terms of mass ratio, with the balance of Cu and inevitable impurities, which is obtained by subjecting to a solution treatment at a temperature (° C.) from 800° C. to 960° C. and lower than −122.77X | 01-13-2011 |
20110186192 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS AND METHOD OF PRODUCING THE SAME - A copper alloy material for an electric/electronic part, having a composition comprising Co 0.5 to 2.0 mass % and Si 0.1 to 0.5 mass %, with the balance of Cu and inevitable impurities, in which a copper alloy of a matrix has a grain size of 3 to 35 μm, a precipitate composed of Co and Si has a particle size of 5 to 50 nm, the precipitate has a density of 1×10 | 08-04-2011 |
20110200479 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS - A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 μm; and an electrical conductivity is 50% IACS or more. | 08-18-2011 |
20110200480 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS - A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 μm. | 08-18-2011 |
20110247735 | COPPER ALLOY MATERIAL FOR ELECTRIC/ELECTRONIC PARTS AND METHOD OF PRODUCING THE SAME - A copper alloy material for electric/electronic parts, containing: Sn 3.0 to 13.0 mass %, any one or both of Fe and Ni 0.01 to 2.0 mass % in total, and P 0.01 to 1.0 mass %, with the balance being Cu and unavoidable impurities, wherein an average diameter of grains is 1.0 to 5.0 μm, wherein a compound X having an average diameter of 30 nm or more and 300 nm or less is dispersed in density 10 | 10-13-2011 |
20150357725 | Terminal, Wire Connecting Structure and Method of Manufacturing A Terminal - A terminal includes a connector portion electrically connectable to an external terminal, a tubular crimp portion formed integrally or separate from the connector portion and crimps with a wire, and a transition portion coupling the two. The tubular crimp portion of a copper or copper alloy metal base material or a metal member having the same is a tubular member closed on transition portion side and reduces in diameter towards the transition portion side such that a conductor-end portion of the electric wire is un-exposed. The tubular crimp portion has a belt-shaped weld portion along a longitudinal direction of the tubular crimp portion. A circumferential direction of the tubular crimp portion matches the RD-direction of the base material. A sum of area ratios R1, R2 and R3 in a rolling plane of the base material, of Cube-, RDW-, and Goss-oriented crystal grains, respectively, is greater than or equal to 15%. | 12-10-2015 |