Patent application number | Description | Published |
20090040677 | Device and method of reducing inrush current - This disclosure provides a method and apparatus for reducing an inrush current inflowing from an external power source during an initial transient state. The method may include generating a first signal based on a level of internal voltage. The first signal may linearly increase or decrease, wherein the slope of the first signal may be fixed. The method may further include comparing the first signal with the reference voltage, and controlling an overcurrent prevention function based on the comparison results. An inrush current reducing device may include a reference voltage generating unit configured to compare a first signal and the reference voltage to control an overcurrent sensing gain, a gain unit configured to compare a first signal and the reference voltage to control an overcurrent sensing gain, and an overcurrent prevention signal generating unit configured to control an overcurrent prevention function based on the comparison results. | 02-12-2009 |
20090128113 | POWER CONVERTER HAVING AUTO CONVERSION FUNCTION FOR PULSE SKIP MODE AND CONTROL METHOD - A power converter having an auto conversion function for a pulse skip mode (PSM) and a related control method are provided. The power converter having an auto conversion function for a PSM and a control method thereof can provide a PSM capable of preventing unnecessary switching operations and, thus, improving the efficiency of the power converter by automatically switching to the PSM even when a load is small. | 05-21-2009 |
20090134708 | MAXIMUM VOLTAGE SOURCE SELECTOR - A maximum voltage source selector adapted for use in a semiconductor device operative in a disable state or an enable state is disclosed. The maximum voltage source selector includes an output unit having an output node providing a maximum voltage selected from a first input voltage and a second input voltage. First and second gate transistors are commonly coupled to the output node and are respectively configured to select and provide the greater of the first and second input voltages to the output node in response to first and second selection signals without regard to whether the semiconductor device is in the disable state or the enable state. A selection unit generates the first and second selection signals in response to the first and second input voltages. | 05-28-2009 |
20100039170 | NEGATIVE SUPPLY VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THE SAME - A negative supply voltage generating circuit includes a pulse generating circuit and a charge pump. The pulse generating circuit generates a first pulse signal and a second pulse signal in response to a clock signal. The first and second pulse signals have pulse widths different from each other. The charge pump generates a negative supply voltage by performing a charge pumping operation in response to the first and second pulse signals, and has a time interval between a switch-on time duration for charging a flying capacitor and a switch-on time duration for transmitting charges to an output capacitor. | 02-18-2010 |
20100052640 | Stability compensation circuit and DC-DC converter including the same - A stability compensation circuit and a DC-DC converter including the same are provided. When an output voltage of the DC-DC converter decreases more than a predetermined value, the stability compensation circuit quickly charges an integral capacitor by using an additional converter or by reducing an effective resistance of a charging circuit which charges the capacitor. Since an output voltage of an integrator in the stability compensation circuit is enabled to quickly reach a control voltage, the instant decrease of the output voltage of the DC-DC converter can be quickly compensated for. | 03-04-2010 |
Patent application number | Description | Published |
20080305638 | Coating compositions for use in forming patterns and methods of forming patterns - A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group. | 12-11-2008 |
20090131635 | Method for synthesizing polymer on substrate - For synthesizing a polymer, a substrate is placed within a reaction chamber, and a polymer synthesis sample is fed into the reaction chamber for forming the polymer on the substrate. In addition, the reaction chamber is shaken during formation of the polymer on the substrate within the reaction chamber for increased reaction yield. In addition, forming bubbles of the inactive gas in the polymer synthesis sample during formation of the polymer on the substrate further increases reaction yield. | 05-21-2009 |
20090137426 | MICROARRAY, SUBSTRATE FOR MICROARRAY AND METHODS OF FABRICATING THE SAME - A microarray, a substrate for a microarray and more productive methods of fabricating the microarray and the substrate are provided. The microarray includes a substrate divided into a first region and a second region; a plurality of linkers represented by formula 1 or 2: | 05-28-2009 |
20090189152 | FERROELECTRIC MEMORY DEVICE - Provided is a ferroelectric memory device. The ferroelectric memory device includes an inorganic channel pattern on a substrate, a source electrode and a drain electrode spaced apart from each other on the substrate and contacting the inorganic channel pattern, a gate electrode disposed adjacent to the inorganic channel pattern, and an organic ferroelectric layer interposed between the inorganic channel pattern and the gate electrode. | 07-30-2009 |