Patent application number | Description | Published |
20080236751 | Plasma Processing Apparatus - A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure. | 10-02-2008 |
20090020227 | Vacuum processing apparatus for semiconductor fabrication apparatus - A vacuum processing apparatus includes a vacuum processing chamber, a high-vacuum exhaust pump for exhausting the vacuum processing chamber in vacuum, a low-vacuum exhaust pump connected to the downstream side of the high-vacuum exhaust pump, a lower electrode having mounted thereon a substrate to be processed, and a cooling gas supply unit for supplying the cooling gas between the substrate and the lower electrode. The cooling gas supply unit includes a cooling gas supply system and a cooling gas supply line. The cooling gas supply line is connected, through a first waste gas valve, to a waste gas line for exhausting the cooling gas. The waste gas line is connected just above the high-vacuum exhaust pump through a second waste gas valve, and to the exhaust gas line between the high-vacuum exhaust pump and the low-vacuum exhaust pump through a third waste gas valve. | 01-22-2009 |
20090078375 | Plasma Processing Apparatus And Method - A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween. | 03-26-2009 |
20090283502 | PLASMA PROCESSING APPARATUS AND CONTROL METHOD FOR PLASMA PROCESSING APPARATUS - A unit for minimizing the problem that affects a substrate to be processed at the time of turning off a plasma is provided in a plasma processing apparatus using a magnetic field. The plasma processing apparatus comprises: a plasma-generating high-frequency power supply; a bias power supply; and a coil power supply which is connected to a coil disposed outside a vacuum process chamber and generates a magnetic field inside the vacuum process chamber, and the plasma processing apparatus further comprises: a magnetic field measuring unit which measures a magnetic field strength inside the vacuum process chamber; and a control unit which turns off an output on/off signal of the plasma-generating high-frequency power supply or the bias power supply when a magnetic field strength, which is measured after an output on/off signal of the coil power supply is turned off, decays to a predetermined value. | 11-19-2009 |
20090321391 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage. | 12-31-2009 |
20100018649 | Plasma Processing Apparatus And Method - A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar. | 01-28-2010 |
20100163184 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source. | 07-01-2010 |
20100163186 | Plasma Processing Apparatus - A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure. | 07-01-2010 |
20100230053 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus for subjecting a sample to plasma processing by generating plasma within a vacuum processing chamber | 09-16-2010 |
20110132540 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is disclosed in which a wafer mounted on a sample stage arranged in a processing chamber in a vacuum vessel is processed using a plasma formed in the processing chamber. A dielectric bell jar makes up the upper part of the vacuum vessel and surrounds processing chamber. A coil-shaped antenna wound on the outer periphery of the bell jar is supplied with the high-frequency power to form the plasma. A Faraday shield of a conductive material is formed of double layers including inner and outer layers arranged in spaced relation to each other between the antenna and the bell jar, each layer having a plurality of slits and set at a predetermined potential. The slits of the inner and outer layers of the Faraday shield are arranged in staggered fashion. | 06-09-2011 |
20120145322 | PLASMA PROCESSING APPARATUS - In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield. | 06-14-2012 |
20120267050 | PLASMA PROCESSING APPARATUS - A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp≧Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp. | 10-25-2012 |
20130000847 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus enabling uniform plasma processing over the entire surface of a sample, without causing abnormal discharge even when the electromagnetic field strength is strong as in the case of the inductive coupling method. The plasma processing apparatus includes a process chamber, a first dielectric vacuum window, an inductive coil, a radio-frequency power supply, a gas supply unit, and a sample holder. The gas supply unit includes a second dielectric gas guide plate and a third dielectric island member. The second dielectric gas guide plate is located near below the vacuum window, and has a gas inlet port in the center. The third dielectric island member is provided in a gap between the vacuum window and the gas guide plate. The dielectric constant of the third dielectric is higher than the dielectric constant of the first and second dielectrics. | 01-03-2013 |
20130075036 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma-generation high-frequency power supply which generates plasma in a processing chamber, a biasing high-frequency power supply which applies high-frequency bias electric power to an electrode on which a sample is placed, a monitor which monitors a peak-to-peak value of the high-frequency bias electric power applied to the electrode, an electrostatic chuck power supply which makes the electrode electrostatically attract the sample, a self-bias voltage calculating unit which calculates self-bias voltage of the sample by monitoring the peak-to-peak value of the high-frequency bias electric power applied to the electrode, and an output voltage control unit which controls output voltage of the electrostatic chuck power supply based on the calculated self-bias voltage. | 03-28-2013 |
20130087288 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections. | 04-11-2013 |
20130160949 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled. | 06-27-2013 |