Patent application number | Description | Published |
20110062539 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device in which the deterioration of the rewrite property is suppressed. In a memory cell region, magnetoresistive elements in a semiconductor magnetic-storage device are formed in an array shape in a mode that the magnetoresistive elements are arranged at portions where digit lines extending in one direction intersect bit lines extending in the direction approximately orthogonal to the digit lines. The digit line and the bit line have such a wiring structure constituted by covering a copper film to be a wiring main body with a cladding layer. One end side of the magnetoresistive element is electrically coupled to the bit line via a top via formed from a non-magnetic material. | 03-17-2011 |
20110156181 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device is provided which can further suppress the leakage of a magnetic field in a magnetoresistive element, and which can further improve the performance of the semiconductor device. A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over a main surface of the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the other main surface opposite to one main surface of the free layer opposed to the tunneling insulating film. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer included in the magnetoresistive element is a layer which is disposed over one main surface of the lower electrode, and whose magnetization direction is fixed. The tunneling insulating film is disposed over the other main surface opposite to one main surface of the fixed layer opposed to the lower electrode. The free layer is a layer which is disposed over the other main surface opposite to one main surface of the tunneling insulating film opposed to the fixed layer, and whose magnetization direction is variable. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer in the direction intersecting the lamination direction of the lower electrode, the fixed layer | 06-30-2011 |
20110156182 | SEMICONDUCTOR DEVICE - To provide a semiconductor device capable of further suppressing the leakage of magnetic field in a magnetoresistive element and capable of further improving performance. | 06-30-2011 |
20110291209 | MAGNETIC MEMORY DEVICE - To provide a magnetic memory device having an increased write current and improved reliability in writing. The magnetic memory device of the invention has a substrate, a write line provided over the substrate, a bit line placed with a space from the write line in a thickness direction of the substrate and extending in a direction crossing with an extending direction of the write line, and a magnetic memory element positioned between the write line and the bit line. The magnetic memory element has a pinned layer whose magnetization direction has been fixed and a recording layer whose magnetization direction changes, depending on an external magnetic field. The recording layer contains an alloy film. The alloy film contains cobalt, iron, and boron and its boron content exceeds 21 at %. | 12-01-2011 |
20120069638 | SEMICONDUCTOR DEVICE - A semiconductor device which it can accommodate variations in a write current threshold in each memory cell and can secure a write margin is provided. An MRAM device includes an MTJ memory cell arranged in a matrix, plural bit lines each arranged corresponding to a memory cell column, plural digit lines each arranged corresponding to a memory cell row, and a write current adjusting unit which adjusts a current amount of a write current to be flowed through a bit line and/or a digit line, in order to perform a data write to each MTJ memory cell normally. The write current adjusting unit divides the plural bit lines and/or the plural digit lines into units of at least one write current line as division units, and includes plural write current adjusting circuits which adjust the current amount of write current in each of the division units. | 03-22-2012 |
20130343113 | SEMICONDUCTOR DEVICE - A semiconductor device in which noise is reduced without an increase in chip area. The device is used as an MRAM in which a memory mat is formed on a silicon substrate surface and the central area of the memory mat is used as a memory array and the area around the memory array is used as a dummy memory array. In the dummy memory array, a capacitor is formed between each bit line, each digit line and a supply voltage line, and a grounding voltage line. Therefore the peak value of a current flowing in each of the bit lines, digit lines and supply voltage line is decreased. | 12-26-2013 |
Patent application number | Description | Published |
20090039451 | METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY DEVICE - A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer. | 02-12-2009 |
20090269860 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH | 10-29-2009 |
20090302404 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device having an MTJ device excellent in operating characteristics and a manufacturing method therefor are obtained. The MTJ device is formed of a laminated structure obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower magnetic film and the upper magnetic film contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO | 12-10-2009 |
20090315128 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO | 12-24-2009 |
20100151276 | MAGNETIC STORAGE DEVICE - A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer. | 06-17-2010 |
20100180697 | TACTILE SENSOR - The present invention provides a tactile sensor which can reproduce a sensor surface in contact with a sensing object and contribute to a reduction in cost of an automation system which utilizes an industrial robot, the tactile sensor including: a contact-portion unit | 07-22-2010 |
20100264501 | METHOD FOR MANUFACTURING MAGNETIC STORAGE DEVICE AND MAGNETIC STORAGE DEVICE - Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode. | 10-21-2010 |
20110121419 | METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY DEVICE - A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer. | 05-26-2011 |
20110171755 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING MEMORY ELEMENT WITH PROTECTIVE FILM - To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NH | 07-14-2011 |
20110204458 | Semiconductor Device and Method of Manufacturing the Same - The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO | 08-25-2011 |
20120301975 | SEMICONDUCTOR DEVICE INCLUDING A MAGNETIC TUNNEL JUNCTION DEVICE INCLUDING A LAMINATED STRUCTURE AND MANUFACTURING METHOD THEREFOR - A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO | 11-29-2012 |